FDZ208P

FDZ208P P-Channel 30 Volt PowerTrench® BGA MOSFET February 2006 FDZ208P P-Channel 30 Volt PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low rDS(on) Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on). Features • –12.5 A, –30 V. rDS(on) = 10.5 mΩ @ VGS = –10 V rDS(on) = 16.5 mΩ @ VGS = –4.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.8 mm height when mounted to PCB • 3.5 x 4 mm2 footprint • High power and current handling capability Applications • Battery management • Load switch • Battery protection Gate G S Index slot D Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation (Steady State) Parameter (Note 1a) (Note 1a) (Note 1a) Operating and Storage Junction Temperature Range –30 ± 25 –12.5 –60 2.2 1.0 –55 to +150 Ratings Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 °C/W Package Marking and Ordering Information Device Marking 208P Device FDZ208P Reel Size 13’’ Tape width 8mm Quantity 4000 units ©2006 Fairchild Semiconductor Corporation FDZ208P Rev D (W) FDZ208P P-Channel 30 Volt PowerTrench® BGA MOSFET Electrical Characteristics Symbol BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = –25 V, VGS = 25 V, VGS = 0 V VDS = 0 V VDS = 0 V Min –30 Typ Max Units V mV/°C –1 –100 100 µA nA nA Off Characteristics –20 On Characteristics VGS(th) ∆VGS(th) ∆T J RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Notes: 1. Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –12.5 A VGS = –4.5 V, ID = –9.5 A VGS = –10 V,ID = –12.5A,TJ=125°C VDS = –10 V, ID = –12.5 A VDS = –15 V, f = 1.0 MHz V GS = 0 V , –1 –1.5 5 9 13 11.7 40 2409 614 300 13 11 74 42 25 5 10 –3 V mV/°C mΩ S pF pF pF 10.5 16.5 15 Dynamic Characteristics Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –15 V, VGS = –10 V, VDS = –15 V, VGS = –5 V ID = –1 A, RGEN = 6 Ω ID = –12.5 A, 24 21 119 68 35 ns ns ns ns nC nC nC A V ns nC Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = –1.8 A (Note 2) –1.8 –0.7 29.5 30.2 –1.2 IF = -12.5 A, di/dt = 100 A/µs the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' board design. s junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the a) 56°C/W when 2 mounted on a 1in pad of 2 oz copper b) 119°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ208P Rev D (W) FDZ208P P-Channel 30 Volt PowerTrench® BGA MOSFET Dimensional Outline and Pad Layout FDZ208P Rev D (W) FDZ208P P-Channel 30 Volt PowerTrench® BGA MOSFET Typical Characteristics 60 VGS =-10V -6.0V -4.5V 2.6 NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 -ID, DRAIN CURRENT (A) 45 60 -ID, DRAIN CURRENT (A) 45 VGS = -3.5V 30 -3.0V -4.0V -4.5V -5.0V -6.0V -8.0V -10V 15 0 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.045 ID = -12.5A rDS(on), ON-RESISTANCE (OHM) 0.035 1.6 NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -12.5A VGS = -10V 1.4 1.2 0.025 TA = 125oC 0.015 TA = 25oC 0.005 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) 1 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 60 -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V VDS = -5V -ID, DRAIN CURRENT (A) 45 TA = -55 C o o 25 C 125 C o 10 1 0.1 0.01 0.001 0.0001 TA = 125 C o o 30 25 C -55 C o 15 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ208P Rev D (W) FDZ208P P-Channel 30 Volt PowerTrench® BGA MOSFET Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -12.5A 8 -20V VDS = -10V -15V 3500 3000 CAPACITANCE (pF) 2500 2000 1500 1000 500 Coss f = 1MHz VGS = 0 V Ciss 6 4 2 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) Crss 0 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) rDS(on) LIMIT 1ms 10ms 100ms 40 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 10 1s 10s DC 30 SINGLE PULSE RθJA = 119° C/W TA = 25° C 1 VGS = -10V SINGLE PULSE RθJA = 119oC/W TA = 25oC 20 0.1 10 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RθJA(t) = r(t) * RθJA RθJA = 119 ° C/W P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 t1 0.01 0.01 0.001 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ208P Rev D (W)