FDS8638

FDS8638 N-Channel PowerTrench® MOSFET March 2009 FDS8638 N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant Applications Synchronous Rectifier Load Switch D D D D D D D SO-8 S Pin 1 S G S D 8 1S 5 6 7 4 G 3S 2S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 3) (Note 1a) (Note 1b) Ratings 40 ±20 18 100 541 2.5 1 -55 to +150 Units V V A mJ W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 °C/W Package Marking and Ordering Information Device Marking FDS8638 Device FDS8638 Package SO-8 Reel Size 13 “ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDS8638 Rev.C 1 www.fairchildsemi.com FDS8638 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 32 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 40 32 1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 16 A VGS = 10 V, ID = 18 A, TJ = 125 °C VDS = 5 V, ID = 18 A 1.0 1.9 -7 3.3 4.0 4.8 88 4.3 5.4 6.3 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 4270 1175 120 0.9 5680 1560 180 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 20 V, ID = 1 8 A VDD = 20 V, ID = 18 A, VGS = 10 V, RGEN = 6 Ω 16 6 39 5 61 27 12 7.2 30 13 63 10 86 39 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 18 A VGS = 0 V, IS = 2.1 A IF = 18 A, di/dt = 100 A/µs (Note 2) (Note 2) 0.81 0.71 51 30 1.3 1.2 82 49 V ns nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V. ©2009 Fairchild Semiconductor Corporation FDS8638 Rev.C 2 www.fairchildsemi.com FDS8638 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 100 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 VGS = 3.5 V VGS = 4.5 V 3.5 VGS = 3 V 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 3.0 VGS = 3.5 V 60 VGS = 4 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 VGS = 4.5 V VGS = 10 V VGS = 4 V 40 20 0 0.0 VGS = 3 V 0.5 0 20 40 60 80 100 ID, DRAIN CURRENT (A) 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 SOURCE ON-RESISTANCE (mΩ) ID = 18 A VGS = 10 V ID = 18 A 1.4 1.2 1.0 0.8 0.6 -75 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 15 rDS(on), DRAIN TO 10 TJ = 125 oC 5 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0 V 80 ID, DRAIN CURRENT (A) VDS = 5 V 10 TJ = 150 oC 60 TJ = 150 oC 1 TJ = 25 oC 40 TJ = 25 oC 20 TJ = -55 oC 0.1 TJ = -55 oC 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDS8638 Rev.C 3 www.fairchildsemi.com FDS8638 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 18 A 10000 Ciss VDD = 20 V 8 6 VDD = 15 V VDD = 25 V CAPACITANCE (pF) 1000 Coss 4 2 Crss 100 0 0 10 20 30 40 50 60 70 Qg, GATE CHARGE (nC) f = 1 MHz VGS = 0 V 50 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 ID, DRAIN CURRENT (A) 30 IAS, AVALANCHE CURRENT (A) 15 VGS = 10 V 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 10 VGS = 4.5 V 5 RθJA = 50 C/W o 1 0.01 0.1 1 10 100 1000 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 10 1 ms VGS = 10 V 100 SINGLE PULSE RθJA = 125 oC/W 10 ms 1 THIS AREA IS LIMITED BY rDS(on) 100 ms 1s 10 s DC 10 TC = 25 oC 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TC = 25 oC 1 0.5 -3 10 10 -2 0.01 0.01 0.1 1 10 100 200 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDS8638 Rev.C 4 www.fairchildsemi.com FDS8638 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RθJA = 125 C/W (Note 1b) o t2 NTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 0.001 -3 10 10 -2 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDS8638 Rev.C 5 www.fairchildsemi.com FDS8638 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I39 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production ©2009 Fairchild Semiconductor Corporation FDS8638 Rev.C 6 www.fairchildsemi.com