FFPF60B150DS

FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications • (Modulation + Damper) diode designed for horizontal deflection circuits in C-TVs & monitors 1 2 3 Damper Modulation DAMPER + MODULATION DIODE Absolute Maximum Ratings (Modulation) TC=25°C unless otherwise noted Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 600 20 120 - 65 to +150 Units V A A °C Absolute Maximum Ratings (Damper) TC=25°C unless otherwise noted Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 1500 6 60 - 65 to +150 Units V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Value 3.3 Units °C/W ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 FFPF60B150DS Electrical Characteristics*(Modulation) TC=25 °C unless otherwise noted Symbol VFM Parameter Maximum Instantaneous Forward Voltage IF = 20A IF = 20A IRM Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =20A, di/dt = 200A/µs) TC = 25 °C TC = 100 °C T C = 25 ° C TC = 100 °C Min. Typ. Max. Units V 2.2 2.0 µA 10 100 90 8 360 ns A nC trr Irr Qrr * Pulse Test: Pulse Width=300µs, Duty Cycle=2% Electrical Characteristics*(Damper) TC=25 °C unless otherwise noted Symbol VFM Parameter Maximum Instantaneous Forward Voltage IF = 6A IF = 6A IRM Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time (IF =1.0A, di/dt = 50A/µs) Maximum Forward Recovery Time (IF =6.5A, di/dt = 50A/µs) Maximum Forward Recovery Voltage TC = 25 °C TC = 100 °C T C = 25 ° C TC = 100 °C Min Typ Max Units V 1.6 1.4 µA 7 60 170 350 17 ns ns V trr tfr VFRM * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 FFPF60B150DS Typical Characteristics 40 50 Forward Current , IF [A] [A] Forward Current , I 10 TC = 100 C o 10 F TJ = 125 C o TC = 25 C 1 o 1 TJ = 25 C o 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 0.0 0.4 0.8 1.2 1.6 2.0 Forward Voltage , VF [V] Forward Voltage , VF [V] Figure 1. Typical Forward Characteristics (Modulation Diode) 1000 Figure 2. Typical Forward Characteristics (Damper Diode) 100 [uA] TC = 100 C 10 o [µA] 100 10 R Reverse Current , I TJ = 125 C 1 1 TC = 25 C 0.1 o Reverse Current , I R o 0.1 TJ = 100 C o o 0.01 0.01 TJ = 25 C 0.001 100 200 300 400 500 600 0.001 0 300 600 900 1200 1500 Reverse Voltage , VR [V] Reverse Voltage , VR [V] Figure 3. Typical Reverse Current vs. Reverse Voltage (Modulation Diode) 200 120 Figure 4. Typical Reverse Current vs. Reverse Voltage (Damper Diode) Typical Capacitance at 0V = 178 pF 100 Typical Capacitance at 0V = 100 pF Capacitance , Cj [pF] Capacitance , Cj [pF] 1 10 100 150 80 100 60 40 50 20 1 0.1 0 0.1 1 10 100 Reverse Voltage , VR [V] Reverse Voltage , VR [V] Figure 5. Typical Junction Capacitance (Modulation Diode) ©2001 Fairchild Semiconductor Corporation Figure 6. Typical Junction Capacitance (Damper Diode) Rev. A, March 2001 FFPF60B150DS Typical Characteristics 100 400 Reverse Recovery Time , t rr [ns] [ns] 90 IF = 20A o TC = 25 C di/dt = 50A/µs 300 80 Reverse Recovery Time , t rr 70 200 60 di/dt = 100A/µs 100 50 40 100 0 500 1 2 3 4 5 6 7 8 9 10 di/dt [A/us] Forward Current , IF [A] Figure 7. Typical Reverse Recovery Time vs. di/dt (Modulation Diode) 16 Figure 8. Typical Reverse Recovery Time vs. di/dt (Damper Diode) 10 9 8 7 6 Reverse Recovery Current , Irr [A] 14 12 10 8 6 4 2 0 100 IF = 20A o TC = 25 C Average Forward Current , I F(AV) [A] DC 5 4 3 2 1 0 80 100 120 o 500 140 160 di/dt [A/us] Case Temperature , TC [ C] Figure 9. Typical Reverse Recovery Current vs. di/dt (Modulation Diode) 30 Figure 10. Forward Current Derating Curve (Damper Diode) F(AV) [A] Average Forward Current , I 25 20 DC 15 10 5 0 60 80 100 120 o 140 160 Case Temperature , TC [ C] Figure 11. Forward Current Derating Curve (Modulation Diode) ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 FFPF60B150DS Package Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters Rev. A, March 2001 ©2001 Fairchild Semiconductor Corporation 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ DISCLAIMER FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H1