FDS8984_07

FDS8984 N-Channel PowerTrench® MOSFET May 2007 FDS8984 N-Channel PowerTrench® MOSFET 30V, 7A, 23mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. tm Features Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A Low gate charge 100% RG tested RoHS Compliant D1 D D1 D DD2 D2 D 5 6 Q2 4 3 2 Q1 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 7 8 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Single Pulse Avalache Energy Power Dissipation for Single Operation Derate above 25°C Operating and Storage Temperature (Note 2) (Note 1a) Ratings 30 ±20 7 30 32 1.6 13 -55 to 150 Units V V A A mJ W mW/°C °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS8984 Device FDS8984 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDS8984 Rev. A1 1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V VGS = 0V TJ = 125°C 30 23 1 250 ±100 V mV/°C µA nA VGS = ±20V,VDS = 0V On Characteristics (Note 3) VGS(th) ∆VGS(th) ∆TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 7A Drain to Source On Resistance VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A, TJ = 125°C 1.2 1.7 - 4.3 19 24 26 23 30 32 mΩ 2.5 V mV/°C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz f = 1MHz 475 100 65 0.9 635 135 100 1.6 pF pF pF Ω Switching Characteristics (Note 3) td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 15V, VGS = 10V, I D = 7A VDS = 15V, VGS = 5V, I D = 7A VDD = 15V, ID = 7A VGS = 10V, RGS = 33Ω 5 9 42 21 9.2 5.0 1.5 2.0 10 18 68 34 13 7 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge ISD = 7A ISD = 2.1A IF = 7A, di/dt = 100A/µs 0.9 0.8 1.25 1.0 33 20 V V ns nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of oz copper c) 135°C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width