FEP16AT

FEP16AT - FEP16JT PIN 1 + CASE PIN 2 FEP16AT - FEP16JT Features • • • • Low forward voltage drop. High surge current capacity. 1 PIN 3 Positive CT PIN 1 PIN 3 Negative CT Suffix "A" 2 3 CASE PIN 2 High current capability. High reliability. PIN 1 AC CASE PIN 2 TO-220AB PIN 3 Doubler Suffix "D" Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter 16AT 16BT 16CT Value 16DT 16FT 16GT 16HT 16JT Units 400 500 600 V A A °C °C Tstg TJ Maximum Repetitive Reverse Voltage Average Rectified Forward Current, .375 " lead length @ TA = 100°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 50 100 150 200 300 16 200 -55 to +150 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol PD RθJA RθJL Parameter Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Value 8.33 15 2.2 Units W °C/W °C/W Electrical Characteristics Symbol VF trr IR TA = 25°C unless otherwise noted Parameter 16AT 16BT Device 16CT 16DT 16FT 16GT 16HT 16JT Units 1.5 50 V ns µA µA 60 pF CT Forward Voltage @ 8.0A Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 100°C Total Capacitance VR = 4.0. f = 1.0 MHz 0.95 35 10 500 85 1.3 2001 Fairchild Semiconductor Corporation FEP16AT - FEP16JT, Rev. C FEP16AT - FEP16JT Typical Characteristics Average Rectified Forward Current, IF [A] Peak Forward Surge Current, IFSM [A] 20 200 16 160 12 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS 120 8 80 4 40 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 175 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Figure 1. Forward Current Derating Curve 100 FEP16AT-FEP16DT Figure 2. Non-Repetitive Surge Current Reverse Characteristics 1000 Forward Current, IF [A] Reverse Current, IR [mA] 10 FEP16FT-FEP16JT 100 T A = 100 ºC 1 10 0.1 TA = 2 5 º C Pulse Width = 300µs 2% Duty Cycle 1 T A = 25º C 0.01 0.4 0.1 0.6 0.8 1 1.2 1.4 Forward Voltage, VF [V] 1.6 1.8 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 3. Forward Voltage Characteristics 100 Total Capacitance, CT [pF] 90 80 70 60 50 FEP16FT-FEP16JT 40 Figure 4. Reverse Current vs Reverse Voltage FEP16AT-FEP16DT 1 2 5 10 20 Reverse Voltage, VR [V] 50 100 50Ω NONINDUCTIVE 50Ω NONINDUCTIVE Figure 5. Total Capacitance +0.5A (-) trr DUT 50V (approx) 50Ω NONINDUCTIVE Pulse Generator (Note 2) (+) OSCILLOSCOPE (Note 1) 0 -0.25A -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation FEP16AT - FEP16JT, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4