FDPF52N20T

FDP52N20 / FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 357 2.86 -55 to +150 300 52 33 208 2520 52 35.7 4.5 38.5 0.3 FDP52N20 FDPF52N20T 200 ±30 52* 33* 208* Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP52N20 0.35 0.5 62.5 FDPF52N20T 3.3 62.5 oC/W Units ©2007 Fairchild Semiconductor Corporation FDP52N20 / FDPF52N20T Rev. A 1 www.fairchildsemi.com FDP52N20 / FDPF52N20T N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP52N20 FDPF52N20T Device FDP52N20 FDPF52N20T Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 200V, VGS = 0V VDS = 160V, TC = 125oC VGS = ±30V, VDS = 0V 200 0.2 1 10 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 26A VDS = 40V, ID = 26A (Note 4) 3.0 - 0.041 35 5.0 0.049 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 160V, ID = 52A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 2230 540 66 49 19 24 2900 700 100 63 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 100V, ID = 20A RG = 25Ω (Note 4, 5) - 53 175 48 29 115 359 107 68 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 52A VGS = 0V, ISD = 52A dIF/dt = 100A/µs (Note 4) - 162 1.3 52 204 1.5 - A A V ns µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.4mH, IAS = 52A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 52A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP52N20 / FDPF52N20T Rev. A 2 www.fairchildsemi.com FDP52N20 / FDPF52N20T N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics ID, Drain Current [A] 10 1 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 150°C 10 1 25°C -55°C * Notes : 1. VDS = 40V 2. 250µs Pulse Test 10 0 * Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 -1 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance 0.08 VGS = 10V 0.06 IDR, Reverse Drain Current [A] 0.10 10 2 10 1 150℃ 25℃ 0.04 VGS = 20V 0.02 * Note : TJ = 25°C * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.00 0 25 50 75 100 125 150 10 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 5000 VGS, Gate-Source Voltage [V] 10 VDS = 40V VDS = 100V VDS = 160V Capacitances [pF] 4000 Coss Ciss 8 3000 6 2000 * Note ; 1. VGS = 0 V 4 1000 Crss 2. f = 1 MHz 2 * Note : ID = 52A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDP52N20 / FDPF52N20T Rev. A 3 www.fairchildsemi.com FDP52N20 / FDPF52N20T N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 26 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Tem perature [°C ] TJ, Junction Tem perature [°C] Figure 9-1. Maximum Safe Operating Area - FDP52N20 10 3 Figure 9-2. Maximum Safe Operating Area - FDPF52N20T 10 3 10 µs 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 10 2 10 µs 100 µs 1 ms 10 1 10 ms Operation in This Area is Limited by R DS(on) 100 ms DC 10 0 10 0 10 -1 * Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 10 -1 * Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0 10 -2 10 0 10 1 10 2 10 -2 10 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current 60 50 ID, Drain Current [A] 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature [°C] FDP52N20 / FDPF52N20T Rev. A 4 www.fairchildsemi.com FDP52N20 / FDPF52N20T N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP52N20 ZθJC(t), Thermal Response D =0.5 10 -1 0.2 0.1 0.05 0.02 10 -2 PDM t1 * N o tes : t2 0 0.01 single pulse 1 . Z θ JC (t) = 0.3 5 C /W M ax. 2 . D uty F actor, D =t 1 /t 2 3 . T JM - T C = P D M * Z θ JC (t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u are W a ve P u lse D uration [se c] Figure 11-2. Transient Thermal Response Curve - FDPF52N20T D=0.5 ZθJC(t), Thermal Response 10 0 0.2 0.1 0.05 10 -1 PDM t1 t2 0 0.02 0.01 * N otes : 1. Z θ JC (t) = 3.3 C /W M ax. 2. D uty Factor, D =t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t) single pulse 10 -2 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 t 1 , Square W ave Pulse Duration [sec] FDP52N20 / FDPF52N20T Rev. A 5 www.fairchildsemi.com FDP52N20 / FDPF52N20T N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP52N20 / FDPF52N20T Rev. A 6 www.fairchildsemi.com FDP52N20 / FDPF52N20T N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a te P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p FDP52N20 / FDPF52N20T Rev. A 7 www.fairchildsemi.com FDP52N20 / FDPF52N20T N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDP52N20 / FDPF52N20T Rev. A 8 www.fairchildsemi.com FDP52N20 / FDPF52N20T N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 15.87 ±0.20 www.fairchildsemi.com FDP52N20 / FDPF52N20T Rev. A 9 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com