FFB20UP30DN

FFB20UP30DN Ultrafast Recovery Power Rectifier March 2006 FFB20UP30DN Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 45ns(@IF=10A) • High Reverse Voltage : VRRM = 300V • Avalanche Energy Rated • Planar Construction Applications • General purpose • Switching Mode Power Supply • Free-wheeling diode for motor application • Power switching circuits 1 1 2 3 TO-263AB/D2-PAK 1. Anode 2. Cathode 3. Anode 1.Anode 2.Cathode 3.Anode Absolute Maximum Ratings Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG TC = 25°C unless otherwise noted Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Rating for each diode IF(AV)/2 @ TC = 130°C Value 300 300 300 20 180 - 65 to +150 Units V V V A A °C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Max 2.0 Units °C/W Package Marking and Ordering Information Device Marking F20UP30DN Device FFB20UP30DNTM Package TO-263AB/D2-PAK Reel Size 13” Dia Tape Width - Quantity 800 ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFB20UP30DN Rev. A FFB20UP30DN Ultrafast Recovery Power Rectifier Electrical Characteristics Symbol VFM IRM trr * (per diode) TC = 25°C unless otherwise noted Parameter IF = 10A IF = 10A VR = 300V VR = 300V IF =0.5A, Irr=1A, VCC = 30V IF =1A, di/dt = 100A/µs, VCC = 30V IF =10A, di/dt = 200A/µs, VCC = 195V IF =10A, di/dt = 200A/µs, VCC = 195V TC = 25 °C TC = 150 °C TC = 25 °C TC = 150 °C TC = 25 °C TC = 25 °C TC = 25 °C TC = 25 °C TC = 25 °C TC = 25 °C Min. 20 Typ. 11 13 20 - Max. 1.3 1.2 1 500 30 35 45 - Units V V µA µA ns ns ns ns ns nC mJ * ta tb Qrr WAVL Avalanche Energy (L = 20mH) * Pulse Test: Pulse Width=300µs, Duty Cycle=2% Test Circuit and Waveforms FFB20UP30DN Rev. A 2 www.fairchildsemi.com FFB20UP30DN Ultrafast Recovery Power Rectifier Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop 20 10 10 Figure 2. Typical Reverse Current Reverse Current , I R [µA] Forward Current , IF [A] 1 TC = 100 C 1 o TC = 100 C 0.1 o TC = 25 C o TC = 25 C 0.01 o 0.1 0.0 0.5 1.0 1.5 2.0 0.001 0 50 100 150 200 250 300 Forward Voltage , VF [V] Reverse Voltage , VR [V] Figure 3. Typical Junction Capacitance 400 Figure 4. Typical Reverse Recovery Time 36 Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 197. 2 pF IF = 10A Tc = 25 C 32 o Capacitance , Cj [pF] 100 28 10 0.1 1 10 100 24 100 200 300 400 500 Reverse Voltage , VR [V] di/dt [A/µs] Figure 5. Typical Reverse Recovery Current 5 Figure 6. Forward Current Deration Curve Average Rectified Forward Current, IF(AV) [A] 14 12 10 8 6 4 2 0 100 Reverse Recovery Current , Irr [A] IF = 10A TC = 25 C o 4 3 DC 2 1 0 100 200 300 400 500 110 120 130 o 140 150 di/dt [A/µs] Case Temperature, TC [ C] FFB20UP30DN Rev. A 3 www.fairchildsemi.com Package Demensions FFB20UP30DN Ultrafast Recovery Power Rectifier TO-263AB/D2-PAK Dimensions in Millimeters © Ultrafast Recovery Power Rectifier FFB20UP30DN Ultrafast Recovery Power Rectifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ Scalar Pump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I18 5 FFB20UP30DN Rev. A www.fairchildsemi.com