FDQ7238AS_08

FDQ7238AS May 2008 FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package General Description The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using TM Fairchild’s SyncFET technology. The FDQ7238AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Features • Q2: 14 A, 30V. RDS(on) = 8.7 mΩ @ VGS = 10V RDS(on) = 10.5 mΩ @ VGS = 4.5V • Q1: 11 A, 30V. RDS(on) = 13.2 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.5V S2 S2 S2 SO-14 pin 1 G1 Vin G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 ±20 11 50 1.8 1.1 −55 to +150 Units V V A W °C Power Dissipation for Single Operation (Note 1a & 1b) (Note 1c & 1d) ±20 14 50 2.4 1.3 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) (Note 1c & 1d) 52 94 68 118 °C/W Package Marking and Ordering Information Device Marking FDQ7238AS Device FDQ7238AS Reel Size 13” Tape width 16mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDQ7238AS Rev A1(X) FDQ7238AS Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 µA ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125°C VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 250 µA VDS = VGS, ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 14A, TJ = 125°C VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 11, TJ = 125°C VGS = 10 V, VDS = 5 V VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 14 A ID = 11 A VDS = 10 V, Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 ALL Q2 Q1 Q2 Q1 Q2 30 30 25 24 Max Units V mV/°C 500 1 µA mA µA nA V mV/°C 8.7 10.5 12.5 13.2 16 19 mΩ Off Characteristics 5.6 40 ±100 1 1 1.8 1.7 −3 −4 7.2 8.7 10 11 13 15 3 3 IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate-Body Leakage (Note 2) On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 ID(on) gFS On–State Drain Current Forward Transconductance Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 58 43 1530 920 440 190 160 120 1.9 1.9 A S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz VDS = 15 V, f = 1.0 MHz VGS = 0 V, pF pF pF Ω FDQ7238AS Rev A1 (X) FDQ7238AS Electrical Characteristics Symbol td(on) tr td(off) tf td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd TA = 25°C unless otherwise noted Parameter (Note 2) Test Conditions Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 12 9 13 5 30 27 19 4 17 11 18 15 28 16 13 9 28 17 15 9 4.1 2.7 4.9 3.3 Max Units 21 18 23 10 49 43 35 8 30 20 32 26 44 29 23 18 39 24 21 19 ns ns ns ns ns ns ns ns nC nC nC nC Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 15 V, VGS = 10V, ID = 1 A, RGEN = 6 Ω VDD = 15 V, VGS = 4.5V, ID = 1 A, RGEN = 6 Ω Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate-Source Charge Gate-Drain Charge Q2 VDS = 15 V, ID = 14A Q1 VDS = 15 V, ID = 11A Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.4 A VGS = 0 V, IS = 1.9 A IS = 2.1 A VGS = 0 V, IF = 14A dIF/dt = 300 A/µs IF = 11A dIF/dt = 100 A/µs (Note 2) (Note 2) (Note 2) trr Qrr trr Qrr NOTE : 1. 0.5 0.4 0.7 22 15 16 5 3.4 2.1 0.7 1.2 A V ns nC ns nC RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 68°C/W when mounted on a 1in2 pad of 2 oz copper (Q1). c) 118°C/W when mounted on a minimum pad of 2 oz copper (Q1). b) 52°C/W when mounted on a 1in2 pad of 2 oz copper (Q2). d) 94°C/W when mounted on a minimum pad of 2 oz copper (Q2). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3 4 FDQ7238AS Rev A1(X) FDQ7238AS Typical Characteristics: Q2 50 VGS = 10V 40 6.0V 3.5V 4.0V 4.5V 30 3.0V 20 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.0V 2.2 ID, DRAIN CURRENT (A) 1.8 3.5V 1.4 4.0V 4.5V 6.0V 10.0V 10 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 1 0.6 0 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.024 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 14A VGS =10V 1.4 ID = 7A RDS(ON), ON-RESISTANCE (OHM) 0.02 1.2 0.016 TA = 125oC 0.012 1 TA = 25oC 0.008 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.004 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V VGS = 0V 40 ID, DRAIN CURRENT (A) 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC 30 20 TA = 125oC -55 C o -55 C o 10 25 C o 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7238AS Rev A1 (X) FDQ7238AS Typical Characteristics : Q2 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A 2500 f = 1MHz VGS = 0 V 8 20V 2000 CAPACITANCE (pF) VDS = 10V Ciss 6 15V 1500 4 1000 Coss 2 500 Crss 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 100µs RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 40 10 SINGLE PULSE RθJA = 94°C/W TA = 25°C 30 1 20 0.1 VGS = 10V SINGLE PULSE RθJA = 94oC/W T A = 25 C o 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 94°C/W 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1d. Transient thermal response will change depending on the circuit board design FDQ7238AS Rev A1 (X) FDQ7238AS Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7238AS Q2. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power dissipated in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TA = 125oC CURRENT: 0.8A/div 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12nS/div Figure 12. FDQ7238AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6670A). CURRENT: 0.4A/div TIME : 12nS/div Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic. FDQ7238AS Rev A 1(X) FDQ7238AS Typical Characteristics: Q1 50 VGS = 10V 40 6.0V 4.0V 4.5V 3.5V 30 2.6 VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 ID, DRAIN CURRENT (A) 1.8 3.5V 20 3.0V 10 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 1.4 4.0V 4.5V 6.0V 1 10.0V 0.6 0 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 15. On-Region Characteristics. Figure 16. On-Resistance Variation with Drain Current and Gate Voltage. 0.036 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 1.4 1.3 1.2 1.1 1 0.9 0.8 -50 ID = 11A VGS = 10V ID = 5.5A 0.032 0.028 0.024 0.02 0.016 TA = 125 C o TA = 25oC 0.012 0.008 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 17. On-Resistance Variation with Temperature. 50 Figure 18. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V VGS = 0V 40 ID, DRAIN CURRENT (A) 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25oC -55 C o o 30 20 TA = 125 C o -55 C o 10 25oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 19. Transfer Characteristics. Figure 20. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7238AS Rev A1 (X) FDQ7238AS Typical Characteristics: Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 11A 1500 f = 1MHz VGS = 0 V 8 20V 1200 CAPACITANCE (pF) VDS = 10V Ciss 6 15V 900 4 600 Coss 2 300 Crss 0 0 4 8 12 Qg, GATE CHARGE (nC) 16 20 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 21. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 100µs RDS(ON) LIMIT Figure 22. Capacitance Characteristics. 50 SINGLE PULSE RθJA = 118°C/W TA = 25°C ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC 40 30 1 20 0.1 VGS = 10V SINGLE PULSE RθJA = 118oC/W T A = 25 C o 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 23. Maximum Safe Operating Area. Figure 24. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 118 °C/W 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design. FDQ7238AS Rev A1 (X) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDQ7238AS Rev.A1(X)