FDW2521C
July 2008
FDW2521C
Complementary PowerTrench MOSFET
General Description
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
• Q1: N-Channel 5.5 A, 20 V. RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V
Applications
• DC/DC conversion • Power management • Load switch
•
Q2: P-Channel –3.8 A, 20 V. RDS(ON) = 43 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V
•
High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
•
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
Q1
Q2
1 2 3 4
8 7 6 5
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA = 25°C unless otherwise noted
Parameter
Q1
20
(Note 1a)
Q2
–20 ±12 –3.8 –30 1.0 0.6 -55 to +150
Units
V V A W °C
±12 5.5 30
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
°C/W
Package Marking and Ordering Information
Device Marking 2521C Device FDW2521C Reel Size 13’’ Tape width 12mm Quantity 2500 units
2008 Fairchild Semiconductor Corporation
FDW2521C Rev D1(W)
FDW2521C
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VDS = –16 V, VGS = 0 V VGS = +12 V, VDS = 0 V VGS = +12 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = VGS, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = 4.5 V, ID = 5.5 A VGS = 2.5 V, ID = 4.2 A VGS = 4.5 V, ID = 5.5 A, TJ = 125°C VGS = –4.5 V, ID = –3.8 A VGS = –2.5 V, ID = –3.0 A VGS = –4.5 V, ID = –3.8 A, TJ = 125°C VGS = 4.5 V, VDS = 5 V VGS = –4.5 V, VDS = –5 V VDS = 5 V, ID = 5.5 A VDS = –5 V, ID = –3.5 A Q1: VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2: VDS = –10 V, VGS = 0 V, f = 1.0 MHz
Type Min Typ Max Units
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 20 –20 14 –16 1 –1 +100 +100 0.6 –0.6 0.8 –1.0 –3.2 3.0 17 24 23 36 56 49 1.5 –1.5 V mV/°C µA nA
Off Characteristics
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
V mV/°C
Q2
21 35 34 43 70 69
mΩ
ID(on) gFS
On-State Drain Current Forward Transconductance
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
30 –15 26 13.2 1082 1030 277 280 130 120 8 11 8 18 24 34 8 34 12 9.7 2 2.2 3 2.4 20 20 27 32 38 55 16 55 17 16
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q2: VDS = –5 V, ID = –3.8 A,VGS = –4.5 V Q1: VDS = 10 V, ID = 5.5 A, VGS = 4.5 V pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Q1: VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω Q2: VDD = –5 V, ID = –1 A, VGS = –4.5V, RGEN = 6 Ω ns ns ns ns nC nC nC
FDW2521C Rev D1(W)
FDW2521C
Electrical Characteristics (continued)
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type
Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A (Note 2) VGS = 0 V, IS = –0.83 A (Note 2) Q1 Q2 Q1 Q2 0.7 –0.7 0.83 –0.83 1.2 –1.2 A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW2521C Rev D1(W)
FDW2521C
Typical Characteristics: Q1
30 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V 3.0V 2.5V 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V
2.5
2 VGS = 2.0V
1.5
2.5V 3.0V 3.5V 4.0V
1
4.5V
0.5 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.07 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5.5A VGS = 4.5V 1.4
ID = 2.8 A 0.06 0.05 0.04 TA = 0.03 0.02 0.01 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 125oC
1.2
1
0.8
TA = 25oC
0.6 -50 -25 0 25 50 75 100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
30 25 C 125oC 20 15 10 5 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V 25 ID, DRAIN CURRENT (A)
TA = -55oC
VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW2521C Rev D1(W)
FDW2521C
Typical Characteristics: Q1
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5A 4 15V 3 CAPACITANCE (pF) VDS = 5V 10V
1800 1500 CISS 1200 900 600 COSS 300 CRSS 0 0 2 4 6 8 10 12 14 0 4 8 12 16 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V
2
1
0
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1s 1 DC 0.1 VGS = 4.5V SINGLE PULSE RθJA = 250oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 10s 10ms 100ms 1ms 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RθJA = 250°C/W TA = 25°C
30
20
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDW2521C Rev D1(W)
FDW2521C
Typical Characteristics: Q2
30 VGS = -4.5V 24 -4.0V -3.5V -3.0V
1.6
VGS = -2.5V 1.4
18 -2.5V 12 1 -2.0V 1.2 -3.0V -3.5V -4.0V 6 -4.5V
0 0 1 2 3 4 5
0.8 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V)
- ID, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.15
1.6 ID = -3.8A VGS = -4.5V 1.4
ID = -1.9A 0.12
1.2
0.09 TA = 125 C
o
1
0.06 TA = 25 C
o
0.8
0.03
0.6 -50 -25 0 25 50 75 100
o
0 125 150 1.5 2 2.5 3 3.5 4 4.5 5
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with Temperature.
30 VDS = -5.0V 24 125 C 18
o
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
100
TA = -55 C
o
VGS = 0V 25 C
o
10 1 0.1 -55 C
o
TA = 125 C 25 C
o
o
12
0.01 0.001 0.0001 0.4 1.3 2.2 3.1 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
6
0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW2521C Rev D1(W)
FDW2521C
Typical Characteristics: Q2
5 ID = -3.8A 4 -15V 3 VDS = -5V -10V
1800 1500 1200 CISS 900 f = 1MHz VGS = 0 V
2 600 COSS 1 300 CRSS 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 0 5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
100 100µs 20
Figure 18. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT
1ms 10ms 100ms 1s 10s DC
15
SINGLE PULSE RθJA = 250°C/W TA = 25°C
1 VGS = -4.5V SINGLE PULSE RθJA = 250oC/W TA = 25oC 0.01 0.01
10
0.1
5
0.1
1
10
100
0 0.01
0.1
1 t1, TIME (sec)
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RθJA(t) = r(t) + RθJA RθJA = 250 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW2521C Rev D1(W)
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Rev. I35