FDR6580_01

FDR6580 July 2001 FDR6580 N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 11.2 A, 20 V. RDS(ON) = 9 mΩ @ VGS = 4.5 V RDS(ON) = 11 mΩ @ VGS = 2.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a smaller footprint than SO8 Applications • Synchronous rectifier • DC/DC converter S D S D 5 6 G 7 8 4 3 2 1 SuperSOT -8 TM D D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ±12 (Note 1a) Units V V A W 11.2 50 1.8 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W Package Marking and Ordering Information Device Marking FDR6580 Device FDR6580 Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2001 Fairchild Semiconductor Corporation FDR6580 Rev C(W) FDR6580 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µ A Min 20 Typ Max Units V Off Characteristics ID = 250 µ A, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = –12 V , VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µ A 11 1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, 0.5 0.9 -3.5 5.2 6.6 7.1 1.5 V mV/°C ID = 250 µ A, Referenced to 25°C VGS = 4.5 V, ID = 11.2 A VGS = 2.5 V, ID = 10.1 A VGS = 4.5 V, ID = 11.2 A, TJ 125°C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 11.2 A 9 11 13 mΩ A 25 70 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 3829 854 446 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 15 20 62 39 27 32 99 62 48 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5V ID = 11.2 A, 34 5.9 9.3 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.5 A Voltage 1.5 (Note 2) A V 0.6 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 70°/W when 2 mounted on a 1in pad of 2 oz copper b) 125°/W when 2 mounted on a .04 in pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDR6580 Rev C(W) FDR6580 Typical Characteristics 100 VGS = 4.5V 3.0 ID, DRAIN CURRENT (A) 80 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V 1.8 VGS = 2.0V 1.6 1.4 2.5V 1.2 1 0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A) 3.0V 3.5V 4.5V 2.0V 60 40 20 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 11.2A VGS = 4.5V 1.4 ID = 5.6A 0.014 0.012 1.2 TA = 125 C 0.01 0.008 o 1 0.8 TA = 25oC 0.006 0.004 0.6 -50 -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 80 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID , DRAIN CURRENT (A) 60 TA = -55oC o 25 C 125 C o VGS = 0V 10 1 0.1 -55 C 0.01 0.001 0.0001 o o TA = 125 C 25oC 40 20 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR6580 Rev C(W) FDR6580 Typical Characteristics 5 VGS , GATE-SOURCE VOLTAGE (V) 6000 ID = 11.2A VDS = 5V 10V CAPACITANCE (pF) 15V 5000 CISS 4000 3000 2000 1000 f = 1 MHz VGS = 0 V 4 3 2 COSS 1 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 CRSS 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100µ s RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s 1 VGS = 4.5V SINGLE PULSE o RθJA = 135 C/W TA = 25 C 0.01 0.01 o Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 DC 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 RθJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 / t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDR6580 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3