FFD04H60S

FFD04H60S Hyperfast II Rectifier February 2009 FFD04H60S Hyperfast II Rectifier Features • High Speed Switching, trr < 50ns • High Reverse Voltage and High Reliability • High Reverse Voltage, VF < 2.1V @ 4A • RoHS Compliant tm 4A, 600V Hyperfast II Rectifier The FFD04H60S is a hyperfast II rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications • General Purpose • Switching Mode Power Supply • Free-Wheeling Diode for Motor Application • Power Switching Circuits 3 3 1 1 2 2 DPAK DPAK (TO-252) (TO252) 1,3 Cathode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating and Storage Temperature Range @ TC = 130oC Ratings 600 600 600 4 40 -65 to +150 Units V V V A A o C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Ratings 4.0 Units o C/W Package Marking and Ordering Information Device Marking F04H60S Device FFD04H60S Package D-PAK Reel Size 13”Dia Tape Width - Quantity 2500 ©2008 Fairchild Semiconductor Corporation FFD04H60S Rev. A 1 www.fairchildsemi.com FFD04H60S Hyperfast II Rectifier Electrical Characteristics TC = 25oC unless otherwise noted Symbol VFM1 IRM1 trr Irr Qrr WAVL IF = 4 A IF = 4 A VR = 600V VR = 600V IF = 1A, di/dt = 100A/μs, VCC = 30V IF = 4A, di/dt = 100A/μs, VCC = 390V IF = 4A, di/dt = 100A/μs, VCC = 390V Avalanche Energy ( L = 40mH) Parameter T C = 2 5 oC TC = 125oC T C = 2 5 oC TC = 125oC T C = 2 5 oC T C = 2 5 oC T C = 2 5 oC Min. 4 Typ. 19 25 1.5 18 Max. 2.1 1.7 100 200 60 Units V μA ns A nC mJ Notes: 1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2% Test Circuit and Waveforms FFD04H60S Rev. A 2 www.fairchildsemi.com FFD04H60S Hyperfast II Rectifier Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop vs. Forward Current 20 10 Reverse Current , IR [μA] Forward Current, IF [A] TC = 100 C TC = 25 C o o Figure 2. Typical Reverse Current vs. Reverse Voltage 10 TC = 100 C o 1 o TC = 75 C 0.1 1 TC = 75 C o 0.01 TC = 25 C o 0.1 0.0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 3.0 0.001 0 100 200 300 400 Reverse Voltage, VR [V] 500 Figure 3.Typical Junction Capacitance 60 Figure 4. Typical Reverse Recovery Time vs. di/dt 40 Reverse Recovery Time, trr [ns] IF = 4A Typical Capacitance at 0V = 55 pF Capacitances , Cj [pF] 50 TC = 100 C o 30 40 TC = 75 C o 30 20 TC = 25 C o 20 10 0.1 1 10 Reverse Voltage, VR [V] 100 10 100 200 300 di/dt [A/μs] 400 500 Figure 5. Typical Reverse Recovery Current vs. di/dt 8 Reverse Recovery Current, Irr [A] Figure 6. Forward Current Derating Curve 18 Average Forward Current, IF(AV) [A] 15 12 9 6 3 0 25 6 TC = 100 C o 4 TC = 25 C o TC = 75 C o 2 IF = 4A 0 100 200 300 di/dt [A/μs] 400 500 50 75 100 125 o Case temperature, TC [ C] 150 FFD04H60S Rev. A 3 www.fairchildsemi.com FFD04H60S Hyperfast II Rectifier Mechanical Dimensions FFD04H60S Rev. A 4 www.fairchildsemi.com FFD04H60S Hyperfast II Rectifier TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ tm FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I37 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FFD04H60S Rev. A 5 www.fairchildsemi.com