FDS7788_05

FDS7788 February 2005 FDS7788 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V RDS(ON) = 5.0 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching speed • High power and current handling capability • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Load switch • Motor drives D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 18 50 2.5 1.2 1.0 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 30 °C/W °C/W Package Marking and Ordering Information Device Marking FDS7788 Device FDS7788 Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2005 Fairchild Semiconductor Corporation FDS7788 Rev F (W) FDS7788 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = –20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, ID = 18 A ID = 17 A ID = 18 A, TJ = 125°C VDS = 5 V Min 30 Typ Max Units V Off Characteristics 25 10 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance 1 1.9 –5.4 3.0 3.8 4.3 3 V mV/°C 4.0 5.0 6.3 mΩ ID(on) gFS 30 112 A S VDS = 10 V, ID = 18 A Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 3845 930 368 pF pF pF Ω f = 1.0 MHz 1.4 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 15 13 62 36 27 23 99 58 48 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5.0 V ID = 18 A, 37 10 14 Drain–Source Diode Characteristics and Maximum Ratings VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 39 33 1.2 V nS nC IF = 18 A, diF/dt = 100 A/µs Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7788 Rev F(W) FDS7788 Typical Characteristics 80 2.2 VGS = 10V 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V ID, DRAIN CURRENT (A) 60 VGS = 3.5V 2 1.8 1.6 1.4 1.2 1 0.8 40 4.0V 4.5V 5.0V 6.0V 10V 20 3.0V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 20 40 ID, DRAIN CURRENT (A) 60 80 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.01 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 18A VGS = 10V 1.4 I D = 9A 0.008 1.2 0.006 TA = 125oC 0.004 TA = 25oC 0.002 1 0.8 0.6 -50 -25 0 25 50 75 100 o 0 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 80 VDS = 5V ID, DRAIN CURRENT (A) 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) 10 TA = 125oC 1 25oC 40 TA =125oC 25oC 0.1 -55oC 0.01 0.001 0.0001 20 -55oC 0 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7788 Rev F(W) FDS7788 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 18A 8 20V 6 VDS = 10V 15V 5000 f = 1MHz VGS = 0 V CISS 4000 CAPACITANCE (pF) 3000 4 2000 COSS 1000 CRSS 2 0 0 20 40 Qg, GATE CHARGE (nC) 60 80 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s 10s DC 40 SINGLE PULSE RθJA = 125°C/W TA = 25°C ID, DRAIN CURRENT (A) 10 30 1 VGS = 10V SINGLE PULSE o RθJA = 125 C/W TA = 25 C o 20 0.1 10 0.01 0.01 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 125 C/W P(pk) t1 t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS7788 Rev F(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™  Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15