FDS6676AS_08

FDS6676AS 30V N-Channel PowerTrench® SyncFET™ May 2008 tm FDS6676AS 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V • • • Includes SyncFET Schottky body diode Low gate charge (45nC typical) High performance trench technology for extremely low RDS(ON) and fast switching • • High power and current handling capability RoHS Compliant Applications • DC/DC converter • Low side notebook D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 14.5 50 2.5 1.2 1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W Package Marking and Ordering Information Device Marking FDS6676AS Device FDS6676AS Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDS6676AS Rev B2 FDS6676AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1 mA Min 30 Typ Max Units V Off Characteristics ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VGS = 0 V VDS = 0 V 20 500 ±100 mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA 1 ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 14.5 A VGS = 4.5 V, ID = 13.2 A VGS=10 V, ID =14.5A, TJ=125°C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 14.5 A 50 1.5 –4 4.5 5.9 6.7 66 3 V mV/°C 6.0 7.25 8.5 mΩ ID(on) gFS A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V G S = 0 V, 2510 710 270 pF pF pF 2.8 Ω f = 1.0 MHz 1.6 Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 10 12 43 29 20 22 69 46 31 35 54 46 63 35 ns ns ns ns ns ns ns ns nC nC nC nC VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 17 22 34 29 45 Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Gate–Source Charge Gate–Drain Charge VDD = 15 V, ID = 14.5 A, 25 7 8 FDS6676AS Rev B2 FDS6676AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol VSD trr IRM Qrr TA = 25°C unless otherwise noted Parameter Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge Test Conditions VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 14.5A, diF/dt = 300 A/µs Min Typ 0.4 0.5 27 1.9 26 Max Units 0.7 V nS A nC Drain–Source Diode Characteristics and Maximum Ratings (Note 2) (Note 2) (Note 3) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper FDS6676AS Rev B2 FDS6676AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics 50 VGS = 10V 3.5V 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 3.5V VGS = 3.0V ID, DRAIN CURRENT (A) 40 6.0V 4.5V 3.0V 30 20 1.4 1.2 1 0.8 4.0V 4.5V 6.0V 10V 10 2.5V 0 0 0.25 0.5 0.75 VDS, DRAIN-SOURCE VOLTAGE (V) 1 0 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 14.5A VGS =10V ID = 7.3 A 0.014 1.2 0.012 1 0.01 TA = 125 C 0.008 o 0.8 0.006 TA = 25oC 0.6 -55 -35 -15 5 25 45 65 85 o TJ, JUNCTION TEMPERATURE ( C) 105 125 0.004 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 50 VDS = 5V IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 o 40 ID, DRAIN CURRENT (A) 30 TA = 125oC 20 25 C 10 o 1 TA = 125 C -55oC 25oC 0.1 -55oC 0.01 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 0.001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6676AS Rev B2 FDS6676AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14.5A 3500 3000 20V f = 1MHz VGS = 0 V 8 CAPACITANCE (pF) VDS = 10V 2500 Ciss 6 15V 2000 1500 Coss 4 1000 500 Crss 2 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 10 40 SINGLE PULSE RθJA = 125°C/W TA = 25°C 30 1 10s DC VGS = 10V SINGLE PULSE o RθJA = 125 C/W T A = 25 C o 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJC(t) = r(t) * RθJC RθJC = 125 °C/W 0.1 0.1 0.05 0.02 P(pk 0.01 0.01 t1 t2 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6676AS Rev B2 FDS6676AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6676AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) TA = 125oC 0.01 0.8A/DIV 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 10nS/DIV Figure 12. FDS6676AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6676). Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 0.8A/DIV 10nS/DIV Figure 13. Non-SyncFET (FDS6676) body diode reverse recovery characteristic. FDS6676AS Rev B2 FDS6676AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics VDS VGS RGE VGS 0V tp L tP DUT IAS 0.01Ω + VDD IAS BVDSS VDS VDD vary tP to obtain required peak IAS tAV Figure 15. Unclamped Inductive Load Test Circuit Same type as Figure 16. Unclamped Inductive Waveforms + VGS DUT VGS Ig(REF Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform tON VDS VGS RGEN VGSPulse Width ≤ 1µs RL + DUT VDD 0V 10% 90% 50% 10% 50% 10% + VDD 10V QGS QGD QG(TOT) td(ON) VDS 90% tr tOFF td(OFF tf ) 90% VGS 0V Duty Cycle ≤ 0.1% Pulse Width Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms FDS6676AS Rev B2 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDS6676AS Rev.B2