FDS6576

FDS6576 P-Channel 2.5V Specified PowerTrench December 2006 tm FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced ® PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features –11 A, –20 V. RDS(ON) = 0.014 RDS(ON) = 0.020 @ VGS = –4.5 V @ VGS = –2.5 V • • • • Extended VGSS range ( 12V) for battery applications. Low gate charge (43nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications • Load switch • Battery protection • Power management • High power and current handling capability. • RoHS Compliant. D 5 6 4 3 2 1 MOSFET D D D SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings –20 12 –11 –50 2.5 1.2 1.0 –55 to +150 Units V V A W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics R R R JA JA JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 C/W C/W C/W Package Marking and Ordering Information Device Marking FDS6576 Device FDS6576 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2006 Fairchild Semiconductor Corporation FDS6576 Rev E3 FDS6576 P-Channel 2.5V Specified PowerTrench Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 A ID = –250 A, Referenced to 25 C VDS = –16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = –12 V, VDS = 0 V Min –20 Typ Max Units V Off Characteristics –13 –1 100 –100 mV/ C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = –250 A ID = –250 A, Referenced to 25 C VGS = –4.5 V, ID = –11 A VGS = –2.5 V, ID = –8.8 A VGS = –4.5 V, ID = –11 A, TJ =125 C VGS = –4.5 V, VDS = –5 V VDS = –4.5 V, ID = –11 A –0.6 –0.83 3.5 8.2 11.5 11.1 –1.5 V mV/ C 14 20 23 m ID(on) gFS –25 50 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –10 V, f = 1.0 MHz V G S = 0 V, 4044 955 504 pF pF pF MOSFET Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 18 17 124 79 32 31 198 126 60 ns ns ns ns nC nC nC VDS = –10 V, VGS = –4.5 V ID = –11 A, 43 7 12 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage –2.1 (Note 2) A V –0.66 –1.2 Notes: 1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% FDS6576 Rev E3 FDS6576 P-Channel 2.5V Specified PowerTrench Typical Characteristics 50 6.0V ID, DRAIN CURRENT (A) 40 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 2.25 2 1.75 1.5 3.5V 1.25 1 0.75 0 0.5 1 1.5 2 2.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A) 4.5V 6.0V 10V VGS = 3.0V 30 20 10 2.5V 0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 ID = 12A VGS = 10V ID = 6 A 0.025 MOSFET 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. 50 VDS = 5V ID, DRAIN CURRENT (A) 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25oC 125oC VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC 30 20 10 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6576 Rev E3 FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 12A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V 3000 2500 CISS 2000 1500 1000 500 CRSS 0 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) COSS f = 1MHz VGS = 0 V 4 2 0 Figure 7. Gate Charge Characteristics. 100 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE R JA = 125oC/W TA = 25oC 0.01 0.01 1s 10s DC P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE R JA = 125 /W TA = 25 30 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 R JA(t) = r(t) + R JA R JA = 125 /W P(pk) 0.02 0.01 t1 t2 SINGLE PULSE 0.01 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6576 Rev E3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 Preliminary No Identification Needed Full Production Obsolete Not In Production FDS6576 Rev E3