FDW2520C

FDW2520C November 2000 FDW2520C Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V Applications • DC/DC conversion • Power management • Load switch • Q2: P-Channel –4.4A, 20 V. RDS(ON) = 35 mΩ @ VGS = –4.5 V RDS(ON) = 57 mΩ @ VGS = –2.5 V • High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package • G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 Q1 Q2 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA = 25°C unless otherwise noted Parameter Q1 20 (Note 1a) Q2 –20 ±12 –4.4 –30 1.0 0.6 –55 to +150 Units V V A W °C ±12 6 30 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 °C/W Package Marking and Ordering Information Device Marking 2520C Device FDW2520C Reel Size 13’’ Tape width 12mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDW2520C Rev C(W) FDW2520C Electrical Characteristics Symbol BVDSS ∆BVDSS ===∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VDS = –16 V, VGS = 0 V VGS = +12 V, VDS = 0 V VGS = +12 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = VGS, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = 4.5 V, ID = 6 A VGS = 2.5 V, ID = 5 A VGS = 4.5 V, ID = 6 A, TJ = 125°C VGS = –4.5 V, ID = –4.4 A VGS = –2.5 V, ID = –3.3 A VGS = –4.5 V, ID = –4.4 A, TJ = 125°C VGS = 4.5 V, VDS = 5 V VGS = –4.5 V, VDS = –5 V VDS = 5 V, ID = 6 A VDS = –5 V, ID = –4.4 A Q1: VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2: VDS = –10 V, VGS = 0 V, f = 1.0 MHz Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 20 –20 14 –17 1 –1 +100 +100 0.4 –0.4 1.0 –1.0 –3.3 3.1 14 19 19 28 43 39 1.5 –1.5 V mV/°C µA nA Off Characteristics On Characteristics VGS(th) ∆VGS(th) ===∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V mV/°C Q2 18 28 29 35 57 56 mΩ mΩ ID(on) gFS On-State Drain Current Forward Transconductance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 –30 30 17 1325 1330 358 552 168 153 6 12 11 19 32 60 19 37 14 14 2.6 3.0 3.7 3.9 20 25 40 40 60 100 34 70 20 20 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1: VDS = 10 V, ID = 6 A, VGS = 4.5 V Q2: VDS = –5 V, ID = –4.4 A, VGS = –4.5 V pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Q1: VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Ω Q2: VDD = –10 V, ID = –1 A, VGS = –4.5V, RGEN = 6 Ω ns ns ns ns nC nC nC FDW2520C Rev C(W) FDW2520C Electrical Characteristics (continued) Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A (Note 2) VGS = 0 V, IS = –0.83 A (Note 2) Q1 Q2 Q1 Q2 0.5 –0.7 0.83 –0.83 1.2 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW2520C Rev C(W) FDW2520C Typical Characteristics: Q1 30 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5V 3.0V 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5V 2 1.8 VGS = 2.0V 1.6 1.4 2.5V 1.2 1 0.8 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) 3.0V 3.5V 4.0V 4.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6A VGS = 4.5V 1.4 ID = 3 A 0.05 0.04 TA = 125oC 0.03 1.2 1 0.02 TA = 25oC 0.01 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 30 25 C 125oC 20 15 10 5 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 ID, DRAIN CURRENT (A) TA = -55oC VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2520C Rev C(W) FDW2520C Typical Characteristics: Q1 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 6A 4 15V 3 CAPACITANCE (pF) 10V VDS = 5V 2000 1750 1500 1250 1000 750 500 250 COSS CISS f = 1MHz VGS = 0 V 2 1 CRSS 0 4 8 12 16 20 0 0 2 4 6 8 10 12 14 16 Qg, GATE CHARGE (nC) 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 80 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1s 10s 1 DC VGS = 4.5V SINGLE PULSE RθJA = 208 oC/W TA = 25 C 0.01 0.01 o 1ms 10ms 100ms 60 SINGLE PULSE RθJA = 208 °C/W TA = 25°C 40 0.1 20 0.1 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDW2520C Rev C(W) FDW2520C Typical Characteristics: Q2 30 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -3.0V – ID, DRAIN CURRENT (A) -4.0V 20 1.8 VGS = -2.5V 1.6 -3.0V 1.4 -3.5V 1.2 -4.0V 1 0.8 -4.5V -2.5V 10 -2.0V 0 0 1 2 3 – VDS, DRAIN-SOURCE VOLTAGE (V) 0 5 10 15 20 25 30 -ID, DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.12 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -4.4A VGS = - 4.5V ID = -4.4 A 0.1 0.08 0.06 1.4 1.2 1 TA = 125oC 0.04 0.02 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 13. On-Resistance Variation with Temperature. 30 VDS = - 5V 25 -ID, DRAIN CURRENT (A) 20 15 10 5 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 125o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 25oC -IS, REVERSE DRAIN CURRENT (A) TA = -55oC 10 1 0.1 0.01 0.001 0.0001 VGS = 0V TA = 125oC 25oC -55oC 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2520C Rev C(W) FDW2520C Typical Characteristics: Q2 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = - 4.4A 4 VDS = - 5V 2100 1800 -10V CAPACITANCE (pF) 1500 1200 900 COSS 600 300 CRSS CISS –15V f = 1MHz VGS = 0 V 3 2 1 0 0 3 6 9 12 15 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 100 RDS(ON) LIMIT 10 1s 1 DC 0.1 VGS = 4.5V SINGLE PULSE RθJA = 208 C/W TA = 25 C 0.01 0.1 1 10 100 0 o o Figure 18. Capacitance Characteristics. 50 SINGLE PULSE RθJA = 208°C/W TA = 25°C 1ms 10ms 100ms 10s 40 30 20 10 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RθJA(t) = r(t) + RθJA RθJA =208 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2520C Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G