FDV303

August 1997 FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Features 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T. SOT-23 Mark:303 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter TA = 25oC unless other wise noted FDV303N 25 8 Units V V A Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, VIN Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Thermal Resistance, Junction-to-Ambient 0.68 2 0.35 -55 to 150 6.0 W °C kV THERMAL CHARACTERISTICS RθJA 357 °C/W © 1997 Fairchild Semiconductor Corporation FDV303N Rev.D1 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 o C VDS = 20 V, VGS = 0 V TJ = 55°C IGSS Gate - Body Leakage Current (Note) 25 26 1 10 100 V mV / oC µA µA nA mV / oC 1.5 0.45 0.8 0.6 A 1.45 S V ∆BVDSS/∆TJ IDSS VGS = 8 V, VDS= 0 V ID = 250 µA, Referenced to 25 o C VDS = VGS, ID = 250 µA VGS = 4.5 V, ID = 0.5 A TJ =125°C VGS = 2.7 V, ID = 0.2 A 0.65 -2.6 0.8 0.33 0.52 0.44 0.5 ON CHARACTERISTICS ∆VGS(th)/∆TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp. Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance Ω ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Note: On-State Drain Current Forward Transconductance VGS = 2.7 V, VDS = 5 V VDS = 5 V, ID= 0.5 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note) 50 28 9 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω 3 8.5 17 13 6 18 30 25 2.3 ns ns ns ns nC nC nC VDS = 5 V, ID = 0.5 A, VGS = 4.5 V 1.64 0.38 0.45 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note) 0.3 0.83 1.2 A V Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV303N Rev.D1 Typical Electrical Characteristics 1.5 2 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 1.2 VGS = 4.5V 3.5 3.0 2.7 2.5 2.0 VGS = 2.0V 1.5 0.9 2.5 2.7 3.0 3.5 4.5 0.6 1 0.3 1.5 0 0.5 0 0.5 1 1.5 2 VDS , DRAIN-SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE 2 I D =0.5 A R DS(on) , ON-RESISTANCE (OHM) ID= 0.5A 1.6 R DS(ON), NORMALIZED 1.4 VGS = 4.5 V 1.2 1.2 1 0.8 125°C 0.4 0.8 25°C 0.6 -50 0 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 1 1.5 2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V) 4.5 5 Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. 1 IS , REVERSE DRAIN CURRENT (A) V DS = 5.0V ID , DRAIN CURRENT (A) 0.8 T = -55°C J 25°C 125°C 1 V GS = 0V 0.1 TJ = 125°C 25°C 0.6 0.4 0.01 -55°C 0.2 0.001 0 0 0.5 1 1.5 2 2.5 0.0001 VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV303N Rev.D1 Typical Electrical And Thermal Characteristics 5 V GS , GATE-SOURCE VOLTAGE (V) I D = 0.5A VDS = 5V 10V CAPACITANCE (pF) 150 100 4 15V 50 Ciss Coss 3 2 20 10 f = 1 MHz V GS = 0V 1 5 0.1 C rss 0 0.5 V DS 1 2 5 10 25 0 0.4 0.8 1.2 1.6 2 , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 5 3 I D , DRAIN CURRENT (A) 1 IT IM )L ON S( RD 5 1m s 10m s 0m POWER (W) 4 10 1s SINGLE PULSE R θJA =357° C/W T A = 25°C s 3 0.3 10 0.1 s 2 0.03 0.01 0.1 V GS = 4.5V SINGLE PULSE R θJA =357°C/W TA = 25°C 0.2 0.5 1 2 DC 1 5 10 20 40 0 0.001 0.01 0.1 1 10 100 300 VDS , DRAI N-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R θJA (t) = r(t) * R θJA R θJA = 357 °C/W t1 t2 TJ - TA = P * R θJA(t) Duty Cycle, D = t1 /t2 10 100 300 Figure 11. Transient Thermal Response Curve. FDV303N Rev.D1