FDPF5N50UT

FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET November2009 FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features • RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D GDS TO-220 FDP Series GD S TO-220F FDPF Series (potted) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 85 0.67 -55 to +150 300 4 2.4 16 216 4 8.5 4.5 28 0.22 FDP5N50U FDPF5N50UT 500 ±30 4* 2.4* 16* Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP5N50U 1.4 0.5 62.5 FDPF5N50UT 4.5 62.5 oC/W Units ©2009 Fairchild Semiconductor Corporation FDP5N50U / FDPF5N50UT Rev. A-1 1 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP5N50U FDPF5N50UT Device FDP5N50U FDPF5N50UT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25 C o 500 - 0.7 - 25 250 ±100 V V/oC A nA VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 2A VDS = 40V, ID = 2A (Note 4) 3 - - 1.65 4.8 5 2 - V  S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 4A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 485 65 5 11 3 5 650 90 8 15 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 4A R G = 25  (Note 4, 5) - 14 21 27 20 38 52 64 50 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 4A VGS = 0V, ISD = 4A dIF/dt = 100A/s (Note 4) - 36 33 4 16 1.6 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 27mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25°C 3: ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50U / FDPF5N50UT Rev. A-1 2 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 10 ID,Drain Current[A] 1 ID,Drain Current[A] 150 C 25 C o o 1 0.1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250s Pulse Test 0.02 0.1 0.1 30 1 10 VDS,Drain-Source Voltage[V] 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 30 RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 150 C o 2.2 VGS = 10V VGS = 20V 10 25 C o 1.8 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 1.4 0 6 12 ID, Drain Current [A] 18 1 0.4 2. 250s Pulse Test 1.0 1.6 VSD, Body Diode Forward Voltage [V] 2.2 Figure 5. Capacitance Characteristics 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 100V VDS = 250V VDS = 400V 800 Capacitances [pF] 8 600 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 400 Coss 4 200 Crss 2 *Note: ID = 4A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 4 8 Qg, Total Gate Charge [nC] 12 FDP5N50U / FDPF5N50UT Rev. A-1 3 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. Maximum Safe Operating Area - FDP5N50U 30 50s 10 1.1 ID, Drain Current [A] 100s 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Safe Operating Area - FDPF5N50UT 30 30s 100s Figure 10. Maximum Drain Current vs. Case Temperature 5 10 ID, Drain Current [A] 4 10ms ID, Drain Current [A] 1ms 1 DC 3 Operation in This Area is Limited by R DS(on) 2 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 1 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP5N50U 3 Thermal Response [ZJC] 1 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 Single pulse t1 t2 *Notes: 1. ZJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) o 0.01 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDP5N50U / FDPF5N50UT Rev. A-1 4 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF5N50UT 10 Thermal Response [ZJC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 *Notes: 0.01 Single pulse 1. ZJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 o 0.003 -5 10 10 10 -3 10 10 10 10 Rectangular Pulse Duration [sec] -2 -1 0 1 10 2 10 3 FDP5N50U / FDPF5N50UT Rev. A-1 5 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N50U / FDPF5N50UT Rev. A-1 6 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V + DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p FDP5N50U / FDPF5N50UT Rev. A-1 7 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Mechanical Dimensions TO-220 FDP5N50U / FDPF5N50UT Rev. A-1 8 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Package Dimensions (Continued) TO-220F * Front/Back Side Isolation Voltage : 2500V Dimensions in Millimeters FDP5N50U / FDPF5N50UT Rev. A-1 9 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS™ AccuPower™ PowerTrench® The Power Franchise® PowerXS™ F-PFS™ Auto-SPM™ ® FRFET® Programmable Active Droop™ Build it Now™ SM ® QFET CorePLUS™ Global Power Resource TinyBoost™ CorePOWER™ Green FPS™ QS™ TinyBuck™ CROSSVOLT™ Green FPS™ e-Series™ Quiet Series™ TinyCalc™ CTL™ Gmax™ RapidConfigure™ TinyLogic® Current Transfer Logic™ GTO™ ® TINYOPTO™ EcoSPARK IntelliMAX™ ™ TinyPower™ EfficentMax™ Saving our world, 1mW /W /kW at a time™ ISOPLANAR™ TinyPWM™ EZSWITCH™* SmartMax™ MegaBuck™ TinyWire™ ™* SMART START™ MICROCOUPLER™ TriFault Detect™ SPM® MicroFET™ TRUECURRENT™* STEALTH™ MicroPak™ ® SuperFET™ MillerDrive™ Fairchild® SuperSOT™-3 MotionMax™ Fairchild Semiconductor® SuperSOT™-6 UHC® Motion-SPM™ ® FACT Quiet Series™ Ultra FRFET™ SuperSOT™-8 OPTOLOGIC FACT® UniFET™ OPTOPLANAR® SupreMOS™ ® FAST® VCX™ SyncFET™ FastvCore™ VisualMax™ Sync-Lock™ FETBench™ XS™ ®* PDP SPM™ FlashWriter® * Power-SPM™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I41 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDP5N50U / FDPF5N50UT Rev. A-1 10 www.fairchildsemi.com