FDS3580

F DS3580 December 2000 FDS3580 80V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 7.6 A, 80 V. RDS(ON) = 0.029 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V. • • • • Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 80 (Note 1a) Units V V A W ±20 7.6 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Outlines and Ordering Information Device Marking FDS3580 Device FDS3580 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 2000 Fairchild Semiconductor International FDS3580 Rev. C F DS3580 Electrical Characteristics Symbol WDSS IAR TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 245 7.6 mJ A Drain-Source Avalanche Ratings (Note 2) Single Pulse Drain-Source VDD = 40 V, ID = 7.6 A Avalanche Energy Maximum Drain-Source Avalanche Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 64 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 7.6 A VGS = 10 V, ID = 7.6 A, TJ=125°C VGS = 6 V, ID = 7 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 7.6 A Off Characteristics BVDSS ∆BVDSS ∆ TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) 80 81 1 100 -100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆ TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance 2 2.5 -7 0.022 0.037 0.024 4 V mV/°C Ω 0.029 0.055 0.033 ID(on) gFS 30 28 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 25 V, VGS = 0 V, f = 1.0 MHz 1800 180 90 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 13 8 34 16 26 20 60 30 46 ns ns ns ns nC nC nC VDS = 40 V, ID = 7.6 A, VGS = 10 V 34 6.1 6.9 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 2.1 0.74 1.2 A V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDS3580 Rev. C F DS3580 Typical Characteristics 60 50 ID, DRAIN CURRENT (A) 40 30 20 10 3.5V 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) 4.0V 6.0V 5.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 2 1.8 VGS = 4.0V 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 4.5V 5.0V 6.0V 7.0V 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 7.6A VGS = 10V ID = 3.8A 0.05 TA = 125oC 0.04 0.03 0.02 0.01 0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC Figure 3. On-Resistance Variation with Temperature. 60 25oC 125 C 40 30 20 10 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) TA = -55oC VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3580 Rev. C F DS3580 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.6A 8 (continued) 2400 VDS = 10V 20V 40V 2000 CAPACITANCE (pF) CISS 1600 1200 800 400 0 COSS CRSS f = 1MHz VGS = 0 V 6 4 2 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) 0 10 20 30 40 50 60 70 80 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 50 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100µs 1ms 10ms 100ms 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1s 10s Figure 8. Capacitance Characteristics. 100 40 POWER (W) SINGLE PULSE RθJA =125°C/W TA = 25°C 30 20 0.1 10 0 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TR ANSI ENT T ER M H AL RESISTANC E 1 0.5 0.2 0.1 0 .05 0 .02 0 .01 0. 05 0 0. 02 0 0. 01 0 0.0 001 0. 01 0 0 .01 0.1 t 1, TI M E (s e c ) 1 10 100 300 D= 0 .5 0 .2 0 .1 005 . 002 . 0 .01 S i n g le P ul s e r(t), NORM AL IZED EFFECTIVE R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W P(pk ) t1 t2 TJ - TA = P * RθJ ( ) At D u t y C y c l e , D = t 1 /t2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS3580 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G