FDS7066SN3

FDS7066SN3 January 2004 FDS7066SN3 30V N-Channel PowerTrench SyncFET™ General Description The FDS7066SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7066SN3 includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS7066SN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode. Features • 19 A, 30 V RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 6.0 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications • DC/DC converter • Motor drivesFeatures 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1a) Units V V A W °C 19 60 3.0 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDS7066SN3 Device FDS7066SN3 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS7066SN3 Rev C2 (W) FDS7066SN3 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 10 V, ID = 19 A ID = 17.5 A ID = 19 A, TJ = 125°C ID = 19 A Min 30 Typ Max Units V Off Characteristics 25 500 ±100 1 1.4 –3 4.5 5.0 98 5.5 6.0 8.0 3 mV/°C µA nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance V mV/°C mΩ gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD tRR QRR S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 4740 825 300 1.4 pF pF pF Ω 22 22 136 51 57 ns ns ns ns nC nC nC Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 12 12 85 32 VDS = 15 V, ID = 19 A, VGS = 5.0 V 41 10 10 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Schottky Diode Forward Current Drain–Source Schottky Diode (Note 2) VGS = 0 V, IS = 4.3 A Forward Voltage IF = 1 9 A Reverse Recovery Time diF/dt = 300 A/us Reverse Recovery Charge 4.3 0.4 26.6 28 0.7 A V ns nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7066SN3 Rev C2 (W) FDS7066SN3 Typical Characteristics 60 50 ID, DRAIN CURRENT (A) 40 30 20 10 2.0V 0 0 0.25 0.5 0.75 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 4.5V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.0V 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 3.0V 3.5V 4.0V 4.5V 6.0V 10V VGS = 2.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 19A VGS = 10V 1.3 ID = 9.5A 0.012 1.1 TA = 125oC 0.008 0.9 TA = 25oC 0.004 2 4 6 8 10 0.7 -50 -25 0 25 50 75 o 100 125 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125oC IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 -55oC 25oC 0.001 0.0001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7066SN3 Rev C2 (W) FDS7066SN3 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 19A 8 VDS = 10V 15V 6 20V 4 4500 6000 f = 1 MHz VGS = 0 V Ciss CAPACITANCE (pF) 3000 2 1500 Coss 0 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) Crss 0 0 6 12 18 24 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100µs 1ms ID, DRAIN CURRENT (A) 10 1s 1 VGS = 10V SINGLE PULSE RθJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 DC 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RθJA = 85°C/W TA = 25°C 30 20 0.1 10 0 0.01 0.1 1 t1, TIME (sec) 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) + RθJA RθJA = 85 C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7066SN3 Rev C2 (W) FDS7066SN3 Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7066SN3. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) TA = 125 C 0.01 o TA = 100oC 0.001 0.08A/div 0.0001 TA = 25oC 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) 12.5 nS/div Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature Figure 12. FDS7066SN3 SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS7066N3). 0.08A/div 12.5 nS/div Figure 13. Non-SyncFET (FDS7066N3) body diode reverse recovery characteristic. FDS7066SN3 Rev C2 (W) FDS7066SN3 Dimensional Outline and Pad Layout 2002 Fairchild Semiconductor Corporation FDS7066SN3 Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8