FDS8958A_08

FDS8958A April 2008 FDS8958A Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • • tm Features • Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package -5A, -30V 7.0A, 30V D1 D D1 D DD2 D2 D 5 6 G2 S2 G Q2 4 3 SO-8 Pin 1 SO-8 7 8 Q1 2 1 G1 S1 S S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA = 25°C unless otherwise noted Parameter Q1 30 (Note 1a) Q2 30 ±20 -5 -20 2 1.6 0.9 13 -55 to +150 Units V V A W mJ °C ±20 7 20 2 1.6 0.9 54 - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy (Note 1a) (Note 1c) EAS TJ, TSTG (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8958A ©2008 Fairchild Semiconductor Corporation FDS8958A 13” 12mm 2500 units FDS8958A Rev F3 (W) FDS8958A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Test Conditions VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 0 V Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 All All Q1 Q2 Q1 Q2 Q1 1 -1 1.9 -1.7 -4.5 4.5 19 27 24 42 57 65 20 -20 25 10 575 528 145 132 65 70 2.1 6.0 30 -30 25 -23 1 -1 100 -100 3 -3 V mV/°C µA nA nA V mV/°C 28 42 40 52 78 80 A S mΩ Off Characteristics Gate-Body Leakage, Reverse VGS = -20 V, (Note 2) On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125°C ID = 6 A VGS = 4.5 V, VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125°C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A ID =-5 A VDS = -5 V, Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance pF pF pF Ω Q2 Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz Gate Resistance FDS8958A Rev F3 (W) FDS8958A Electrical Characteristics Symbol Parameter (continued) TA = 25°C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Ω Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 7 5 13 23 14 3 9 11.4 9.6 1.7 2.2 2.1 1.7 16 14 10 24 37 25 6 17 16 13 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' board design. s Maximum Continuous Drain-Source Diode Forward Current Maximum Plused Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A Q1 IF = 7 A, diF/dt = 100 A/µs Q2 IF = -5 A, diF/dt = 100 A/µs (Note 2) (Note 2) (Note 2) 0.75 -0.88 19 19 9 6 1.3 -1.3 20 -20 1.2 -1.2 A A V nS nC a) 78°/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°/W when 2 mounted on a .02 in pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2). FDS8958A Rev F3 (W) FDS8958A Typical Characteristics: Q1 (N-Channel) 20 16 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10.0V 2.2 4.0V 3.5V 6.0V 12 1.8 4.5V VGS = 3.5V 1.4 4.0 4.5V 5.0 6.0V 10.0V 8 3.0V 4 1 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.6 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = 7A VGS = 10.0V 0.07 0.06 0.05 0.04 0.03 TA = 25oC 0.02 0.01 TA = 125oC ID = 3.5A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 20 VDS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) 16 10 1 0.1 0.01 0.001 TA = 125oC ID, DRAIN CURRENT (A) 12 TA = 125oC -55oC 25oC 25oC -55oC 8 4 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958A Rev F3 (W) FDS8958A Typical Characteristics: Q1 (N-Channel) 10 800 ID = 7A VDS = 10V 20V 600 15V f = 1MHz VGS = 0 V VGS, GATE-SOURCE VOLTAGE (V) 8 CAPACITANCE (pF) 6 Ciss 400 4 Coss 200 2 Crss 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 10 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 10 100ms 1ms 10ms 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 135oC/W TA = 25 C o 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 1 0.01 0.1 tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability Figure 50 SINGLE PULSE Rθ J A = 135° C/W C TA = 25° P(pk), PEAK TRANSIENT POWER (W) 40 30 20 10 0 0.001 0.01 0.1 1 t 1, TIME (sec) 10 Figure 11. Single Pulse Maximum Power Dissipation.   0.1 Tj=125 1 10 100 FDS8958A Rev F3 (W)   1 IAS, AVALANCHE CURRENT (A) RDS(ON) LIMIT 100µs Tj=25 100 1000 FDS8958A Typical Characteristics: Q2 (P-Channel) 30 -5.0V -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) -6.0V 2 1.8 1.6 -4.5V 1.4 1.2 1 0.8 0 1 2 3 4 5 6 0 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) -5.0V -6.0V -7.0V -8.0V -10V VGS=-4.0V 20 -4.0V 10 -3.5V -3.0V 0 Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -5A VGS = -10V ID = -2.5A 0.2 1.4 1.2 0.15 TA = 125oC 0.1 T A = 25oC 0.05 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 14. On-Resistance Variation with Temperature. 15 -IS, REVERSE DRAIN CURRENT (A) Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V -ID, DRAIN CURRENT (A) 12 TA = -55oC 125oC 25oC 10 1 0.1 0.01 0.001 0.0001 0 VGS =0V TA = 125oC 25oC -55oC 9 6 3 0 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958A Rev F3 (W) FDS8958A Typical Characteristics: Q2 (P-Channel) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE R θ JA (t) = r(t) * R θ A R θ J A = 1 35 °C/W P(pk) P(pk) t1 t t2 t2 0.01 T J - T A = P * R θ J A(t) Duty Cycle, D = t1 / t 2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8958A Rev F3 (W) FDS8958A TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDS8958A Rev F3 (W) Preliminary First Production No Identification Needed Obsolete Full Production Not In Production