FDS6900S

FDS6900S January 2003 FDS6900S Dual N-Ch PowerTrench SyncFet™ General Description The FDS6900S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 29mΩ @ VGS = 4.5V • Q1: Optimized for low switching losses Low Gate Charge ( 8 nC typical) RDS(on) = 30mΩ @ VGS = 10V RDS(on) = 37mΩ @ VGS = 4.5V 8.2A, 30V 6.9A, 30V S1D2 D S1D2 D S1D2 D G1 D 1 2 3 Q2 Q1 8 7 6 5 Dual N-Channel SyncFet SO-8 Pin 1 SO- D1 S D1 S S S2 G2 G 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 ±20 6.9 20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 8.2 30 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6900S 2003 Fairchild Semiconductor Corporation Device FDS6900S Reel Size 13” Tape width 12mm Quantity 2500 units FDS6900S Rev C(W) FDS6900S Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Test Conditions VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V Type Min Typ Max Units Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 30 20 24 500 1 100 –100 V mV/°C µA nA nA Off Characteristics Gate-Body Leakage, Reverse VGS = –20 V, VDS = 0 V (Note 2) On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, VDS = VGS, I D = 1 mA ID = 250 µA 1 1 2.3 1.4 –5.5 –5 13 20 20 25 38 30 3 3 V mV/°C ID = 10 mA, Referenced to 25°C ID = 250 uA, Referenced to 25°C VGS = 10 V, ID = 8.2 A VGS = 10 V, ID = 8.2 A, TJ = 125°C VGS = 4.5 V, ID = 7.6 A ID = 6.9 A VGS = 10 V, VGS = 10 V, ID = 6.9 A, TJ = 125°C VGS = 4.5 V, ID = 6.2 A VGS = 10 V, VDS = 5 V VDS = 5 V, VDS = 5 V, VDS = 15 V, f = 1.0 MHz ID = 8.2 A ID = 6.9 A VGS = 0 V, Q1 22 36 29 30 49 37 mΩ ID(on) gFS On-State Drain Current Forward Transconductance Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 20 69 18 1238 771 351 180 116 72 1.2 1.7 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 2) VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2: VDS = 15 V, ID = 8.2 A, VGS = 5 V Q1: VDS = 15 V, ID = 6.9 A, VGS = 5 V Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 13 9 14 5 29 26 11 4 12 8 4 2 4.3 2.5 23 18 25 10 46 42 20 8 17 11 ns ns ns ns nC nC nC FDS6900S Rev C (W) FDS6900S Electrical Characteristics Symbol IS Trr Qrr Trr Qrr VSD (continued) TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Q2 Q1 Q2 Q1 Typ Max Units 2.3 1.3 A ns nC ns nC 0.7 1.0 1.2 V Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge IF = 8.2 A, diF/dt = 300 A/µs IF = 6.9 A, diF/dt = 100 A/µs 17 24 18 15 0.4 0.6 0.7 (Note 3) (Note 3) (Note 2) (Note 2) (Note 2) Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A Voltage VGS = 0 V, IS = 5 A VGS = 0 V, IS = 1.3 A Q2 Q2 Q1 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125°C/W when mounted on a 2 0.02 in pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. FDS6900S Rev C (W) FDS6900S Typical Characteristics: Q2 50 2.8 VGS = 10V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 2.6 2.4 2.2 2 4.0V 1.8 1.6 1.4 1.2 10V 1 0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A) 4.5V 5.0V 6.0V VGS = 3.5V ID, DRAIN CURRENT (A) 40 30 4.0V 20 10 3.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 8.2A VGS = 10V ID = 4A 0.05 0.04 TA = 125oC 0.03 0.02 TA = 25oC 0.01 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = 5V 35 ID, DRAIN CURRENT (A) 30 TA = -55oC 125 C o IS, REVERSE DRAIN CURRENT (A) 25oC VGS = 0V o 1 TA = 125 C 25 20 15 10 5 0 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.1 25oC -55oC 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6900S Rev C (W) FDS6900S Typical Characteristics: Q2 10 VGS, GATE-SOURCE VOLTAGE (V) ID =8.2A 8 CAPACITANCE (pF) 20V 6 VDS = 10V 15V 1600 1400 1200 1000 800 COSS 600 400 200 CRSS CISS f = 1MHz VGS = 0 V 4 2 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 1 DC 0.1 VGS = 10V SINGLE PULSE RθJA = 135oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 10s P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 100µs 40 SINGLE PULSE RθJA = 135°C/W TA = 25°C 30 20 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS6900S Rev C (W) FDS6900S Typical Characteristics Q1 40 VGS = 10V 6.0V ID, DRAIN CURRENT (A) 30 4.5V 2.2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 VGS = 3.0V 1.8 1.6 3.5V 1.4 1.2 1 0.8 0 10 20 ID, DRAIN CURRENT (A) 30 40 4.0V 4.5V 6.0V 10V 3.5V 20 3.0V 10 2.5V 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.09 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 6.9A VGS = 10V ID = 3.5A 0.08 0.07 0.06 TA = 125oC 0.05 0.04 0.03 TA = 25 C 0.02 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o Figure 13. On-Resistance Variation with Temperature. 30 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 ID, DRAIN CURRENT (A) 25 C TA = -55oC o VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55 C o 20 125oC 15 10 5 0 1 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6900S Rev C (W) FDS6900S Typical Characteristics Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.9A 8 CAPACITANCE (pF) 20V 6 VDS = 10V 15V 1200 1000 CISS 800 600 400 200 f = 1 MHz VGS = 0 V 4 COSS 2 CRSS 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 Figure 17. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RθJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o Figure 18. Capacitance Characteristics. 50 100µs 40 SINGLE PULSE RθJA = 135°C/W TA = 25°C 30 1 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. T hermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6900S Rev C (W) FDS6900S Typical Characteristics (continued) This section copied from FDS6984S datasheet SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6900S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 125oC 0.01 0.001 100oC CURRENT : 1.6A/div 0.0001 25oC 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature TIME : 10ns/div Figure 22. FDS6900S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690). CURRENT : 1.6A/div TIME : 10ns/div Figure 23. Non-SyncFET (FDS6690) body diode reverse recovery characteristic. FDS6900S Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FASTâ CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerTrenchâ MicroFET™ QFET™ MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHERâ OPTOLOGICâ SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogicâ TruTranslation™ UHC™ UltraFETâ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2