FDS8949_10

FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET February 2010 FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29mΩ Features Max rDS(on) = 29mΩ at VGS = 10V Max rDS(on) = 36mΩ at VGS = 4.5V Low gate charge High performance trench technology for extremely low rDS(on) High power and current handling capability Qualified to AEC Q101 RoHS compliant tm General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications Inverter Power suppliers D2 D2 D1 D1 SO-8 Pin 1 S1 G1 G2 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation for Dual Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 3) (Note 1a) Ratings 40 ±20 6 20 26 2 1.6 0.9 -55 to 150 °C W Units V V A mJ Thermal Characteristics RθJA RθJA RθJC Thermal Resistance-Single operation, Junction to Ambient Thermal Resistance-Single operation, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1b) (Note 1) 81 135 40 °C/W Package Marking and Ordering Information Device Marking FDS8949 Device FDS8949_F085 Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2010 Fairchild Semiconductor Corporation FDS8949_F085 Rev. A 1 www.fairchildsemi.com FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, referenced to 25°C VDS = 32V, VGS = 0V TJ = 55°C VGS = ±20V,VDS = 0V 40 33 1 10 ±100 V mV/°C µA µA nA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 6A VGS = 4.5V, ID = 4.5A VGS = 10V, ID = 6A,TJ = 125°C VDS = 10V,ID = 6A 1 1.9 -4.6 21 26 29 22 29 36 43 S mΩ 3 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 715 105 60 1.1 955 140 90 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller”Charge VDS = 20V, ID = 6A,VGS = 5V VDD = 20V, ID = 1A VGS = 10V, RGEN = 6Ω 9 5 23 3 7.7 2.4 2.8 18 10 37 6 11 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = 6A (note 2) Reverse Recovery Time (note 3) Reverse Recovery Charge IF = 6A, diF/dt = 100A/µs 0.8 17 7 1.2 26 11 V ns nC Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 81°C/W when mounted on a 1in2 pad of 2 oz copper b) 135°C/W when mounted on a minimum pad . Scale 1:1 on letter size paper 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 3: Starting TJ = 25°C, L = 1mH, IAS = 7.3A, VDD = 40V, VGS = 10V. FDS8949_F085 Rev. A 2 www.fairchildsemi.com FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 20 VGS = 3.5V VGS = 4.5V 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V PULSE DURATION = 300µs DUTY CYCLE = 20%MAX 16 ID, DRAIN CURRENT (A) 2.5 2.0 1.5 1.0 0.5 VGS = 3.0V VGS = 3.5V 12 8 4 0 0.0 PULSE DURATION = 300µs DUTY CYCLE = 20%MAX VGS = 3.0V VGS = 4.5V VGS = 10V 0.5 1.0 1.5 2.0 2.5 0 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 8 12 ID, DRAIN CURRENT(A) 16 20 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 70 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 6A VGS = 10V ID = 3.5A 60 50 40 PULSE DURATION = 300µs DUTY CYCLE = 20%MAX TJ = 125oC 30 20 TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 10 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 20 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 300µs DUTY CYCLE = 20%MAX 16 12 8 4 0 1.5 TJ = 125oC VDD = 10V VGS = 0V 10 1 0.1 0.01 1E-3 0.2 TJ = -55oC TJ = 125oC TJ = 25oC TJ = 25oC TJ = -55oC 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS8949_F085 Rev. A FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V 10 3 Ciss 8 6 4 2 0 VDD = 20V VDD = 30V CAPACITANCE (pF) Coss 10 2 Crss 0 4 8 12 Qg, GATE CHARGE(nC) 16 10 1 f = 1MHz VGS = 0V 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 7. Gate Charge Characteristics 10 IAS, AVALANCHE CURRENT(A) Figure 8. Capacitance vs Drain to Source Voltage 7 6 ID, DRAIN CURRENT (A) 5 4 3 2 1 0 25 RθJA = 81 C/W o VGS = 10V 1 TJ = 125oC TJ = 25oC VGS = 4.5V 0.1 -3 10 10 -2 10 10 10 10 tAV, TIME IN AVALANCHE(ms) -1 0 1 2 10 3 50 75 100 125 150 TA, Ambient TEMPERATURE (oC) Figure 9. Unclamped Inductive Switching Capability 100 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V ID, DRAIN CURRENT (A) 10 100us 1ms 1 LIMITED BY PACKAGE 10ms 100ms SINGLE PULSE TJ = MAX RATED TA = 25oC 10 SINGLE PULSE RθJA = 135°C/W TA = 25°C 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1s 10s DC SINGLE PULSE 0.01 0.01 0.1 1 10 100 300 1 0.7 -4 10 10 -3 VDS, DRAIN-SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDS8949_F085 Rev. A 4 www.fairchildsemi.com FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 P(PK) t1 t2 RθJA(t) = r(t)*RθJA RθJA = 135oC/W TJ-TA =P*RθJA 0.01 DUTY FACTOR: D = t1/t2 -2 -1 0 1 2 SINGLE PULSE 1E-3 -3 10 10 10 10 10 10 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDS8949_F085 Rev. A 5 www.fairchildsemi.com FDS8949_F085 Dual N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench® AccuPower™ The Power Franchise® FRFET® ® Global Power ResourceSM PowerXS™ Auto-SPM™ Green FPS™ Programmable Active Droop™ Build it Now™ Green FPS™ e-Series™ QFET® CorePLUS™ TinyBoost™ QS™ Gmax™ CorePOWER™ TinyBuck™ Quiet Series™ GTO™ CROSSVOLT™ TinyCalc™ RapidConfigure™ IntelliMAX™ CTL™ TinyLogic® ISOPLANAR™ Current Transfer Logic™ ™ TINYOPTO™ ® MegaBuck™ DEUXPEED TinyPower™ Dual Cool™ Saving our world, 1mW/W/kW at a time™ MICROCOUPLER™ TinyPWM™ EcoSPARK® SignalWise™ MicroFET™ TinyWire™ EfficentMax™ SmartMax™ MicroPak™ TriFault Detect™ SMART START™ MicroPak2™ ® TRUECURRENT™* SPM® MillerDrive™ μSerDes™ STEALTH™ MotionMax™ Fairchild® SuperFET™ Motion-SPM™ Fairchild Semiconductor® SuperSOT™-3 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-6 OPTOLOGIC® FACT® ® Ultra FRFET™ ® OPTOPLANAR SuperSOT™-8 FAST ® UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ FlashWriter® * PDP SPM™ XS™ ®* FPS™ Power-SPM™ F-PFS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FDS8949_F085 Rev. A 6 www.fairchildsemi.com