FFP08S60SNTU

FFP08S60SN April 2008 FFP08S60SN Features • High Speed Switching, trr < 25ns @ IF = 8A • High Reverse Voltage and High Reliability • RoHS compliant STEALTHTM II Rectifier tm 8A, 600V STEALTHTM II Rectifier The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits TO-220-2L 1. Cathode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating and Storage Temperature Range @ TC = 89oC Ratings 600 600 600 8 60 -65 to +150 Units V V V A A o C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Ratings 3.6 Units o C/W Package Marking and Ordering Information Device Marking F08S60SN Device FFP08S60SNTU Package TO220-2L Reel Size - Tape Width - Quantity 50 ©2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. A 1 www.fairchildsemi.com FFP08S60SN Electrical Characteristics TC = 25oC unless otherwise noted Symbol VFM1 IRM1 trr trr Irr S factor Qrr trr Irr S factor Qrr WAVL IF = 8 A IF = 8 A VR = 600V VR = 600V IF = 1A, di/dt = 100A/µs, VR = 30V IF = 8A, di/dt = 200A/µs, VR = 390V Parameter TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 25 C o Min. 10 Typ. 2.7 2.1 13 15 2.5 0.4 19 32 3.8 0.7 62 - Max. 3.4 100 500 25 - Units V µA ns ns A nC ns A nC mJ IF = 8A, di/dt = 200A/µs, VR = 390V Avalanche Energy ( L = 40mH) TC = 125oC Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFP08S60SN Rev. A 2 www.fairchildsemi.com FFP08S60SN Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop vs. Forward Current 20 10 Reverse Current , IR [µA] Forward Current, IF [A] TC = 125 C TC = 75 C o o Figure 2. Typical Reverse Current vs. Reverse Voltage 40 10 TC = 125 C o 1 TC = 75 C o 1 TC = 25 C o 0.1 0.01 TC = 25 C o 0.1 0 1 2 3 4 Forward Voltage, VF [V] 5 0.001 10 100 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 3.Typical Junction Capacitance 50 Figure 4. Typical Reverse Recovery Time vs. di/dt 40 Reverse Recovery Time, trr [ns] IF = 8A Typical Capacitance at 0V = 43 pF 40 Capacitances , Cj [pF] 30 TC = 125 C o 30 20 TC = 75 C o 20 TC = 25 C o 10 0 0.1 1 10 Reverse Voltage, VR [V] 100 10 100 200 300 400 di/dt [A/µs] 500 600 Figure 5. Typical Reverse Recovery Current vs. di/dt 10 Reverse Recovery Current, Irr [A] Figure 6. Forward Current Derating Curve 15 Average Forward Current, IF(AV) [A] 8 10 6 TC = 125 C o 4 TC = 25 C o TC = 75 C o 5 2 0 100 IF = 8A 200 300 400 di/dt [A/µs] 500 600 0 25 50 75 100 125 o Case temperature, TC [ C] 150 FFP08S60SN Rev. A 3 www.fairchildsemi.com FFP08S60SN Mechanical Dimensions TO220 2L Dimensions in Millimeters FFP08S60SN Rev. A 4 www.fairchildsemi.com FFP08S60SN TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FFP08S60SN Rev. A 5 www.fairchildsemi.com