FDS8960C Dual N & P-Channel PowerTrench® MOSFET
November 2005
FDS8960C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • •
Features
• Q1: N-Channel RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V • Q2: P-Channel RDS(on) = 0.053Ω @ VGS = –10V RDS(on) = 0.087Ω @ VGS = –4.5V Fast switching speed RoHS compliant 7.0A, 35V
–5A, –35V
D1 D
D1 D
DD2 D2 D
Q2
5 6
Q1
4 3 2 1
SO-8
Pin 1 SO-8
G1 S1 S
G2 S2 G
7 8
S
S
Absolute Maximum Ratings
Symbol
VDSS VDS(Avalanche) VGSS ID PD
TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 3)
Q1
35 40 ±20 7 20
(Note 1a) (Note 1b) (Note 1c)
Q2
–35 –40 ±25 –5 –20 2 1.6 1 0.9 –55 to +150
Units
V V V A W
(Note 1a)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C °C/W °C/W
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
Package Marking and Ordering Information
Device Marking
FDS8960C
Device
FDS8960C
Reel Size
13”
Tape width
12mm
Quantity
2500 units
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©2005 Fairchild Semiconductor Corporation FDS8960C Rev C1(W)
FDS8960C Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics
Symbol
EAS IAS
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward
Test Conditions
VDD = 35 V, ID = 7 A, L = 1 mH
Type Min Typ
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 35 –35 31 –40 7 –5
Max Units
24.5 12.5 mJ mJ A
Drain-Source Avalanche Ratings
VDD = –35 V, ID =–5 A, L = 1 mH
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSSF IGSSR IGSSR IGSSF ID = 250 μA VGS = 0 V, ID = –250 μA VGS = 0 V, ID = 250 μA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 28 V, VGS = 0 V VGS = 0 V VDS = –28 V, VGS = 20 V, VDS = 0 V VDS = 0 V VDS = 0 V VDS = 0 V V mV/°C 1 –1 100 –100 100 –100 μA nA nA nA nA
Gate-Body Leakage, Reverse VGS = –20 V, Gate-Body Leakage, Forward VGS = 25 V, Gate-Body Leakage, Reverse VGS = –25 V,
(Note 2)
On Characteristics
VGS(th) ΔVGS(th) ΔTJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
gFS
Forward Transconductance
ID = 250 μA VDS = VGS, ID = –250 µA VDS = VGS, ID = 250 μA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A ID = 6 A VGS = 4.5 V, VGS = 10 V, ID = 7 A, TJ = 125°C ID = –5 A VGS = –10 V, ID = –4 A VGS = –4.5 V, VGS = –10 V, ID = –5 A, TJ = 125°C VDS = 5 V, ID = 7 A ID =–5 A VDS = –5 V, Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Q1 Q2 Q1 Q2 Q1
1 –1
2 –1.8 –5 4 20 25 29 44 70 61 23 9 570 540 126 113 52 60 2 6
3 –3
V mV/°C
24 32 37 53 87 79
mΩ
Q2
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Q2 Reverse Transfer Capacitance VDS = –15 V, VGS = 0 V, f = 1.0 MHz Gate Resistance f = 1.0 MHz pF pF pF Ω
FDS8960C Rev C1(W)
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FDS8960C Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics
Symbol Parameter
(continued)
TA = 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = –15 V, ID = -1 A, VGS = –10V, RGEN = 6 Ω Q1 VDS = 15 V, ID = 7 A, VGS = 5 V Q2 VDS = –15 V, ID = –5 A,VGS = –5 V
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
8 12 5 16 23 20 3 5 5.5 5.7 1.8 1.8 1.8 2
16 22 10 29 37 32 6 10 7.7 8
ns ns ns ns nC nC nC
Drain–Source Diode Characteristics
IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = –1.3 A Q1 IF = 7 A, diF/dt = 100 A/µs Q2 IF = -5 A, diF/dt = 100 A/µs
(Note 2) (Note 2)
0.8 –0.8 20 17 10 5
1.3 –1.3 1.2 –1.2
A V nS nC
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper
b) 125°C/W when mounted on a .02 in2 pad of 2 oz copper
c) 135°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device.
FDS8960C Rev C1(W)
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FDS8960C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q1 (N-Channel)
20
2.6 VGS = 10V 6.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 2.4 2.2 2 VGS = 3.5V 1.8 1.6 1.4 1.2 1 0.8
0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2
16 ID, DRAIN CURRENT (A)
12
8
4.0V 4.5V 5.0V 6.0V 10V
3.0V
4
0
0
4
8 12 ID, DRAIN CURRENT (A)
16
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.065 ID = 3.5A RDS(ON), ON-RESISTANCE (OHM) 0.055
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4
ID = 7A VGS = 10V
0.045 TA = 125oC 0.035
1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0.025 TA = 25oC 0.015 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10
Figure 3. On-Resistance Variation with Temperature.
30 VDS = 5V 25 ID, DRAIN CURRENT (A) 125oC 20 IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25oC
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125oC 1 25oC -55oC 0.01
15
0.1
10
5
0.001
0 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.5
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8960C Rev C1(W)
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FDS8960C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q1 (N-Channel)
10
800
VGS, GATE-SOURCE VOLTAGE (V)
ID = 7A 8
VDS = 10V
15V
700
f = 1 MHz VGS = 0 V Ciss
CAPACITANCE (pF)
20V 6
600 500 400 300
4
Coss
200 100
2
Crss
0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 35
0 0 2 4 6 8 10 12
0
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT 100μs
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
40
ID, DRAIN CURRENT (A)
10
1ms 10ms 100ms
SINGLE PULSE RθJA = 135°C/W TA = 25°C
30
1
10s DC VGS = 10V SINGLE PULSE RθJA = 135oC/W TA = 25oC
1s
20
0.1
10
0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
100
40 I(pk), PEAK TRANSIENT CURRENT (A)
30
I(AS), AVALANCHE CURRENT(A)
SINGLE PULSE RθJA = 135°C/W TA = 25°C
T J = 25 C
o
20
10
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
1 0.01
0.1
1
10
tAV, TIME IN AVANCHE(ms)
Figure 11. Single Pulse Maximum Peak Current
Figure 12. Unclamped Inductive Switching Capability
FDS8960C Rev C1(W)
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FDS8960C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q2 (P-Channel)
20
3.4 -4.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = -10V
-ID, DRAIN CURRENT (A) 16
-6.0V
3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -4.0V -4.5V -5.0V -6.0V -10V VGS = - 3.5V
12
8
-3.5V
4
-3.0V
0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS, DRAIN TO SOURCE VOLTAGE (V)
0
5
10 -ID, DRAIN CURRENT (A)
15
20
Figure 13. On-Region Characteristics.
Figure 14. On-Resistance Variation with Drain Current and Gate Voltage.
0.2 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100
o
ID = -5A VGS = - 10V
ID = -2.5A
0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02
TA = 125oC
TA = 25oC
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. On-Resistance Variation with Temperature.
20 VDS = -5V
Figure 16. On-Resistance Variation with Gate-to-Source Voltage.
100
-IS, REVERSE DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
16 TA = -55oC 12 125oC 8 25 C
o
10 1 0.1 0.01 0.001 0.0001
VGS = 0V TA = 125oC 25oC -55oC
4
0 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Transfer Characteristics.
Figure 18. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8960C Rev C1(W)
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FDS8960C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q2 (P-Channel)
10 -VGS, GATE-SOURCE VOLTAGE (V)
800
ID = -5A
8
VDS = -10V
-15V -20V
CAPACITANCE (pF)
700
f = 1 MHz VGS = 0 V CISS
600 500 400 300
6
4
COSS
200 100
2
CRSS
0 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 35 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 19. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 20. Capacitance Characteristics.
50
-ID, DRAIN CURRENT (A)
RDS(ON) LIMIT 10 10ms 100ms 1 DC 0.1 VGS = -10V SINGLE PULSE RθJA = 135oC/W TA = 25oC 0.01 0.1 1 10 1s 10s 1ms
100μs
40
SINGLE PULSE RθJA = 135°C/W TA = 25°C
30
20
10
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 21. Maximum Safe Operating Area.
Figure 22. Single Pulse Maximum Power Dissipation.
10 I(AS), AVALANCHE CURRENT(A)
30 I(pk), PEAK TRANSIENT CURRENT(A)
SINGLE PULSE RθJA = 135°C/W TA = 25°C
20
TJ = 25 C
o
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
1 0.01
0.1
1
10
tAV, TIME IN AVANCHE(ms)
Figure 23. Single Pulse Maximum Peak Current
Figure 24. Unclamped Inductive Switching Capability
FDS8960C Rev C1(W)
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FDS8960C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RθJA(t) = r(t) * RθJA RθJA = 135 C/W P(pk) t1 t2
SINGLE PULSE
o
0.1
0.1 0.05 0.02 0.01
0.01
TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000
0.001 0.0001 0.001
Figure 25. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
FDS8960C Rev C1(W)
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