FDZ293P

FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET December 2004 FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Features I –4.6 A, –20 V RDS(ON) = 46 mΩ @ VGS = –4.5 V RDS(ON) = 72 mΩ @ VGS = –2.5 V I Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 I Ultra-thin package: less than 0.85 mm height when mounted to PCB I Outstanding thermal transfer characteristics: 4 times better than SSOT-6 I Ultra-low Qg x RDS(ON) figure-of-merit I High power and current handling capability. Applications I Battery management I Load switch I Battery protection General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). S GATE G D Bottom Top ©2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDZ293P Rev. C FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA = 25°C unless otherwise noted Parameter Ratings –20 ±12 (Note 1a) Units V V A –4.6 –10 Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) 1.7 –55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 °C/W Package Marking and Ordering Information Device Marking B Device FDZ293P Reel Size 7” Tape width 8mm Quantity 3000 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Off Characteristics BVDSS ∆BVDSS ∆ TJ IDSS IGSS VGS(th) ∆VGS(th) ∆ TJ RDS(on) Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage. VGS = 0V, ID = –250µA ID = –250µA, Referenced to 25°C VDS = –16V, VGS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = –250µA ID = –250µA, Referenced to 25°C VGS = –4.5V, ID = –4.6A, VGS = –2.5V, ID = –3.6A, VGS = –4.5V, ID = –4.6A, TJ = 125°C VGS = –4.5V, VDS = –5V VDS = –5V, ID = –4.6A VDS = –10V, VGS = 0V, f = 1.0MHz –10 13 –0.6 –0.8 3 36 58 47 46 72 65 –20 –13 –1 ±100 –1.5 V mV/°C µA nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance V mV/°C mΩ ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0MHz VDD = –10V, ID = –1A, VGS = –4.5V, RGEN = 6Ω 754 167 92 6 pF pF pF Ω 20 20 35 31 11 ns ns ns ns nC nC nC Switching Characteristics (Note 2) Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = –10V, ID = –4.6A, VGS = –4.5V 11 10 22 17 7.5 1.5 2.0 2 FDZ293P Rev. C www.fairchildsemi.com FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Electrical Characteristics TA = 25°C unless otherwise noted (Continued) Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0V, IS = –1.4A Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = –4.6A, diF/dt = 100A/µs (Note 2) –1.4 –0.7 17 5 A –1.2 IS V nS nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 72˚C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157˚C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3 FDZ293P Rev. C www.fairchildsemi.com FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 10 2.6 -3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -ID, DRAIN CURRENT (A) 8 VGS = -2.0V -2.5V 6 -2.0V 4 -2.5V -3.0V -3.5V -4.5V 2 0 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 -ID, DRAIN CURRENT (A) 6 8 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 ID = -4.6A VGS = -4.5V ID = -2.3 A 0.15 0.12 TA = 125°C 0.09 0.06 TA = 25°C -25 0 25 50 75 100 125 150 0.03 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( °C) Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 8 VGS = 0V 1 TA = 125°C 0.1 25°C 0.01 -55°C 0.001 6 4 TA = 125°C 2 25°C -55°C 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDZ293P Rev. C www.fairchildsemi.com FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 1200 ID = -4.6A VDS = -5V -10V CAPACITANCE (pF) f = 1MHz VGS = 0 V 1000 CISS 800 600 400 COSS 200 CRSS 0 0 2 4 6 8 10 4 -15V 3 2 1 0 Qg, GATE CHARGE (nC) 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 20 -ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 100µs 1ms 10ms 100ms 1s 10s DC SINGLE PULSE RθJA = 157°C/W TA = 25°C 15 1 VGS = -4.5V SINGLE PULSE RθJA = 157°C/W TA = 25°C 0.01 0.1 1 10 0.1 5 10 100 0 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJA(t) = r(t) * RθJA RθJA = 157° C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDZ293P Rev. C www.fairchildsemi.com FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Dimensional Pad and Layout A 1.50±0.10 INDEX SLOT 1 A PKG C L 1.70 1.50 BALL C L C L C L GATE B Ø0.25 A B C 0.50 0.50 0.038±0.025 TOP VIEW LAND PATTERN RECOMMENDATION 1.00 DRAIN 1.00 1 2 3 SOUCE 0.85 MAX STUD, Ø0.30±0.02 Ø0.050 C A B C SEATING PLANE 0.10 C FRONT VIEW PKG C L 0.04 GATE (0.28) (0.60) 0.21 0.16 0.31 0.26 66° SOLDER BALL SIDE VIEW INDEX SLOT (HIDDEN) B A 1 0.50 1.00 BOTTOM VIEW 2 3 BALL, Ø0.30±0.02 Ø0.050 A B 0.50 C 1.00 C L BALL C L NOTES: UNLESS OTHERWISE SPECIFIED A) B) C) ALL DIMENSIONS ARE IN MILLIMETERS. NO JEDEC REGISTRATION REFERENCE AS OF SEPTEMBER 2003. BALL/STUD CONFIGURATION TABLE TERMINAL ID C1,C2,C3 A1 A2,A3,B1,B2,B3 DESIGNATION TERMINAL TYPE DRAIN COPPER STUD GATE BALL SOURCE 6 FDZ293P Rev. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14