FDS4141_F085

FDS4141_F085 P-Channel PowerTrench® MOSFET May 2009 FDS4141_F085 ® P-Channel PowerTrench MOSFET -40V, -10.8A, 19.0mΩ Features Typ rDS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A Typ rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A Typ Qg(TOT) = 35nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 Applications Control switch in synchronous & non-synchronous buck Load switch Inverter D D D D D D SO-8 S Pin 1 S G S D 8 1 S 6 7 3 2 S S D 5 4 G ©2009 Fairchild Semiconductor Corporation FDS4141_F085 Rev. A 1 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Parameter Ratings -40 ±20 -10.8 -36 229 1.6 -55 to +150 Units V V A mJ W oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area 30 81 o C/W oC/W Package Marking and Ordering Information Device Marking FDS4141 Device FDS4141_F085 Package SO-8 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V VDS = -32V, VGS = ±20V, -40 -1 ±100 V µA nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ID = -10.5A, VGS = -10V rDS(on) Drain to Source On Resistance ID = -8.4A, VGS = -4.5V ID = -10.5A, VGS = -10V, TJ = 125oC ID = -10.5A, VDD = -5V -1.0 -1.7 10.5 14.8 15.3 34 -3.0 13.0 19.0 19.0 S mΩ V gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Qg(TOT) Qg(-5) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at -10V Total Gate Charge at -5V Gate to Source Gate Charge Gate to Drain “Miller“ Charge VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to -10V VGS = 0 to -5V VDD = -20V ID = -10.5A 2005 355 190 5.0 35 18.6 5.2 6.6 45 24.2 pF pF pF Ω nC nC nC nC FDS4141_F085 Rev. A 2 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = -20V, ID = -10.5A VGS = -10V, RGEN = 6Ω 9.7 4.4 41 11.6 25 84 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Notes: 1: Starting TJ = 25oC, L = 6.2mH, IAS = -8.6A Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = -10.5A ISD = -2.1A IF = -10.5A, dSD/dt = 100A/µs - -0.8 -0.7 26 13.4 -1.3 -1.2 34 17.4 V ns nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDS4141_F085 Rev. A 3 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics POWER DISSIPATION MULTIPLIER 1.2 -ID, DRAIN CURRENT (A) 9 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 150 VGS = -10V 6 VGS = -4.5V 3 RθJA = 81 C/W o 0 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 150 Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE - DESCENDING ORDER Figure 2. Maximum Continuous Drain Current vs Ambient Temperature 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 81 C/W 0.001 -3 10 10 -2 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = -10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 1 10 t, RECTANGULAR PULSE DURATION (s) -1 10 2 10 3 -IDM, PEAK CURRENT (A) 100 I = I25 150 - TA 125 10 SINGLE PULSE o RθJA = 81 C/W 1 -3 10 10 -2 10 1 10 t, RECTANGULAR PULSE DURATION(s) -1 10 2 10 3 Figure 4. Peak Current Capability FDS4141_F085 Rev. A 4 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics 100 -ID, DRAIN CURRENT (A) 60 -IAS, AVALANCHE CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 1ms 10 1 STARTING TJ = 25oC 10ms 100ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED o TA = 25 C 1s DC STARTING TJ = 150oC 0.01 0.01 0.1 1 10 100 300 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 36 -ID, DRAIN CURRENT (A) 36 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = -5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = -10V VGS = -4.5V VGS = -4V VGS = -3.5V VGS = -3V -ID, DRAIN CURRENT (A) 27 27 18 TJ = 150oC 18 9 TJ = 25oC TJ = -55oC 9 0 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) 4 0 0 1 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = -10.5A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = -10.5A VGS = -10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 40 30 TJ = 150oC 20 10 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDS4141_F085 Rev. A 5 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 NORMALIZED GATE THRESHOLD VOLTAGE 1.10 VGS = VDS ID = -250µA ID = -1mA 1.2 1.0 0.8 0.6 0.4 -75 1.05 1.00 0.95 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 4000 CAPACITANCE (pF) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature -VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = -10.5A Ciss 8 VDD = -20V 6 VDD = -15V 4 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 35 40 VDD = -25V 1000 Coss f = 1MHz VGS = 0V Crss 100 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 60 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDS4141_F085 Rev. A 6 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ PowerTrench® The Power Franchise® Build it Now™ PowerXS™ FRFET® ® Global Power ResourceSM CorePLUS™ Programmable Active Droop™ ® Green FPS™ CorePOWER™ QFET TinyBoost™ QS™ CROSSVOLT™ Green FPS™ e-Series™ TinyBuck™ Quiet Series™ CTL™ Gmax™ TinyLogic® RapidConfigure™ Current Transfer Logic™ GTO™ TINYOPTO™ EcoSPARK® IntelliMAX™ TinyPower™ EfficentMax™ ISOPLANAR™ ™ TinyPWM™ Saving our world, 1mW /W /kW at a time™ EZSWITCH™ * MegaBuck™ TinyWire™ ™* SmartMax™ MICROCOUPLER™ TriFault Detect™ SMART START™ MicroFET™ TRUECURRENT™* SPM® MicroPak™ ® µSerDes™ STEALTH™ MillerDrive™ Fairchild® SuperFET™ MotionMax™ Fairchild Semiconductor® SuperSOT™-3 Motion-SPM™ FACT Quiet Series™ UHC® SuperSOT™-6 OPTOLOGIC® ® ® FACT OPTOPLANAR Ultra FRFET™ SuperSOT™-8 ® FAST® UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ PDP SPM™ ® FlashWriter * XS™ ®* Power-SPM™ FPS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDS4141_F085 Rev. A 7 www.fairchildsemi.com