FDS6679

FDS6679 March 2005 FDS6679 30 Volt P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V RDS(ON) = 13 mΩ @ VGS = – 4.5 V • Extended VGSS range (±25V) for battery applications • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –30 ±25 (Note 1a) Units V V A W –13 –50 2.5 1.2 1.0 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6679 Device FDS6679 Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2005 Fairchild Semiconductor Corporation FDS6679 Rev C1 (W) FDS6679 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = ±25 V, VGS = 0 V VDS = 0 V Min –30 Typ Max Units V Off Characteristics –23 –1 ±100 mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –13 A ID = –11 A VGS = –4.5 V, VGS=–10 V, ID =–13 A, TJ=125°C VGS = –10 V, VDS = –5 V VDS = –5 V, ID = –13 A –1 –1.6 5 7.3 10 9.5 –3 V mV/°C 9 13 13 mΩ ID(on) gFS –50 44 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –15 V, f = 1.0 MHz V G S = 0 V, 3939 972 498 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 19 10 110 65 34 20 176 104 100 ns ns ns ns nC nC nC VDS = –15 V, VGS = –10 V ID = –13 A, 71 12 15 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage –2.1 (Note 2) A V –0.7 –1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W (10 sec) 62.5°C/W steady state when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6679 Rev C1 (W) FDS6679 Typical Characteristics 50 VGS = -10V -6.0V -ID, DRAIN CURRENT (A) 40 -4.5V 30 -3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V -3.5V 3 2.6 2.2 1.8 1.4 1 0.6 -3.5V -4.0V -4.5V -5.0V -6.0V -10V VGS = -3.0V 20 10 -2.5V 0 0 0.5 1 1.5 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 10 20 30 40 50 -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -13A VGS = -10V 1.4 ID = -7.0A 0.03 TA = 125oC 0.02 TA = 25oC 0.01 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) 0 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 -IS, REVERSE DRAIN CURRENT (A) VDS = -5.0V -ID, DRAIN CURRENT (A) 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC 30 20 TA = -125oC 10 25oC -55oC 0 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6679 Rev C1 (W) FDS6679 Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -13A 8 VDS = -5V -10V 6000 5000 CAPACITANCE (pF) -15V CISS f = 1 MHz VGS = 0 V 4000 3000 2000 1000 0 COSS CRSS 6 4 2 0 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100µs 1ms 10ms 100ms 1s P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 50 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 40 10 SINGLE PULSE RθJA = 125°C/W TA = 25°C 30 1 10s DC 20 0.1 VGS = -10V SINGLE PULSE RθJA = 125oC/W T A = 25 C o 10 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 125 C/W o 0.1 0.1 0.05 P(pk) 0.02 0.01 0.01 SINGLE PULSE t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6679 Rev C1 (W)