FDS4470

FDS4470 December 2006 FDS4470 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V • Low gate charge (45 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter D D SO-8 D D DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G SG S S SS S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 40 +30/–20 (Note 1a) Units V V A W 12.5 50 2.5 1.4 1.2 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS4470 Device FDS4470 Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDS4470 Rev D1 (W) FDS4470 Electrical Characteristics Symbol EAS IAS TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD=40V, ID=12.5A Min Typ Max Units 370 12.5 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) ID = 250 μA VGS = 0 V, ID = 250 μA, Referenced to 25°C VDS = 32 V, VGS = 30 V, VGS = 0 V VDS = 0 V 40 42 1 100 –100 V mV/°C μA nA nA VGS = –20 V, VDS = 0 V ID = 250 μA VDS = VGS, ID = 250 μA, Referenced to 25°C VGS = 10 V, ID = 12.5 A VGS = 10 V, ID = 12.5 A,TJ=125°C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 12.5 A 25 45 On Characteristics VGS(th) ΔVGS(th) ΔTJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance 2 3.9 –8 6 9 5 V mV/°C 9 14 mΩ A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 20 V, f = 1.0 MHz V G S = 0 V, 2659 605 298 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 14 12 37 29 25 22 59 46 63 ns ns ns ns nC nC nC VDS = 20 V, VGS = 10 V ID = 12.5 A, 45 11.2 11 FDS4470 Rev D1 (W) FDS4470 Electrical Characteristics Symbol IS VSD trr Qrr TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 2.1 1.2 A V nS nC Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current (Note 2) Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 12.5 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge 0.7 33 39 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when 2 mounted on a 1in pad of 2 oz copper b) 105°C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% FDS4470 Rev D1 (W) FDS4470 Typical Characteristics 80 70 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 5.5V 1.8 1.6 1.4 1.2 1 0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80 5.5V 6.0V 7.0V 8.0V VGS = 5.0V ID, DRAIN CURRENT (A) 60 50 40 30 5.0V 4.5V 20 10 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.019 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o ID = 12.5A VGS = 10V ID = 6.3A 0.016 0.013 TA = 125oC 0.01 0.007 TA = 25oC 0.004 125 150 175 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 90 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 75 ID, DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 60 45 TA = 125oC 30 25oC 15 -55oC 0 2.5 3.5 4.5 5.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4470 Rev D1 (W) FDS4470 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 4000 ID = 12.5A 8 VDS = 10V 20V CAPACITANCE (pF) 3200 f = 1 MHz VGS = 0 V 30V CISS 2400 6 4 1600 COSS 800 2 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 100μs ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1s 10s 1 VGS = 10V SINGLE PULSE RθJA = 125oC/W TA = 25oC 0.01 0.01 DC 1ms 10ms 100ms 40 SINGLE PULSE RθJA = 125°C/W TA = 25°C 30 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 125 C/W P(pk) t1 t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4470 Rev D1 (W) FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I22