FDS8936

May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 6 A, 30 V. R DS(ON) = 0.028 Ω @ VGS = 10 V, RDS(ON) = 0.040 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2 1 S FD 6A 3 89 pin 1 6 G2 7 8 SO-8 S1 G1 S2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless otherwise noted FDS8936A 30 ±20 (Note 1a) Units V V A 6 20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.6 1 0.9 -55 to 150 °C TJ,TSTG RθJA RθJC Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDS8936A Rev.B Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, I D = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 55°C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) o 30 32 1 10 100 -100 V mV/ oC µA µA nA nA ∆BVDSS/∆TJ IDSS VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25oC VGS = 10 V, I D = 6 A TJ =125°C VGS = 4.5 V, I D = 4.8 A 1 1.7 -4 0.023 0.036 0.034 20 19 ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance 3 V mV/oC ∆VGS(th)/∆TJ RDS(ON) 0.028 0.048 0.004 Ω ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Notes: On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 5 V VDS = 5 V, I D = 6 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz A S DYNAMIC CH ARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 650 345 95 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10 V, I D = 1 A VGS = 10 V , RGEN = 6 Ω 8 14 23 9 16 25 37 18 27 ns VDS = 10 V, I D = 6 A, VGS = 10 V 19 3.2 4.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, I S = 1.3 A (Note 2) 1.3 0.7 1.2 A V 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDS8936A Rev.B Typical Electrical Characteristics 30 ID , DRAIN-SOURCE CURRENT (A) 4 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED 24 VGS =10V 6.0V 5.0V 4.5V 4.0V 3 18 V GS = 3.5V 2 4.0 V 4.5 V 5.5 V 7.0V 12 3.5V 6 1 10V 3.0V 0 0 1 2 3 4 0 VDS , DRAIN-SOURCE VOLTAGE (V) 0 6 12 18 24 30 I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 0.1 V GS = 10V R DS(ON) , ON-RESISTANCE (OHM) I D = 6A I D = 3A 0.08 R DS(ON) , NORMALIZED 0.06 0.04 125°C 25°C 0.02 0 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation With Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 20 I S , REVERSE DRAIN CURRENT (A) VDS = 10V ID , DRAIN CURRENT (A) 25 20 15 10 VGS = 0V TJ = 125°C 1 25°C 0.1 -55°C 0.01 TJ = 125°C 5 0 25°C -55°C 1 2 3 4 5 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8936A Rev.B Typical Electrical Characteristics (continued) 10 V GS , GATE-SOURCE VOLTAGE (V) 2000 ID = 6A 8 V = 5V DS 1200 10V CAPACITANCE (pF) 800 20V 6 Css i Coss 400 4 200 2 100 f = 1 MHz VGS = 0 V 0.2 0.5 1 2 5 C ss r 0 0 5 10 Q g , GATE CHARGE (nC) 15 20 50 0.1 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 30 I D , DRAIN CURRENT (A) 10 5 2 1 0.5 30 MIT ) LI (ON DS R 100 1m s 10m s 10 0m s 1s us 25 20 15 10 5 0 0.01 0.1 0.05 VGS =10V SINGLE PULSE Rθ JA = 135 °C/W T A = 25°C A 0.2 0.5 1 2 5 10s DC POWER (W) SINGLE PULSE R θJA =135° C/W T A = 25°C 0.01 0.1 0.1 0.5 1 10 50 100 300 10 30 50 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R θJA (t) = r(t) * R θJA R θJA = 135 °C/W t1 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. thermal response will change depending on the circuit board design. Transient FDS8936A Rev.B