FDS4435A

F DS4435A October 2001 FDS4435A P-Channel Logic Level PowerTrench® MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features • • • • -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V RDS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -30 ± 20 (Note 1a) Units V V A W -9 -50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4435A Device FDS4435A Reel Size 13’’ Tape Width 12mm Quantity 2500 units ã2001 Fairchild Semiconductor Corporation FDS4435A Rev. D F DS4435A Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA,Referenced to 25°C VDS = -24 V, VGS = 0 TJ = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Min -30 Typ Max Units V -26 -1 -10 100 -100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 µA ID = -250 µA,Referenced to 25°C VGS = -10 V, ID = -9 A TJ = 125°C VGS = -4.5 V, ID = -7 A -1 -1.7 4.2 0.015 0.021 0.023 -2 V mV/°C 0.017 0.030 0.025 Ω ID(on) gFS On-State Drain Current Forward Transconductance VGS = -10 V, VDS = -5 V VDS = -10 V, ID = -9 A -40 25 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, VGS = 0 V f = 1.0 MHz 2010 590 260 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, ID = -1 A VGS = -10 V, RGEN = 6 Ω 12 15 100 55 22 27 140 80 30 ns ns ns ns nC nC nC VDS = -15 V, ID = -9 A VGS = -5 V, 21 6 8 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Source-Drain Reverse Recovery Time VGS = 0 V, IS = -2.1 A (Note 2) -2.1 0.75 36 -1.2 80 A V ns IF = -10 A, dlF/dt = 100 A/µS Notes: 1: RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% FDS4435A Rev. D F DS4435A Typical Characteristics  - I D, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE  VGS= -10V -6.0V -4.5V -4.0V -3.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 -ID, DRAIN CURRENT (A) VGS = -3.5V -4.0V -4.5V -5.0V -6.0V -7.0V -8.0V -10V   -3.0V  -2.5V           -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.07 1.6 RDS(ON), ON RESISTANCE (OHM) NORMALIZED ON-RESISTANCE VGS = -10V ID = -9A ID = -4.5A 0.06 0.05 0.04 0.03 0.02 0.01 0 1.4 1.2 1 TJ = 125 C O 0.8 TJ = 25 C O 0.6 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (OC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 VDS = -5V -ID, DRAIN CURRENT (A) 30 TJ = -55 C O 25 C 125 C O -IS, REVERSE DRAIN CURRENT (A) O VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 TA = 125oC 25oC 20 10 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDS4435A Rev. D F DS4435A Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -8.8A 8 (continued) 2500 VDS = -5V -10V -15V CAPACITANCE (pF) 2000 CISS f = 1 MHz VGS = 0 V 6 1500 4 1000 2 500 COSS CRSS 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics 50 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 100µs 1ms 10ms 100ms 1 DC VGS = -10V SINGLE PULSE o RθJA = 125 C/W TA = 25 C 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) o Figure 8. Capacitance Characteristics 100 40 POWER (W) SINGLE PULSE RθJA =125°C/W TA = 25°C 30 1s 10s 20 0.1 10 0 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation TR ANSI ENT T ER M H AL RESISTANC E 1 0.5 0.2 0.1 0 .05 0 .02 0 .01 0. 05 0 0. 02 0 0. 01 0 0.0 001 0. 01 0 0 .01 0.1 t 1, TI M E (s e c ) 1 10 100 300 D= 0 .5 0 .2 0 .1 005 . 002 . 0 .01 S i n g le P ul s e r(t), NORM AL IZED EFFECTIVE R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W P(pk ) t1 t2 TJ - TA = P * RθJ ( t A) D u t y C y c l e , D = t 1 /t2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS4435A Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4