FDR836P

FDR836P April 1999 FDR836P P-Channel 2.5V Specified MOSFET General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed. Features • -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V • • High density cell design for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. D S D S 5 6 G 4 3 2 1 7 8 SuperSOT -8 TM D D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -20 (Note 1a) Units V V A W ±8 -6.1 -18 1.8 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W Package Outlines and Ordering Information Device Marking Device FDR836P Reel Size 13’’ Tape Width 12mm Quantity 3000 units .836P ã 1999 Fairchild Semiconductor Corporation FDR836P, Rev. C FDR836P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions VGS = 0 V, ID = -250 µA ID= -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) -20 -24 -1 100 -100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -6.1 A VGS = -4.5V, ID =-6.1 A,TJ=125°C VGS = -2.5 V, ID = -5 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -6.1A -0.4 -0.6 3 0.022 0.031 0.029 -1 V mV/°C 0.030 0.048 0.040 Ω ID(on) gFS -9 22 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -25 V, VGS = 0 V, f = 1.0 MHz 2200 570 140 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 10 14 225 85 18 25 360 135 44 ns ns ns ns nC nC nC VDS = -10 V, ID = -6.1 A, VGS = - 4.5 V 32 3.2 8.1 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.5 A (Note 2) -1.5 -0.65 -1.2 A V Notes: 1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain Pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 70° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 125° C/W when mounted on a 0.026 in2 pad of 2oz. copper. c) 135° C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% FDR836P, Rev. C FDR836P Typical Characteristics 20 -ID, DRAIN-SOURCE CURRENT (A) 2 -2.5V 16 -3.0V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V 1.8 1.6 1.4 -2.5V 1.2 1 0.8 -3.0V -3.5V -4.0V -4.5V 12 -1.5V 8 VGS = -2.0V 4 0 0 0.5 1 1.5 2 2.5 3 0 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -6.1A VGS = -4.5V RDS(ON), ON-RESISTANCE (OHM) ID = -3 A 0.08 1.4 1.2 0.06 1 0.04 TA = 125 C o 0.8 0.02 TA = 25 C o 0.6 -50 -25 0 25 50 75 100 o 0 125 150 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 20 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 16 TA = -55 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 25 C 125 C o o VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125 C o o 12 25 C 8 -55 C o 4 0 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR836P, Rev. C FDR836P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -6.1A 4 (continued) 4000 VDS = -5V -10V -15V f = 1 MHz VGS = 0 V CAPACITANCE (pF) 3000 CISS 2000 3 2 1 1000 COSS 0 CRSS 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 35 40 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RθJA=135 C/W TA=25 C POWER (W) 30 o o -ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100µs 1ms 10ms 100ms 40 1 VGS= -4.5V SINGLE PULSE RθJA = 135 C/W TA = 25 C 0.01 0.1 1 o o 1s 10s DC 20 0.1 10 0 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.0001 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse R θJA (t) = r(t) * R θJA R θJA = 135°C/W P(pk) t1 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1/ t 2 0.01 0.1 t 1, TIME (sec) 1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDR836P, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. F63TNR Label Anti static Cover Tape Static Dissi pat ive Emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no f l ow c ode ) D84Z TNR 500 7" Dia 184x187x47 1,000 0.0416 0.0980 TNR 3,000 13" D ia 343x64x343 6,000 0.0416 0.5615 SSOT-8 Unit Orientation 343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons F63TNR Label F63TNR Label F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label LOT: CBVK741B019 FSID: FDR835N QTY: 3000 SPEC: SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets August 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-8 (12mm) A0 4.47 +/-0.10 B0 5.00 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.50 +/-0.10 E1 1.75 +/-0.10 E2 10.25 mi n F 5.50 +/-0.05 P1 8.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.280 +/-0.150 Wc 9.5 +/-0.025 Tc 0.06 +/-0.02 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Si de or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-8 Reel Configuration: Figur e 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 12mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 5.906 150 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 – 0.606 11.9 – 15.4 0.469 – 0.606 11.9 – 15.4 12mm 13" Dia © 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOT™-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D