FFAF10U20DN

FFAF10U20DN FFAF10U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 200 10 100 - 65 to +150 Units V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Value 4.0 Units °C/W Electrical Characteristics (per diode) TC=25 °C unless otherwise noted Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =10A, di/dt = 200A/µs) Avalanche Energy Min. TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C 0.5 Typ. Max. 1.2 1.0 µA 10 100 35 2.5 45 ns A nC mJ Units V IRM * trr Irr Qrr WAVL * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2001 Fairchild Semiconductor Corporation Rev. A, December 2001 FFAF10U20DN Typical Characteristics 50 1000 [µA] 100 Forward Current , IF [A] 10 TC = 100 C T C = 25 C o o TC = 100 C 10 o Reverse Current , I R 1 TC = 25 C 0.1 o 1 0.01 0.1 0.0 0.001 0.5 1.0 1.5 2.0 0 50 100 150 200 Forward Voltage , VF [V] Reverse Voltage , VR [V] Figure 1. Typical Forward Voltage Drop vs. Forward Current 400 40 Figure 2. Typical Reverse Current vs. Reverse Voltage Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 286 pF IF = 10A o Tc = 25 C 35 Capacitance , Cj [pF] 300 200 30 100 25 0.1 1 10 100 20 100 500 Reverse Voltage , VR [V] di/dt [A/µs] Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time vs. di/dt 16 14 12 10 Reverse Recovery Current , rr [A] I 5 IF = 10A o T C = 25 C 4 Average Forward Current , I F(AV) [A] 6 DC 3 8 6 4 2 0 60 2 1 0 100 500 80 100 120 o 140 160 di/dt [A/µ s] Case Temperature , TC [ C] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2001 Fairchild Semiconductor Corporation Figure 6. Forward Current Derating Curve Rev. A, December 2001 FFAF10U20DN Package Dimensions TO-3PF 5.50 ±0.20 4.50 ±0.20 15.50 ±0.20 ø3.60 ±0.20 3.00 ±0.20 (1.50) 10.00 ±0.20 10 ° 26.50 ±0.20 23.00 ±0.20 16.50 ±0.20 14.50 ±0.20 0.85 ±0.03 16.50 ±0.20 2.00 ±0.20 14.80 ±0.20 2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 –0.10 +0.20 2.00 ±0.20 2.50 ±0.20 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.90 –0.10 +0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 1.50 ±0.20 Dimensions in Millimeters Rev. A, December 2001 ©2001 Fairchild Semiconductor Corporation 22.00 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H4