FDPF18N20FT

FDP18N20F / FDPF18N20FT N-Channel MOSFET September 2009 FDP18N20F / FDPF18N20FT N-Channel MOSFET 200V, 18A, 0.14Ω Features • RDS(on) = 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A • Low gate charge ( Typ. 20nC) • Low Crss ( Typ. 24pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 100 0.83 -55 to +150 300 18 10.8 72 324 18 10 4.5 41 0.33 FDP18N20F FDPF18N20FT 200 ±30 18* 10.8* 72* Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP18N20F FDPF18N20FT 1.2 0.5 62.5 3.0 62.5 oC/W Units ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. A 1 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP18N20F FDPF18N20FT Device FDP18N20F FDPF18N20FT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 200V, VGS = 0V VDS = 160V, TC = 125oC VGS = ±30V, VDS = 0V 200 0.2 10 100 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 9A VDS = 20V, ID = 9A (Note 4) 3.0 - 0.12 13.6 5.0 0.14 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 160V, ID = 18A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 885 200 24 20 5 9 1180 270 35 26 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 100V, ID = 18A RG = 25Ω (Note 4, 5) - 16 50 50 40 40 110 110 90 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 18A VGS = 0V, ISD = 18A dIF/dt = 100A/µs (Note 4) - 80 240 18 72 1.5 - A A V ns nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP18N20F / FDPF18N20FT Rev. A 2 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 50 VGS = 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 30 ID,Drain Current[A] ID,Drain Current[A] 10 10 150 C 25 C o o 1 *Notes: 1. 250µs Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250µs Pulse Test 1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 VGS,Gate-Source Voltage[V] 7 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.25 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 150 C o o 0.20 VGS = 10V 25 C 10 0.15 VGS = 20V *Note: TJ = 25 C o *Notes: 1. VGS = 0V 2. 250µs Pulse Test 0.10 0 10 20 30 ID, Drain Current [A] 40 50 1 0.0 0.4 0.8 1.2 1.6 VSD, Body Diode Forward Voltage [V] 2.0 Figure 5. Capacitance Characteristics 2000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 40V VDS = 100V VDS = 160V 8 1500 Capacitances [pF] *Note: 1. VGS = 0V 2. f = 1MHz Ciss 6 1000 4 Coss 500 Crss 2 *Note: ID = 18A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 6 12 18 Qg, Total Gate Charge [nC] 24 FDP18N20F / FDPF18N20FT Rev. A 3 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8-1. Maximum Safe Operating Area - FDP18N20F 100 20µs 100µs ID, Drain Current [A] 1.1 10 1ms 1.0 1 Operation in This Area is Limited by R DS(on) 10ms DC *Notes: 0.9 0.1 *Notes: 1. VGS = 0V 2. ID = 250µA 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -100 0.01 -50 0 50 100 o 150 TJ, Junction Temperature [ C] 200 1 10 100 VDS, Drain-Source Voltage [V] 600 Figure 8-2. Maximum Safe Operating Area - FDPF18N20FT 100 10µs 100µs Figure 9. Maximum Drain Current vs. Case Temperature 20 ID, Drain Current [A] 10 ID, Drain Current [A] 1ms 16 1 Operation in This Area is Limited by R DS(on) 10ms 12 8 *Notes: DC o o 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 4 0.01 1 10 100 VDS, Drain-Source Voltage [V] 600 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10-1. Transient Thermal Response Curve - FDP18N20F 2 1 Thermal Response [ZθJC] 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 *Notes: t2 o 0.01 Single pulse 1. ZθJC(t) = 1.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 10 -5 10 -4 10 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 0 10 1 10 2 FDP18N20F / FDPF18N20FT Rev. A 4 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Figure 10-2. Transient Thermal Response Curve - FDPF18N20FT 2 0.5 Thermal Response [ZθJC] 1 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 *Notes: 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) o 0.01 Single pulse 10 -5 10 -4 10 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 0 10 1 10 2 FDP18N20F / FDPF18N20FT Rev. A 5 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP18N20F / FDPF18N20FT Rev. A 6 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V + DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP18N20F / FDPF18N20FT Rev. A 7 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Mechanical Dimensions TO-220 FDP18N20F / FDPF18N20FT Rev. A 8 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : 4000V Dimensions in Millimeters FDP18N20F / FDPF18N20FT Rev. A 9 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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The datasheet is for reference information only. Rev. I41 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production 10 FDP18N20F / FDPF18N20FT Rev. A www.fairchildsemi.com