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FDZ1040L

FDZ1040L

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    UFBGA4

  • 描述:

    SPST

  • 数据手册
  • 价格&库存
FDZ1040L 数据手册
FDZ1040L Integrated Load Switch Features Description  Optimized for Low-Voltage Core ICs in Portable Systems  Very Small Package Dimension: WLCSP 0.8 X 0.8 X 0.5 mm3         Current = 1.2 A, VIN max = 4 V This device is particularly suited for compact power management in portable applications needing 1 V to 4 V input and 1.2 A output current capability. This load switch integrated a level-shifting function that drives a Pchannel power MOSFET in a very small 0.8 X 0.8 X 0.5 mm3 WLCSP package. Current = 2 A, VIN max = 4 V (Pulsed) Applications RDS(on) = 80 mΩ at VON = VIN = 4 V   RDS(on) = 85 mΩ at VON = VIN = 3.6 V RDS(on) = 90 mΩ at VON = VIN = 3 V Load Switch Power Management in Portable Applications RDS(on) = 110 mΩ at VON = 0.7 V, VIN = 1.6 V RDS(on) = 309 mΩ at VON = 0.7 V, VIN = 1 V RoHS Compliant GND VOUT ON Pin 1 VIN Figure 1. Bottom View Figure 2. Top View Ordering Information Part Number Device Mark Ball Pitch Operating Temperature Range Switch Package Packing Method FDZ1040L ZL 0.4 mm -40 to 85°C 80 m, P-Channel MOSFET 0.8 x 0.8 x 0.5 mm3 WLCSP Tape & Reel © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com FDZ1040L — Integrated Load Switch April 2013 FDZ1040L — Integrated Load Switch Typical Application VIN OFF ON VOUT ON GND Figure 3. Typical Application Block Diagram Figure 4. Internal Block Diagram Top View (Bumps Down) Figure 6. Pin Configuration Figure 5. Bottom View (Bumps Up) Pin Descriptions Pin # Name A1 VIN A2 VOUT B1 ON B2 GND Description Supply Input: Input to the load switch Switch Output: Output of the load switch ON/OFF Control Input, Active High Ground © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com 2 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol VIN Parameter Voltage on VIN, VOUT, ON to GND IOUT_C IOUT-Load Current (Continuous) IOUT_P IOUT-Load Current (Pulsed) Max. Unit -0.3 4.2 V 1.2 A 2 A 0.9 W -40 85 °C -65 150 °C 135 °C/W (1a) (1a) PD Power Dissipation at TA = 25°C TA Operating Temperature Range TSTG Min. Storage Temperature RΘJA Thermal Resistance, Junction to Ambient ESD Electrostatic Discharge Capability (1a) Human Body Model, JESD22-A114 8 Charged Device Model, JESD22-C101 2 kV Notes: 1. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RΘJC is guaranteed by design, while RΘJA is determined by the board design. a. 2. 117°C/W when mounted on a 1-inch square pad of 2-oz copper. b. 277°C/W when mounted on a minimum pad of 2-oz copper. Pulse test: pulse width < 300 µs; duty cycle < 2.0%. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit VIN Voltage on VIN Pin 1 4 V VON Voltage on ON Pin 0.7 4.0 V Operating Temperature Range -40 85 °C TA © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com 3 FDZ1040L — Integrated Load Switch Absolute Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VIN Operation Voltage VIL ON Input Logic Low Voltage VIH ON Input Logic High Voltage Test Conditions Min. Typ. Max. Unit 4 V 1 1.6 V ≤ VIN ≤ 4 V 0.35 1 V ≤ VIN ≤ 1.6 V 0.25 1.6 V ≤ VIN ≤ 4 V 1.0 1 V ≤ VIN ≤ 1.6 V 0.7 V V IQ Quiescent Current VIN = VON = 1.8 V, VOUT = Float 1 μA IQ(off) Off Supply Current VIN = 1.8 V, VON = GND, VOUT = Float 1 μA ISD(off) Off Switch Leakage Current VIN = 1.8 V, VON = GND, VOUT = 0 V 100 nA RPD Output Discharge Pull-Down Resistance ION ON Input Leakage RDS(ON) Static Drain-Source On-Resistance Ω 200 VON = VIN or GND 1 VON = VIN = 4 V, IOUT = 300 mA 48 80 VON = VIN = 3.6 V, IOUT = 300 mA 49 85 VON = VIN = 3 V, IOUT = 300 mA 51 90 VON = 0.7 V, VIN = 1.6 V, IOUT = 300 mA 70 110 VON = 0.7 V, VIN = 1 V, IOUT = 300 mA 142 309 VIN = 3.6 V, IOUT = 300 mA, TJ = 85°C 59 120 μA mΩ Switching Characteristics Symbol td(on) tr td(off) tf td(on) tr td(off) tf td(on) tr td(off) tf td(on) tr td(off) tf td(on) tr td(off) tf Parameter Typical Unit Turn-On Delay 22 μs Turn-On Rise Time 23 μs 127 μs Turn-Off Fall Time 298 μs Turn-On Delay 37 μs 35 μs Turn-Off Delay Turn-On Rise Time Test Conditions VIN = 1.6 V, VON = 0.7 V, CL = 1 μF, RL = 500 Ω VIN = 1 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω 161 μs Turn-Off Fall Time 544 μs Turn-On Delay 20 μs Turn-Off Delay 22 μs 136 μs Turn-Off Fall Time 272 μs Turn-On Delay 15 μs Turn-On Rise Time 20 μs 168 μs Turn-Off Fall Time 229 μs Turn-On Delay 13 μs 19 μs 202 μs 214 μs Turn-On Rise Time Turn-Off Delay Turn-Off Delay Turn-On Rise Time Turn-Off Delay VIN = 1.8 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω VIN = 2.5 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω VIN = 3.3 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω Turn-Off Fall Time © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com 4 FDZ1040L — Integrated Load Switch Electrical Characteristics FDZ1040L — Integrated Load Switch Typical Performance Characteristics Figure 7. Shutdown Current vs. Temperature Figure 8. Shutdown Current vs. Supply Voltage Figure 9. Off Supply Current vs. Temperature Figure 10. Off Supply Current vs. Supply Voltage Figure 11. Quiescent Current vs. Temperature Figure 12. Quiescent Current vs. Supply Voltage © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com 5 FDZ1040L — Integrated Load Switch Typical Performance Characteristics Figure 13. Figure 15. RON vs. Temperature Figure 14. ON-Pin Threshold vs. VIN Figure 16. Figure 17. VOUT Turn-On and Turn-Off Delay vs. Temperature at RL=500 Ω © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 RON vs. Supply Voltage VOUT Rise and Fall Time vs. Temperature at RL=500 Ω Figure 18. Forward Bias Safe Operation Area www.fairchildsemi.com 6 FDZ1040L — Integrated Load Switch Typical Performance Characteristics Figure 19. Turn-On Response (VIN = 3.3 V, COUT=1 µF, RL=500 Ω) Figure 20. Turn-Off Response (VIN = 3.3 V, COUT=1 µF, RL=500 Ω) © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com 7 The FDZ1040L is a low-RDS(ON) P-channel load switch packaged in space-saving 0.8x0.8 WLCSP. of 1-4 V. The ON pin, an active HIGH TTL-compatible input that supports input as low as 0.7 V, controls the state of the switch. The core of the device is a 80 mΩ P-channel MOSFET capable of functioning over a wide input operating range Applications Information VIN VIN = 1 -4 V CIN VOUT ON OFF ON GND Figure 21. COUT RL Typical Application Input Capacitor Output Capacitor To reduce device inrush current effect, a 0.1 µF ceramic capacitor, CIN, is recommended close to the VIN pin. A higher value of CIN can be used to further reduce the voltage drop experienced as the switch is turned on into a large capacitive load. FDZ1040L works without an output capacitor. However, if parasitic board inductance forces VOUT below GND when switching off, a 0.1 µF capacitor, COUT, should be placed between the VOUT and GND pins. © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com 8 FDZ1040L — Integrated Load Switch Functional Description FDZ1040L — Integrated Load Switch Physical Dimensions F 0.03 C A E 2X 0.40 B Ø0.20 Cu Pad A1 0.40 D BALL A1 INDEX AREA Ø0.30 Solder Mask 0.03 C 2X TOP VIEW RECOMMENDED LAND PATTERN (NSMD PAD TYPE) 0.06 C 0.292±0.018 0.539 0.461 0.05 C C E 0.208±0.021 SEATING PLANE SIDE VIEWS D NOTES: A. NO JEDEC REGISTRATION APPLIES. 0.005 B. DIMENSIONS ARE IN MILLIMETERS. C A B Ø0.260±0.020 4X 0.40 B A 0.40 C. DIMENSIONS AND TOLERANCE PER ASME Y14.5M, 1994. (Y)±0.018 D. DATUM C IS DEFINED BY THE SPHERICAL CROWNS OF THE BALLS. F 1 2 E. PACKAGE NOMINAL HEIGHT IS 500 MICRONS ±39 MICRONS (461-539 MICRONS). (X)±0.018 F. FOR DIMENSIONS D, E, X, AND Y SEE PRODUCT DATASHEET. BOTTOM VIEW G. DRAWING FILNAME: MKT-UC004AFrev1. Figure 22. 4-Ball, WLCSP, 2 X 2 Array, 0.4 mm Pitch, 250 µm Ball Product-Specific Dimensions Product D E X Y FDZ1040L 0.8 ±0.03 mm 0.8 ±0.03 mm 0.21 mm 0.21 mm Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com 9 FDZ1040L — Integrated Load Switch © 2010 Fairchild Semiconductor Corporation FDZ1040L • Rev. D1 www.fairchildsemi.com 10
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