FGA15N120AND

FGA15N120AND IGBT FGA15N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features • • • • High speed switching Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A High input impedance CO-PAK, IGBT with FRD : trr = 210ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G TO-3P GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C FGA15N120AND 1200 ± 20 24 15 45 15 45 200 80 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.63 2.88 40 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation FGA15N120AND Rev. A FGA15N120AND Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 ± 100 V V/°C mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125°C IC = 24A, VGE = 15V 3.5 ---5.5 2.4 2.9 3.0 7.5 3.2 --V V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1150 120 56 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------90 70 310 60 3.27 0.6 3.68 80 60 310 50 3.41 0.84 4.25 120 9 63 14 ---120 4.9 0.9 5.8 -------180 14 95 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH VCC = 600 V, IC = 15A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600 V, IC = 15A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600 V, IC = 15A, VGE = 15V Measured 5mm from PKG = 25°C unless otherwise noted Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C Test Conditions T C = 2 5° C IF = 15A TC = 125°C T C = 2 5° C TC = 125°C IF = 15A dI/dt = 200 A/µs T C = 2 5° C TC = 125°C T C = 2 5° C TC = 125°C Min. --------- Typ. 1.7 1.8 210 280 27 31 2835 4340 Max. 2.7 -330 -40 -6600 -- Units V ns A nC ©2003 Fairchild Semiconductor Corporation FGA15N120AND Rev. A FGA15N120AND 120 T C = 2 5℃ 80 20V 17V 15V 12V Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃ 100 Collector Current, IC [A] 80 60 VGE = 10V 40 Collector Current, IC [A] 10 60 40 20 20 0 0 2 4 6 8 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 Common Emitter VGE = 15V 30 Vcc = 600V load Current : peak of square wave 24A Collector-Emitter Voltage, VCE [V] 3.5 3.0 IC = 15A Load Current [A] 20 10 2.5 2.0 25 50 75 100 125 Duty cycle : 50% Tc = 100℃ Powe Dissipation = 40W 0 0.1 1 10 100 1000 Case Temperature, T C [℃] Frequency [kHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 2 5℃ 20 Common Emitter T C = 125℃ Collector-Emitter Voltage, VCE [V] 16 Collector-Emitter Voltage, VCE [V] 16 12 12 8 8 4 IC = 7.5A 0 0 4 8 24A 15A 24A 4 15A IC = 7.5A 0 0 4 8 12 16 20 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2003 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FGA15N120AND Rev. A FGA15N120AND 2500 Common Emitter VGE = 0V, f = 1MHz T C = 2 5℃ Ciss 1500 2000 100 td(on) Switching Time [ns] Capacitance [pF] tr 1000 Coss 500 Crss Common Emitter VCC = 600V, VGE = ± 15V IC = 15A T C = 2 5℃ TC = 125℃ 10 0 10 20 30 40 50 60 70 0 1 10 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Loss [mJ] Switching Time [ns] Common Emitter VCC = 600V, VGE = ± 15V IC = 15A TC = 25℃ TC = 125℃ 10 td(off) Common Emitter VCC = 600V, VGE = ± 15V IC = 15A T C = 2 5℃ T C = 125℃ Eon 100 tf 1 Eoff 10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VGE = ± 15V, RG = 20Ω T C = 2 5℃ TC = 125℃ Common Emitter VGE = ± 15V, RG = 20Ω T C = 25℃ T C = 125℃ td(off) Switching Time [ns] 100 td(on) Switching Time [ns] 100 tf tr 5 10 15 20 25 30 5 10 15 20 25 30 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2003 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FGA15N120AND Rev. A FGA15N120AND 16 Common Emitter VGE = ± 15V, RG = 20Ω TC = 25℃ TC = 125℃ 14 Eon Common Emitter RL = 40Ω TC = 25℃ 600V 400V 8 6 4 2 0 5 10 15 20 25 30 0 20 40 60 80 100 120 Vcc = 200V Gate-Emitter Voltage, VGE [V] 10 12 10 Switching Loss [mJ] 1 Eoff 0.1 Collector Current, IC [A] Gate Charge, Qg [nC] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 100 Ic MAX (Pulsed) Ic MAX (Continuous) 50µ s Collector Current, Ic [A] 10 1ms DC Operation 1 Collector Current, IC [A] 100µ s 10 Single Nonrepetitive 0.1 Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 o 0.01 1 1 10 Safe Operating Area VGE = 15V, T C = 125℃ 100 1000 Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA 10 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2003 Fairchild Semiconductor Corporation FGA15N120AND Rev. A FGA15N120AND 50 30 di/dt = 200A/µs Forward Current , IF [A] 10 Reverse Recovery Currnet , Irr [A] 25 20 TJ = 125 C TJ = 25 C o o 15 di/dt = 100A/µs 1 10 5 TC = 125℃ TC = 25℃ 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 5 10 15 20 25 Forward Voltage , V F [V] Forward Current , I F [A] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 7000 400 Stored Recovery Charge , Qrr [nC] Reverse Recovery Time , rr [ns] t 6000 di/dt = 200A/µs 5000 4000 3000 2000 1000 0 5 10 15 20 25 300 d i/dt = 100A/µ s di/dt = 100A/µs 200 di/dt = 200A/µ s 100 0 5 10 15 20 25 Forward Current , IF [A] Forward Current , I F [ A] Fig 20. Stored Charge Fig 21. Reverse Recovery Time ©2003 Fairchild Semiconductor Corporation FGA15N120AND Rev. A FGA15N120AND Package Dimension TO-3P (FS PKG CODE ) 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation FGA15N120AND Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2003 Fairchild Semiconductor Corporation Rev. I5