FDPF26N40

FDP26N40 / FDPF26N40 N-Channel MOSFET February 2008 FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.16Ω Features • RDS(on) = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A • Low gate charge ( Typ. 48nC) • Low Crss ( Typ. 30pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 265 2.0 -55 to +150 300 26 15.6 104 1352 26 26.5 4.5 40 0.3 FDP26N40 FDPF26N40 400 ±30 26* 15.6* 104* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP26N40 0.5 0.5 62.5 FDPF26N40 3.0 62.5 o Units C/W ©2008 Fairchild Semiconductor Corporation FDP26N40 / FDPF26N40 Rev. A 1 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP26N40 FDPF26N40 Device FDP26N40 FDPF26N40 Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 400V, VGS = 0V VDS = 320V, TC = 125oC VGS = ±30V, VDS = 0V 400 0.5 1 10 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 13A VDS = 20V, ID = 13A (Note 4) 3.0 - 0.13 25.5 5.0 0.16 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 320V, ID = 26A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 2400 390 30 48 15 20 3185 520 45 60 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 200V, ID = 26A R G = 25 Ω (Note 4, 5) - 45 100 115 66 100 210 240 140 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 26A VGS = 0V, ISD = 26A dIF/dt = 100A/µs (Note 4) - 406 5.17 26 104 1.4 - A A V ns µC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 4mH, IAS = 26A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 26A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP26N40 / FDPF26N40 Rev. A 2 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 70 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 100 ID,Drain Current[A] ID,Drain Current[A] 10 10 150 C o -55 C o 1 *Notes: 1. 250µs Pulse Test 2. TC = 25 C o 25 C *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 0.1 0.02 1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 7 8 VGS,Gate-Source Voltage[V] 9 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.35 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 0.30 150 C 25 C o o 0.25 10 0.20 VGS = 10V VGS = 20V 0.15 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 2. 250µs Pulse Test 0.10 0 20 40 60 ID, Drain Current [A] 80 1 0.2 0.6 1.0 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 5000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 100V VDS = 200V VDS = 320V 4000 Capacitances [pF] 8 3000 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 2000 4 Coss 1000 2 *Note: ID = 26A Crss 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 FDP26N40 / FDPF26N40 Rev. A 3 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 *Notes: 1. VGS = 10V 2. ID = 13A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 9. Maximum Safe Operating Area - FDP26N40 300 Figure 10. Maximum Safe Operating Area 28 100 100µs 10µs 24 ID, Drain Current [A] ID, Drain Current [A] 1ms 10 10ms DC 20 16 12 8 4 0 25 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.01 1 10 100 VDS, Drain-Source Voltage [V] 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP26N40 1 Thermal Response [ZθJC] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t1 t2 0.01 *Notes: 1. ZθJC(t) = 0.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) o 0.002 10 -5 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDP26N40 / FDPF26N40 Rev. A 4 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP26N40 / FDPF26N40 Rev. A 5 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP26N40 / FDPF26N40 Rev. A 6 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDP26N40 / FDPF26N40 Rev. A 7 www.fairchildsemi.com FDP26N40 / FDPF26N40 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) 9.75 ±0.30 MAX1.47 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 15.87 ±0.20 www.fairchildsemi.com FDP26N40 / FDPF26N40 Rev. A 8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com