FDS6299S_07

FDS6299S 30V N-Channel PowerTrench® SyncFET™ November 2007 tm FDS6299S 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Applications • Synchronous Rectifier for DC/DC Converters • Notebook Vcore low side switch • Point of load low side switch Features • 21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.5 V • • • • • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested Termination is Lead-free and RoHS Compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 21 105 2.5 1.2 1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W Package Marking and Ordering Information Device Marking FDS6299S Device FDS6299S Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDS6299S Rev C1 (W) FDS6299S 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage TA = 25°C unless otherwise noted Parameter Test Conditions VGS = 0 V, ID = 1 mA Min Typ Max Units 30 22 500 ±100 V mV/°C µA nA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance VDS = VGS, ID = 1 mA 1 1.7 –5 3.3 4.1 4.5 94 3.9 5.1 5.6 3 V mV/°C mΩ ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 19 A VGS=10 V, ID =21 A, TJ=125°C VDS = 10 V, ID = 2 1 A gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V G S = 0 V, 3880 1030 310 pF pF pF 3.1 Ω f = 1.0 MHz 0.4 1.8 Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 12 60 35 22 22 96 56 81 43 ns ns ns ns nC nC nC nC Total Gate Charge at VGS=10V Total Gate Charge at VGS=5V Gate–Source Charge Gate–Drain Charge VDS = 15 V, ID = 2 1 A 58 31 11 8 Drain–Source Diode Characteristics and Maximum Ratings VSD trr IRM Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A (Note 2) 420 32 2.1 34 700 mV ns A nC IF = 21 A, dIF/dt = 300 A/µs (Note 3) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 3. See “SyncFET Schottky body diode characteristics” below. FDS6299S Rev C1 (W) FDS6299S 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics 105 VGS = 10V 90 ID, DRAIN CURRENT (A) 4.5V 75 60 45 30 15 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 3.0V 4.0V 3.5V 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.0V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 45 60 75 ID, DRAIN CURRENT (A) 90 105 3.5V 4.0V 4.5V 5.0V 6.0V 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 21A VGS =10V ID = 10.5A 0.01 1.4 1.2 0.008 TA = 125oC 0.006 1 0.8 0.004 T A = 25 C 0.002 o 0.6 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 105 VDS = 5V IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 90 ID, DRAIN CURRENT (A) 75 60 45 TA = 125 C o 1 TA = 125 C o 25oC 0.1 -55 C o 30 15 25 C o 0.01 -55oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0.001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6299S Rev C (W) FDS6299S 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 4800 4000 CAPACITANCE (pF) VDS = 10V 20V f = 1MHz VGS = 0 V 8 Ciss 3200 2400 Coss 6 15V 4 1600 800 0 2 Crss 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RθJA = 125 C/W T A = 25 C o 40 SINGLE PULSE RθJA = 125°C/W TA = 25°C 10 30 1 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJC(t) = r(t) * RθJC RθJC = 125 °C/W 0.1 0.1 0.05 0.02 P(pk 0.01 0.01 t1 t2 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6299S Rev C1 (W) FDS6299S 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6299S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) TA = 125oC 0.01 0.001 TA = 100oC CURRENT : 0.8A/div 0.0001 TA = 25oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDS6299S SyncFET body diode reverse recovery characteristic. FDS6299S Rev C1 (W) FDS6299S 30V N-Channel PowerTrench® SyncFET™ TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Rev. I31 Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. No Identification Needed Full Production Obsolete Not In Production