FDS3570_00

FDS3570 December 2000 FDS3570 80V N-Channel PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • • • • 9 A, 80 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 8 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 80 ±20 (Note 1a) Units V V A W 9 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS3570 Device FDS3570 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 2000 Fairchild Semiconductor International FDS3570 Rev. C FDS3570 Electrical Characteristics Symbol WDSS IAR TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 360 9 mJ A Drain-Source Avalanche Ratings (Note 2) Single Pulse Drain-Source VDD = 40 V, ID = 9 A Avalanche Energy Maximum Drain-Source Avalanche Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 64 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 9 A VGS = 10 V, ID = 9 A, TJ = 125°C VGS = 6 V, ID = 8.4 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 7.6 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage,Forward Gate-Body Leakage,Reverse (Note 2) 80 77 1 100 -100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance 2 2.4 -7 0.015 0.027 0.016 4 V mV/°C 0.020 0.038 0.023 Ω ID(on) gFS 25 40 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2750 280 140 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 20 12 60 24 32 24 95 38 76 ns ns ns ns nC nC nC VDS = 40 V, ID = 9 A, VGS = 10 V 54 9.6 14 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 2.1 0.72 1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDS3570 Rev. C FDS3570 Typical Characteristics 50 5.0V 4.5V 6 0V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 40 1.8 1.6 1.4 1.2 1 0.8 30 4.0V 20 VGS = 4.0V 4.5V 5.0V 6.0V 7.0V 10V 10 3.5V 0 0 1 2 3 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o ID = 9A VGS = 10V ID = 4.5A 0.05 0.04 0.03 0.02 0.01 0 0 2 4 6 8 10 TA = 125 C o TA = 25 C o 125 150 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 60 50 ID, DRAIN CURRENT (A) 40 30 20 125 C 10 0 2 3 4 5 6 25 o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 TA = 125 C 1 25 C 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -55 C o o o VDS = 5V TA = -55 C o VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3570 Rev. C 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 9A 8 CAPACITANCE (pF) VDS = 10V 20V 40V 4000 3500 3000 2500 2000 1500 1000 500 COSS CRSS 0 10 20 30 40 50 60 CISS f = 1MHz VGS = 0 V 6 4 2 0 0 10 20 30 40 50 60 0 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) 100 RDS(ON) LIMIT 100µs ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE RθJA = 125 C/W TA = 25 C 0.01 0.1 1 10 100 o o 50 SINGLE PULSE 40 POWER (W) RθJA = 125 C/W TA = 25 C 30 o o 1s 10s DC 20 0.1 10 ID = 9A VDS = 10V 0 VDS, DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) TR ANSI ENT T ER MAL RESISTANC E H 1 0.5 0.2 0.1 0 .05 0 .02 0 .01 0. 05 0 0. 02 0 0. 01 0 0.0 001 0. 01 0 0 .01 0.1 t 1, TI M E (s e c ) 1 10 100 300 D= 0 .5 0 .2 0 .1 0. 5 0 0. 2 0 0 .01 S i n g le P ul s e r(t), NORM ALIZED EFFECTIVE R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W P(p k ) t1 t2 TJ - TA = P * RθJA ( ) t D u t y C y c l e , D = t 1 /t2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G