FFPF60SA60DS

FFPF60SA60DS StealthTM Rectifier FFPF60SA60DS Features • • • • • Soft Recovery (tb / ta > 1.2) Fast Recovery (trr < 25ns) Reverse Voltage, 600V Forward Voltage (@ TC = 125°C), < 2.0 V Enhanced Avalanche Energy TO-220F-3L Applications • • • • • • Switch Mode Power Supplies Hard Swithed PFC Boost Diode UPS Free wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode 12 3 1 2 3 Absolute Maximum Ratings (per leg) Symbol VRRM VRWM VR IF(AV) IFSM PD WAVL TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TC=25°C unless otherwise noted Value 600 600 600 @ TC = 95 °C 8 80 26 20 - 65 to +150 Units V V V A A W mJ °C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Power Dissipation Avalanche Energy (1A, 40mH) Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC RθJA Parameter Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient Value 3.125 62.5 Units °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 FFPF60SA60DS Electrical Characteristics (per leg) Symbol VFM * TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 125 °C T C = 25 ° C TC = 125 °C Typ. 2.0 1.6 39 2 39 Max. 2.4 2.0 µA 100 1000 25 30 ns ns ns A nC Units V Parameter Maximum Instantaneous Forward Voltage IF = 8A IF = 8A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time (IF =1A, di/dt = 100A/µs, VR = 30V) Maximum Reverse Recovery Time (IF =8A, di/dt = 100A/µs, VR = 30V) Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge (IF =8A, di/dt = 200A/µs, VR = 390V) IRM * trr trr trr Irr Qrr * Pulse Test: Pulse Width=300µs, Duty Cycle=2% Typical Characteristics 10 Forward Current , IF [A] TC = 25 C TC = 125 C TC = 100 C 1 o o o Reverse Current , I R [µA] TC = 150 C o 100 TC = 150 C TC = 125 C o o 10 TC = 100 C o 1 0.1 TC = 25 C o 0.1 0.5 1.0 1.5 2.0 2.5 0.001 0 50 100 150 200 250 300 350 400 450 500 550 600 Forward Voltage , VF [V] Reverse Voltage , VR [V] Figure 1. Typical Forward Voltage Drop vs. Forward Current Figure 2. Typical Reverse Current vs. Reverse Voltage 200 44 Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 169.3 pF 42 40 38 36 34 32 30 28 26 100 200 300 IF = 8A Tc = 25 C o Capacitance , Cj [pF] 150 100 50 0.1 1 10 100 400 500 600 Reverse Voltage , VR [V] di/dt [A/µs] Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time vs. di/dt ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 FFPF60SA60DS Typical Characteristics 6 (Continued) Reverse Recovery Current , Irr [A] IF = 8 A 5 T C = 25 C o 4 Average Forward Current , IF(AV) [A] 10 D C 3 5 2 1 0 100 200 300 400 500 600 0 60 80 100 120 o 140 160 di/dt [A/µs] Case Temperature , TC [ C] Figure 5. Typical Reverse Recovery Current vs. di/dt Figure 6. Forward Curent Derating Curve Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG VGE t1 t2 CURRENT SENSE + MOSFET VDD dIF dt ta trr tb 0 0.25 IRM IRM Figure 7. trr Test Circuit Figure 8. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 R + VDD DUT t0 t1 t2 t IL IV IL VAVL Figure 9. Avalanche Energy Test Circuit Figure 10. Avalanche Current and Voltage Waveforms ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 FFPF60SA60DS Package Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I13