FDZ191P_0612

FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET December 2006 FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET -20V, -1A, 85mΩ Features General Description Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Ultra-thin package: less than 0.65 mm height when mounted to PCB RoHS Compliant tm Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Application Battery management Load switch Battery protection PIN 1 S S D D S G S PIN 1 G BOTTOM TOP D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -20 ±8 -3 -15 1.5 0.9 -55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 83 140 °C/W Package Marking and Ordering Information Device Marking 1 Device FDZ191P Package WL-CSP Reel Size 7’’ Tape Width 8mm Quantity 5000 units ©2006 Fairchild Semiconductor Corporation FDZ191P Rev.F1 (W) 1 www.fairchildsemi.com FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250μA, VGS = 0V ID = -250μA, referenced to 25°C VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V -20 -12 -1 ±100 V mV/°C μA nA On Characteristics VGS(th) ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250μA ID = -250μA, referenced to 25°C VGS = -4.5V, ID = -1A rDS(on) Drain to Source On Resistance VGS = -2.5V, ID = -1A VGS = -1.5V, ID = -1A VGS = -4.5V, ID = -1A TJ = 125°C ID(on) gFS On to State Drain Current Forward Transconductance VGS = -4.5V, VDS = -5V VDS = -5V, ID = -1A -10 7 -0.4 -0.6 2 67 85 140 87 85 123 200 123 A S mΩ -1.5 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz 800 155 90 9 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VDD = -10V ID = -1A VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6Ω 11 10 50 30 9 1 2 20 20 80 48 13 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.1A (Note 2) -0.7 21 5 -1.1 -1.2 A V ns nC IF = -1A, di/dt = 100A/μs Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB is defined for reference. For RθJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a. 83°C/W when mounted on a 1 in2 pad of 2 oz copper,1.5” X 1.5” X 0.062” thick PCB b. 140°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDZ191P Rev.F1 (W) 2 www.fairchildsemi.com FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 16 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 1.6 1.4 1.2 1.0 VGS = -4.5V VGS = -3.5V VGS = -1.5V PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 14 -ID, DRAIN CURRENT (A) 12 10 8 6 4 2 0 0.0 0.5 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = -4.5V VGS = -3.5V VGS = -2.5V VGS = -2.0V VGS = -2.0V VGS = -2.5V VGS = -1.5V 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT(A) 12 14 16 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 240 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 ID = -1A VGS = -4.5V ID = - 0.5A PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 200 160 120 80 TJ = 25oC TJ = 125oC 40 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 3. Normalized On Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 60 15 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 10 1 VGS = 0V -ID, DRAIN CURRENT (A) 12 VDD = -5V 9 6 TJ = 125oC TJ = 125oC 0.1 0.01 1E-3 1E-4 0.0 TJ = 25oC 3 0 0.5 TJ = 25oC TJ = -55oC TJ = -55oC 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDZ191P Rev.F1 (W) 3 www.fairchildsemi.com FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -1A 2000 4 3 2 1 0 0 2 1000 CAPACITANCE (pF) VDD = -5V VDD = -10V VDD = -15V Ciss Coss 100 50 0.1 f = 1MHz VGS = 0V Crss 4 6 8 10 12 Qg, GATE CHARGE(nC) 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 -ID, DRAIN CURRENT (A) 4.0 -ID, DRAIN CURRENT (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 RθJA = 83 C/W o 10 100us 1ms VGS = -4.5V 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10ms 100ms 1s 10s DC VGS = - 2.5V 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 140 C/W TA = 25OC o 50 75 100 o 125 150 0.01 0.1 1 10 80 TA, CASE TEMPERATURE ( C) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Maximum Continuous Drain Current vs Ambient Temperature 50 P(PK), PEAK TRANSIENT POWER (W) VGS = -10V Figure 10. Forward Bias Safe Operating Area FOR TEMPERATURES ABOVE 25oC DERATE PEAK 10 CURRENT AS FOLLOWS: I = I25 150 – T A ----------------------125 TA = 25oC 1 0.5 -3 10 SINGLE PULSE 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 2 10 3 Figure 11. Single Pulse Maximum Power Dissipation FDZ191P Rev.F1 (W) 4 www.fairchildsemi.com FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 0 1 2 3 0.01 -3 10 10 -2 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDZ191P Rev.F1 (W) 5 www.fairchildsemi.com FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET FDZ191P Rev.F1 (W) 6 www.fairchildsemi.com FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I22 FDZ191P Rev. F1 (W) 7 www.fairchildsemi.com