FDS6676

FDS6676 May 2003 FDS6676 30V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 14.5 A, 30 V. RDS(ON) = 7 mΩ @ V GS = 10 V RDS(ON) = 8 mΩ @ V GS = 4.5 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (45 nC typ) • High power and current handling capability Applications • DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Conti nuous – Pulsed T A=25oC unless otherwise noted Parameter Ratings 30 ± 16 (Note 1a) Units V V A W 14.5 50 2.5 1.2 1.0 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 ° C/W ° C/W ° C/W Package Marking and Ordering Information Device Marking FDS6676 Device FDS6676 Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDS6676 Rev D (W) FDS6676 Electrical Characteristics Symbol WDSS IAR TA = 25°C unless otherwise noted Parameter (Note 2) Test Conditions VDD = 15 V, ID = 20 A Min Typ Max Units 370 20 mJ A Drain-Source Avalanche Ratings Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25° C VDS = 24 V, VGS = 16 V, VGS = –16 V, VGS = 0 V VDS = 0 V VDS = 0 V 30 24 1 100 –100 V mV/° C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = V GS, ID = 250 µA ID = 250 µA, Referenced to 25° C VGS = 10 V, ID = 14.5 A VGS = 4.5 V, ID = 13.5 A VGS = 10 V, ID = 14.5 A, TJ = 125° C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 14.5 A 1 1.5 –5 4.8 5.4 7.3 3 V mV/° C 7 8 11.5 mΩ ID(on) gFS 50 80 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, V GS = 0 V, f = 1.0 MHz 5103 836 361 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 15 9 87 40 27 18 139 64 63 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 1 4.5 A, 45 13 12 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 2.1 (Note 2) A V 0.7 1.2 FDS6676 Rev D (W) FDS6676 Notes: 1 . RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while R θCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2 . Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6676 Rev D (W) FDS6676 Typical Characteristics 50 VGS = 10V 4.5V ID, DRAIN CURRENT (A) 40 3.0V 30 2.5V 20 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 V GS = 3.0V 1.4 3.5V 1.2 4.0V 4.5V 6.0V 1 10V 10 0 0 0.5 1 1.5 0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.02 RDS(ON) , ON-RESISTANCE (OHM) 1.8 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 14.5A VGS = 10V ID = 7.25 A 0.015 o T A = 125 C 0.01 0.005 TA = 25 C o 0 -25 0 25 50 75 100 o 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 V DS = 5.0V ID, DRAIN CURRENT (A) 40 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 10 TA = 125 C 1 0.1 0.01 0.001 0.0001 25 C -55 C o o o 30 TA = 125 C 20 25 C 10 -55 C 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) o o o 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6676 Rev D (W) FDS6676 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14.5A 8 CAPACITANCE (pF) 7000 VDS = 5.0V 15V 10V 6000 CISS 5000 4000 3000 2000 COSS 1000 CRSS f = 1 MHz VGS = 0 V 6 4 2 0 0 10 20 30 40 50 60 70 80 90 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) RDS(ON) LIMIT 1ms 10ms 100ms 1s 1 DC V GS = 10V SINGLE PULSE o RθJA = 125 C/W T A = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 10 30 10s 20 0.1 10 0 0.001 0.01 0.1 1 10 100 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA (t) = r(t) + R θJA RθJA = 125 o C/W P(pk) t1 t2 SINGLE PULSE 0.1 0.1 0.05 0.02 0.01 0.01 T J - T A = P * RθJA (t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6676 Rev D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FASTâ CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerTrenchâ MicroFET™ QFET™ MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHERâ OPTOLOGICâ SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogicâ TruTranslation™ UHC™ UltraFETâ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2