FDZ298N

FDZ298N February 2004 FDZ298N N-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • 6 A, 20 V RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Ultra-low Qg x RDS(ON) figure-of-merit • High power and current handling capability. Applications • Battery management • Battery protection D D S S D P in 1 D C S G S S G Bottom Top TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 6 10 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 °C/W Package Marking and Ordering Information Device Marking C Device FDZ298N Reel Size 7” Tape width 8mm Quantity 3000 units ©2004 Fairchild Semiconductor Corporation FDZ298N Rev B1 (W) FDZ298N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25° unless otherwise noted C Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage. (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min Typ 20 12 Max Units V mV/°C Off Characteristics ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = ±12 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 µA 0.6 1 ±100 0.9 –0.3 23 28 28 10 24 680 165 90 1.9 8 7 14 6 16 14 26 12 10 27 39 42 1.5 µA nA V mV/°C mΩ On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) ID = 250 µA,Referenced to 25°C VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 4.5 V, VDS = 5 V, ID = 6 A, ID = 5A, ID = 6 A, TJ=125°C VDS = 5 V ID = 6 A ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr A S pF pF pF Ω ns ns ns ns nC nC nC 1.4 A V nS nC Dynamic Characteristics VDS = 10 V, f = 1.0 MHz V GS = 0 V, VGS = 15 mV, f = 1.0 MHz VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = 10V, VGS = 4.5 V ID = 6 A, 7 1.4 1.8 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.4 A (Note 2) 0.7 14 3 1.2 IF = 6 A, diF/dt = 100 A/µs Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' board design. s the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the a) 72° C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157° C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ298N Rev B1 (W) FDZ298N Typical Characteristics 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=4.5V 2.25 2.0V VGS = 2.0V 2 1.75 1.5 1.25 1 0.75 ID, DRAIN CURRENT (A) 8 3.5V 6 2.5V 4 2.5V 3.0V 3.5V 4.0V 4.5V 2 1.5V 0 0 0.25 0.5 0.75 1 1.25 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.075 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6.0A VGS = 10V ID =3.0A 0.065 0.055 0.045 0.035 0.025 0.015 1.4 1.2 1 TA = 125 C o 0.8 TA = 25 C o 0.6 -50 -25 0 25 50 75 o 100 125 150 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 IS, REVERSE DRAIN CURRENT (A) VDS = 5V I D, DRAIN CURRENT (A) 8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 o 6 TA = 125 C 25 C o o TA = 125 C 25 C -55 C o o 4 2 -55 C 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) o 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ298N Rev B1 (W) FDZ298N Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.0A 8 CAPACITANCE (pF) VDS = 5V 6 15V 10V 960 f = 1MHz VGS = 0 V 640 Ciss 4 320 Coss 2 Crss 0 0 3 6 9 12 15 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT I D, DRAIN CURRENT (A) 10 100ms 1 DC 0.1 VGS = 4.5V SINGLE PULSE RθJA = 157 C/W TA = 25 C 0.01 0.01 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 o o Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE RθJA = 157°C/W TA = 25°C 1ms 10ms 1s 40 30 10s 20 10 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 P(pk) t1 t2 TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2 RqJA(t) = r(t) * RqJA RqJA = 157 °C/W 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ298N Rev B1 (W) FDZ298N Dimensional Outline and Pad Layout FDZ298N Rev B1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7