FDZ372NZ
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
20 V, 4.7 A, 50 mΩ
Features
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ372NZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A
Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A
Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A
Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A
Occupies only 1.0 mm2 of PCB area. Less than 30% of the
area of 2x2 BGA
Applications
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
Battery management
Load switch
HBM ESD protection level > 3200V (Note3)
Battery protection
RoHS Compliant
Pin 1
S
S
D
G
Pin 1
TOP
BOTTOM
WL-CSP 1.0X1.0 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
20
Units
V
±8
V
4.7
12
Power Dissipation
TA = 25 °C
(Note 1a)
1.7
Power Dissipation
TA = 25 °C
(Note 1b)
0.5
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
75
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
L
Device
FDZ372NZ
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
Package
WL-CSP 1.0x1.0 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
March 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±10
µA
1
V
20
V
18
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
0.4
0.7
-3
mV/°C
VGS = 4.5 V, ID = 2 A
40
50
VGS = 2.5 V, ID = 2 A
45
60
VGS = 1.8 V, ID = 1 A
53
72
VGS = 1.5 V, ID = 1 A
63
93
VGS = 4.5V, ID = 2 A, TJ = 125°C
57
81
VDS = 5 V, ID = 4.7 A
22
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
515
685
pF
85
115
pF
65
100
pF
6.2
12
ns
3.6
10
ns
26
42
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 10 V, ID = 4.7 A
VGS = 4.5 V, RGEN = 6 Ω
VGS = 4.5 V, VDD = 10 V
ID = 4.7 A
5.6
12
ns
7
9.8
nC
0.8
nC
1.6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.4 A
(Note 2)
IF = 4.7 A, di/dt = 100 A/µs
0.7
1.2
V
11
20
ns
2.6
10
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 75 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
2
www.fairchildsemi.com
FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
2.0
VGS = 4.5 V
VGS = 3 V
VGS = 2.5 V
VGS = 2 V
8
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
12
VGS = 1.8 V
VGS = 1.5 V
4
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
VGS = 1.5 V
VGS = 2 V
1.5
VGS = 1.8 V
1.0
VGS = 2.5 V
0
1.5
4
12
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
200
ID = 2 A
VGS = 4.5 V
1.4
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 2 A
150
rDS(on), DRAIN TO
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
8
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
1.2
1.0
0.8
0.6
-75
-50
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
8
150 oC
TJ = 25 oC
4
TJ = -55 oC
1.5
20
10
1.5
3.0
4.5
VGS = 0 V
1
TJ = 150 oC
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
2.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
TJ = 25 oC
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
1.0
50
VGS, GATE TO SOURCE VOLTAGE (V)
12
TJ =
TJ = 125 oC
0
0.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
0
0.5
VGS = 4.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 3 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
ID = 4.7 A
VDD = 8 V
Ciss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
3.0
VDD = 10 V
VDD = 12 V
1.5
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.01
0.0
0
2
4
6
8
Figure 7. Gate Charge Characteristics
20
-1
10
VDS = 0 V
-2
10
ID, DRAIN CURRENT (A)
Ig, GATE LEAKAGE CURRENT (A)
10 20
1
Figure 8. Capacitance vs Drain
to Source Voltage
10
-3
10
-4
10
TJ = 125 oC
-5
10
-6
10
-7
10
TJ = 25 oC
-8
10
100 us
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.01
-10
3
6
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
1s
10 s
DC
RθJA = 260 oC/W
-9
0
1 ms
1
10
10
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
9
12
15
TA = 25 oC
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe Operating Area
Figure 9. Gate Leakage Current vs
Gate to Source Voltage
P(PK), PEAK TRANSIENT POWER (W)
200
SINGLE PULSE
100
o
RθJA = 260 C/W
o
TA = 25 C
10
1
0.4
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
4
www.fairchildsemi.com
FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 260 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
5
www.fairchildsemi.com
FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
www.fairchildsemi.com
FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
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