FDD6692/FDU6692
April 2001
FDD6692/FDU6692
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
• 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V
• Low gate charge (18 nC typical) • Fast switching
Applications
• DC/DC converter • Motor drives
• High performance trench technology for extremely low RDS(ON)
D
D G S
I-PAK (TO-251AA) GDS
G
D-PAK TO-252 (TO-252)
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
30 ±16
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
54 162 57 3.8 1.6 -55 to +175
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.6 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6692 FDU6692 Device FDD6692 FDU6692 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75
2001 Fairchild Semiconductor Corporation
FDD/FDU6692 Rev C(W)
FDD6692/FDU6692
Electrical Characteristics
Symbol
W DSS IAR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD = 15 V, ID=14A
Min
Typ
Max Units
165 14 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = –16 V, VGS = 0 V VDS = 0 V VDS = 0 V
30 26 1 100 –100
V mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 14 A ID = 13 A VGS = 4.5 V, VGS = 10 V, ID = 14 A, TJ = 125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 14 A
1
1.6 –5 9.5 11.5 16.5
3
V mV/°C
12 14.5 18
mΩ
ID(on) gFS
50 54
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
2164 357 138
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω
9 5 35 10
18 10 56 20 25
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 14 A,
18 5 5
Drain–Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A
(Note 2)
3.2 0.72 1.2
A V
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Typical Characteristics
50 6.0V ID, DRAIN CURRENT (A) 40 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 2.25 2 1.75 1.5 3.5V 1.25 1 0.75 0 0.5 1 1.5 2 2.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A) 4.5V 6.0V 10V VGS = 3.0V
30
20
10
2.5V
0 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.03 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 14A VGS = 10V
ID = 7.0 A 0.025
0.02 TA = 125oC 0.015
0.01 TA = 25oC 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 5V ID, DRAIN CURRENT (A) 40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
25oC 125oC
VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC
30
20
10
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V 2500 CISS 2000 1500 1000 500 CRSS 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) COSS 3000 f = 1MHz VGS = 0 V
4
2
Figure 7. Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s 1 VGS = 10V SINGLE PULSE RθJA = 96oC/W TA = 25oC 0.01 0.01 DC 80
Figure 8. Capacitance Characteristics.
60
SINGLE PULSE RθJA = 96°C/W TA = 25°C
40
20
0.1
0 0.1 1 10 100 0.1 1 10 t1, TIME (sec) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
R θ JA (t) = r(t) + R θ JA R θ JA = 9 6 °C/W
0.05 0.02
0.1
0.1
P(pk) t1 t2 T J - T A = P * R θ JA (t) Duty Cycle, D = t1 / t2
0.01
0.01
SINGLE PULSE
0 .001 0.001
0.01
0.1
1 t1 , TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD/ FDU6692 Rev. C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™
DISCLAIMER
FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™
PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Star* Power™ Stealth™
SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H1