FDZ291P_06

FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • –4.6 A, –20 V RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 60 mΩ @ VGS = –2.5 V RDS(ON) = 160 mΩ @ VGS = –1.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.85 mm height when mounted to PCB • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Ultra-low Qg x RDS(ON) figure-of-merit • High power and current handling capability. S Applications • Battery management • Load switch • Battery protection GATE G D Bottom Top TA=25 C unless otherwise noted o Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –4.6 –10 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1a) 72 2 °C/W Package Marking and Ordering Information Device Marking D Device FDZ291P Reel Size 13” Tape width 8mm Quantity 10000 units ©2006 Fairchild Semiconductor Corporation FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Electrical Characteristics T Symbol BVDSS ∆BVDSS ∆T J IDSS IGSS VGS(th) ∆VGS(th) ∆T J RDS(on) A = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage. (Note 2) Test Conditions VGS = 0 V, ID = –250 µA Min Typ Max Units –20 –12 –1 ±100 –0.4 –0.7 2 31 43 85 42 –10 16 1010 160 80 –1.0 V mV/°C µA nA V mV/°C 40 60 160 55 mΩ Off Characteristics ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = ±8 V, VGS = 0 V VDS = 0 V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –4.6 A VGS = –2.5 V, ID = –3.6 A VGS = –1.5 V, ID = –1.0 A VGS = –4.5 V, ID = –4.6 A, TJ=125°C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –4.6 A ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) A S pF pF pF 19 18 58 29 13 ns ns ns ns nC nC nC –1.4 –0.7 17 5 –1.2 A V ns nC Dynamic Characteristics VDS = –10 V, f = 1.0 MHz V GS = 0 V , Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 11 9 36 16 VDS = –10V, VGS = –4.5 V ID = –4.6 A, 9 1.6 1.9 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0V, IS = –1.4 A (Note 2) Voltage Diode Reverse Recovery Time IF = –4.6 A, dIF/dt = 100A/µs Diode Reverse Recovery Charge Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' board design. s a) 72°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 10 3 VGS = -4.5V -3.5V -2.5V -3.0V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 2.2 1.8 1.4 1 0.6 0 VGS = -1.5V -ID, DRAIN CURRENT (A) 8 6 -1.5V 4 -2.0V -2.5V -3.0V -3.5V -4.5V 2 0 0 0.25 0.5 0.75 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1.25 1.5 2 4 6 -ID, DRAIN CURRENT (A) 8 10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 ID = -4.6A VGS = -4.5V ID = -2.3 A 0.12 0.1 0.08 TA = 125oC 0.06 T A = 25o C 0.04 0.02 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 10 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V -ID, DRAIN CURRENT (A) 8 10 1 0.1 0.01 0.001 0.0001 6 4 TA = 125oC 25oC -55oC TA = 125oC -55oC 2 25oC 0 0.5 0.75 1 1.25 1.5 1.75 -VGS, GATE TO SOURCE VOLTAGE (V) 2 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -4.6A 4 VDS = -5V 3 -10V 2 -15V 1500 f = 1MHz VGS = 0 V Ciss 1200 CAPACITANCE (pF) 900 600 Coss 1 300 Crss 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 0 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 20 Figure 8. Capacitance Characteristics. SINGLE PULSE RθJA = 157°C/W TA = 25°C -ID, DRAIN CURRENT (A) 10 1ms 10ms 100µs 15 1 10s DC VGS = -4.5V SINGLE PULSE RθJA = 157oC/W TA = 25oC 1s 100ms 10 0.1 5 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJA(t) = r(t) * RθJA RθJA = 157 ° C/W P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 t1 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ291P Rev. C2 (W) FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET Dimensional Pad and Layout F DZ291P Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production