FDS6574A_08

FDS6574A May 2008 FDS6574A 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. tmM Features • 16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 7 mΩ @ VGS = 2.5 V RDS(ON) = 9 mΩ @ VGS = 1.8 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter • RoHS Compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Gate-Source Voltage Drain Current – Continuous – Pulsed Drain-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V V A W 16 80 2.5 1.2 1.0 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6574A Device FDS6574A Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDS6574A Rev B2(W) FDS6574A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min 20 Typ Max Units V Off Characteristics ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 8 V, VGS = –8 V VDS = VGS, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µA 0.4 0.6 –2.7 4 4.4 5 5.3 115 7657 1432 775 VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 19.5 22 173 82 VDS = 10 V, VGS = 4.5 V ID = 16 A, 75 9 17 2.1 (Note 2) 10 1 100 –100 1.5 mV/°C µA nA nA V mV/°C 6 7 9 9 mΩ On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 16 A VGS = 2.5 V, ID = 15 A VGS = 1.8 V, ID = 13 A VGS = 4.5 V, ID = 16 A,TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 5 V, VDS = 10V, f = 1.0 MHz ID = 16 A V GS = 0 V, ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD 40 A S pF pF pF Dynamic Characteristics Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 35 36 277 131 105 ns ns ns ns nC nC nC A V Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 0.56 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6574A Rev B2(W) FDS6574A Typical Characteristics 100 VGS = 4.5V 3.5V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V 1.8V 1.5V ID, DRAIN CURRENT (A) 80 1.8 VGS = 1.5V 1.6 1.4 60 40 1.8V 1.2 1 0.8 0 20 40 60 80 100 ID, DIRAIN CURRENT (A) 2.5V 20 3.0V 3.5V 4.5V 0 0 0.5 1 1.5 2 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 16A VGS = 4.5V ID = 8A 0.01 1.4 1.2 0.008 TA = 125oC 0.006 1 0.8 0.004 TA = 25oC 1 2 3 4 5 0.6 -50 -25 0 25 50 75 100 o 0.002 125 150 175 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 90 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V 75 ID, DRAIN CURRENT (A) 60 45 30 15 0 0.5 0.8 1.1 TA = -55oC 125oC 25oC 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 1.4 1.7 2 0 0.2 0.4 0.6 0.8 1 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6574A Rev B2(W) FDS6574A Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 10000 ID = 16 A VDS = 5V 10V 8000 15V CAPACITANCE (pF) CISS f = 1 MHz VGS = 0 V 4 3 6000 2 4000 COSS 2000 CRSS 1 0 0 15 30 45 60 75 90 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s 10s 40 SINGLE PULSE RθJA = 125°C/W TA = 25°C 10 30 1 0.1 VGS = 4.5V SINGLE PULSE RθJA = 125oC/W TA = 25oC DC 20 10 0.01 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 R θJA(t) = r(t) *R θJA R θ JA = 1 25 C/W P(pk) t1 t2 TJ - T A = P * R θ JA(t) Duty Cycle, D = t 1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6574A Rev B2(W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDS6574A Rev B2(W) Preliminary First Production No Identification Needed Obsolete Full Production Not In Production