FDS8840NZ

FDS8840NZ N-Channel Power Trench® MOSFET April 2009 FDS8840NZ N-Channel PowerTrench® MOSFET 40 V, 18.6 A, 4.5 mΩ Features Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A HBM ESD protection level of 6 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant General Description The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications Synchronous Buck for Vcore and Server Notebook Battery Pack Load Switch D D D D D G S S Pin 1 S D S D S S D G SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 4) (Note 1a) (Note 1b) Ratings 40 ±20 18.6 63 600 2.5 1.0 -55 to +150 Units V V A mJ W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 °C/W Package Marking and Ordering Information Device Marking FDS8840NZ Device FDS8840NZ Package SO8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 1 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 32 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 40 31 1 ±10 V mV/°C µA µA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 18.6 A VGS = 4.5 V, ID = 14.9 A VGS = 10 V, ID = 18.6 A, TJ =125 °C VDS = 5 V, ID = 18.6 A 1.0 1.8 -6 3.9 4.6 5.9 83 4.5 6.0 7.0 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 5665 650 445 1.2 7535 865 670 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 20 V, ID = 18.6 A VDD = 20 V, ID = 18.6 A, VGS = 10 V, RGEN = 6 Ω 18 13 57 11 103 54 16 19 32 23 103 20 144 76 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 18.6 A VGS = 0 V, IS = 2.1 A IF = 18.6 A, di/dt = 100 A/µs 0.8 0.7 33 21 1.2 1.2 53 34 V ns nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25 °C, L = 3 mH, IAS = 20 A, VDD = 40 V, VGS = 10 V. ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 2 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 60 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 4.5 V VGS = 4 V VGS = 3.5 V 5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 50 ID, DRAIN CURRENT (A) 4 VGS = 3 V 40 30 VGS = 3 V 3 2 VGS = 3.5 V 20 10 0 0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 4 V VGS = 4.5 V 1 VGS = 10 V 0 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) 0.2 0.4 0.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.8 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 12 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 18.6 A VGS = 10 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 9 ID = 18.6 A rDS(on), DRAIN TO 6 TJ = 125 oC 3 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 60 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 50 ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 0 V VDS = 5 V 40 TJ = 150 oC 10 TJ = 150 oC TJ = 25 oC 30 20 TJ = 25 oC 1 TJ = -55 oC 10 TJ = -55 oC 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 3 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 18.6 A 10000 8 6 VDD = 20 V Ciss CAPACITANCE (pF) VDD = 15 V 1000 Coss 4 VDD = 25 V 2 0 0 30 60 Qg, GATE CHARGE (nC) f = 1 MHz VGS = 0 V Crss 90 120 100 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 Ig, GATE LEAKAGE CURRENT (A) -3 30 IAS, AVALANCHE CURRENT (A) 10 10 10 10 10 10 -4 VGS = 0 V TJ = 25 oC oC -5 TJ = 125 oC 10 TJ = 100 -6 -7 TJ = 25 oC TJ = 125 oC -8 1 0.001 -9 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 tAV, TIME IN AVALANCHE (ms) VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 100 P(PK), PEAK TRANSIENT POWER (W) 1 ms ID, DRAIN CURRENT (A) Figure 10. Igss vs Vgs 2000 1000 VGS = 10 V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 10 10 ms 100 1 THIS AREA IS LIMITED BY rDS(on) 100 ms 10 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 C o 1s 10 s DC 1 0.3 -3 10 -2 -1 0.01 0.01 0.1 1 10 100 10 10 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 4 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 0.0003 -3 10 -2 -1 RθJA = 125 C/W o 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 5 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench® Auto-SPM™ F-PFS™ The Power Franchise® PowerXS™ Build it Now™ FRFET® ® Global Power ResourceSM Programmable Active Droop™ CorePLUS™ Green FPS™ QFET® CorePOWER™ TinyBoost™ QS™ Green FPS™ e-Series™ CROSSVOLT™ TinyBuck™ Quiet Series™ CTL™ Gmax™ TinyLogic® RapidConfigure™ Current Transfer Logic™ GTO™ TINYOPTO™ EcoSPARK® IntelliMAX™ TinyPower™ EfficentMax™ ISOPLANAR™ ™ TinyPWM™ Saving our world, 1mW /W /kW at a time™ EZSWITCH™ * MegaBuck™ TinyWire™ ™* SmartMax™ MICROCOUPLER™ TriFault Detect™ SMART START™ MicroFET™ TRUECURRENT™* SPM® MicroPak™ ® µSerDes™ STEALTH™ MillerDrive™ ® Fairchild SuperFET™ MotionMax™ ® Fairchild Semiconductor SuperSOT™-3 Motion-SPM™ FACT Quiet Series™ SuperSOT™-6 UHC® OPTOLOGIC® ® FACT OPTOPLANAR® Ultra FRFET™ SuperSOT™-8 ® ® FAST UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ PDP SPM™ ® FlashWriter * XS™ ®* Power-SPM™ FPS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 www.fairchildsemi.com