FDZ202P_04

FDZ202P January 2004 FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • –5.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V RDS(ON) = 75 mΩ @ VGS = –2.5 V • Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Ultra-low Qg x RDS(ON) figure-of-merit • High power and current handling capability Applications • Battery management • Load switch • Battery protection D S G D S S D D S S D Pin 1 S F202 G Pin 1 D Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings –20 ±12 –5.5 –20 2 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 64 8 0.7 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking 202P Device FDZ202P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDZ202P Rev. D2 (W) FDZ202P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = –12 V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min –20 Typ Max Units V mV/°C –1 –100 100 µA nA nA V mV/°C mΩ S pF pF pF Off Characteristics –17 On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS= –4.5 V, ID= –5.5 A VGS= –2.5 V, ID= –4.0 A VGS= –4.5 V, ID= –5.5 A, TJ=125°C VDS = –5 V, ID = –5.5 A VDS = –10 V, f = 1.0 MHz V G S = 0 V, –0.6 –0.9 3 37 57 50 15 884 258 103 –1.5 45 75 65 Dynamic Characteristics Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –6 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 12 9 36 24 22 18 58 38 13 ns ns ns ns nC nC nC VDS = –10 V, VGS = –4.5 V ID = –5.5 A, 9 2 3 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.7 A Voltage Diode Reverse Recovery Time IF = –5.5 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge (Note 2) –0.76 25 26 –1.7 –1.2 A V nS nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 64°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 128°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ202P Rev D2 (W) FDZ202P Dimensional Outline and Pad Layout FDZ202P Rev D2 (W) FDZ202P Typical Characteristics 20 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -3.0V -2.5V 1.8 VGS = -2.5V 1.6 1.4 1.2 1 0.8 -ID, DRAIN CURRENT (A) 15 10 -3.0V -3.5V -4.0V -4.5V -2.0V 5 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 5 10 -ID, DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -5.5A VGS = -4.5V 1.4 ID = -2.8 A 0.14 1.2 0.1 1 TA = 125oC 0.8 0.06 TA = 25oC 0.02 0.6 -50 -25 0 25 50 75 100 o 125 150 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 15 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V -ID, DRAIN CURRENT (A) -IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25oC 125oC VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 10 5 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ202P Rev D2 (W) FDZ202P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 1600 ID = -5.5A VDS = -5V -10V 1200 CISS 800 COSS 400 CRSS f = 1MHz VGS = 0 V 4 -15V 3 2 1 CAPACITANCE (pF) 0 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT 1ms 10ms 100ms ID, DRAIN CURRENT (A) 10 40 S IN G LE P U LS E R π JA = 1 28°C /W T A = 2 5°C 30 1 DC 0.1 VGS = -4.5V SINGLE PULSE R JA = 128oC/W TA = 25oC 0.01 0.1 1 1s 20 10 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t 1 , TIM E (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) + RθJA RθJA = 128 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 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Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7