FDPF24N40

FDP24N40 / FDPF24N40 N-Channel MOSFET December 2007 FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A • Low gate charge ( Typ. 46nC) • Low Crss ( Typ. 25pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 227 1.8 -55 to +150 300 24 14.4 96 1296 24 22.7 4.5 40 0.3 FDP24N40 FDPF24N40 400 ±30 24* 14.4* 96* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP24N40 0.55 0.5 62.5 FDPF24N40 3.0 62.5 o Units C/W ©2007 Fairchild Semiconductor Corporation FDP24N40 / FDPF24N40 Rev. A 1 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP24N40 FDPF24N40 Device FDP24N40 FDPF24N40 Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to VDS = 400V, VGS = 0V VDS = 320V, TC = 125oC VGS = ±30V, VDS = 0V 25oC 400 0.4 1 10 ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 12A VDS = 20V, ID = 12A (Note 4) 3.0 - 0.140 34 5.0 0.175 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 320V, ID = 24A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 2270 365 25 46 12 20 3020 490 38 60 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 200V, ID = 24A R G = 25 Ω (Note 4, 5) - 40 90 110 65 90 190 230 140 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 24A VGS = 0V, ISD = 24A dIF/dt = 100A/μs (Note 4) - 360 4.7 24 96 1.4 - A A V ns μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.5mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP24N40 / FDPF24N40 Rev. A 2 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 50 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 70 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID,Drain Current[A] ID,Drain Current[A] 10 10 150 C o 25 C o o -55 C 1 *Notes: 1. 250μs Pulse Test 2. TC = 25 C o 1 0.2 0.05 0.2 0.1 1 VDS,Drain-Source Voltage[V] 8 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.19 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 200 0.18 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 100 0.16 VGS = 10V VGS = 20V 150 C 25 C o o 10 0.14 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 2. 250μs Pulse Test 0.12 0 10 20 30 ID, Drain Current [A] 40 50 1 0.2 0.6 1.0 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 100V VDS = 200V VDS = 320V 4000 Capacitances [pF] Coss 8 3000 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 2000 4 1000 Crss 2 *Note: ID = 24A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 FDP24N40 / FDPF24N40 Rev. A 3 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 *Notes: 1. VGS = 10V 2. ID = 12A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 9. Maximum Safe Operating Area - FDP24N40 200 100 100μs 10μs Figure 10. Maximum Drain Current vs. Case Temperature 25 ID, Drain Current [A] 1ms 10ms DC 20 ID, Drain Current [A] 800 10 Operation in This Area is Limited by R DS(on) 15 1 10 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 5 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDP24N40 1 Thermal Response [ZθJC] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 *Notes: 1. ZθJC(t) = 0.55 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) o 0.01 Single pulse 0.003 -5 10 10 -4 10 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 0 10 1 10 2 FDP24N40 / FDPF24N40 Rev. A 4 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP24N40 / FDPF24N40 Rev. A 5 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP24N40 / FDPF24N40 Rev. A 6 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Mechanical Dimensions TO-220 FDP24N40 / FDPF24N40 Rev. A 7 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 15.87 ±0.20 www.fairchildsemi.com FDP24N40 / FDPF24N40 Rev. A 8 FDP24N40 / FDPF24N40 N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP24N40 / FDPF24N40 Rev. A 9 www.fairchildsemi.com