FGA15N120ANTD_1

FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C • Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A and TC = 25°C • Extremely enhanced avalanche capability tm Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. C G GCE TO-3P E Absolute Maximum Ratings Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current (Note 1) Description Collector-Emitter Voltage @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA15N120ANTD 1200 ± 20 30 15 45 15 45 186 74 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJC RθJA Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 0.67 2.88 40 Units °C/W °C/W °C/W Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature ©2006 Fairchild Semiconductor Corporation FGA15N120ANTD Rev. A1 1 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT Package Marking and Ordering Information Device Marking FGA15N120ANTD Device FGA15N120ANTD Package TO-3P Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 3 ± 250 mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125°C IC = 30A, Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2650 143 96 ---pF pF pF VGE = 15V 4.5 ---6.5 1.9 2.2 2.3 8.5 2.4 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 600 V, IC = 15A, VGE = 15V VCC = 600 V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 600 V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C -----------------15 20 160 100 3 0.6 3.6 15 20 170 150 3.2 0.8 4.0 120 16 50 ---180 4.5 0.9 5.4 ----4.8 1.2 6.0 180 22 65 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGA15N120ANTD Rev. A1 2 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr C = 25°C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 15A Test Conditions TC = 25°C TC = 125°C IF = 15A dI/dt = 200 A/μs TC = 25°C TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C Min. --------- Typ. 1.7 1.8 210 280 27 31 2835 4340 Max. 2.7 -330 -40 -6600 -- Units V ns A nC FGA15N120ANTD Rev. A1 3 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 T C = 25 C o Figure 2. Typical Saturation Voltage Characteristics 150 Common Emitter VGE = 15V o 20V 17V 15V Collector Current, IC [A] 12V Collector Current , IC [A] 150 120 TC = 25 C TC = 125 C o 100 V GE = 10V 90 60 50 30 0 0 2 4 6 8 10 0 0 2 4 6 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V GE = 15V IC = 24A 2.5 Figure 4. Saturation Voltage vs. VGE Common Emitter o T C = 25 C 16 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 12 IC = 15A 8 2.0 4 24A I C = 7 .5A 0 4 8 15A 1.5 25 50 75 100 o 0 125 150 12 16 20 Case Temperature, TC [ C] Gate-Emitter Voltage, V GE [V] Figure 5. Saturation Voltage vs. VGE 16 Common Emitter o TC = 125 C Figure 6. Capacitance Characteristics 3500 3000 2500 Ciss Collector-Emitter Voltage, VCE [V] Capacitance [pF] 12 2000 1500 1000 500 0 Coss Common Emitter VGE = 0V, f = 1MHz T C = 25 C o 8 4 24A 15A Crss 0 0 4 IC = 7.5A 8 12 16 20 0.1 1 10 Gate-Emitter Voltage, V GE [V] Collector-Emitter Voltage, VCE[V] FGA15N120ANTD Rev. A1 4 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT Typical Performance Characteristics Figure 7. Turn-On Characteristics vs. Gate Resistance 100 (Continued) Figure 8. Turn-Off Characteristics vs. Gate Resistance 1000 Common Emitter V CC = 6 00V, V GE = 1 5V IC = 1 5A T C = 25 C o td(off) tr Switching Time [ns] 10 td(on) Switching Time [ns] T C = 1 25 C o 100 tf Common Emitter V CC = 600V, V GE = 15V IC = 15A T C = 25 C 1 0 10 20 30 40 T C = 125 C 50 60 70 o o 10 0 10 20 30 40 50 60 70 Gate Resistance, RG[Ω ] Gate Resistance, R G [Ω ] Figure 9. Switching Loss vs. Gate Resistance Figure 10. Turn-On Characteristics vs. Collector Current Common Emitter V GE = 1 5V, R G = 1 0 Ω 100 T C = 25 C T C = 1 25 C tr o o Common Emitter V CC = 6 00V, V GE = 1 5V IC = 1 5A 10 T C = 25 C T C = 1 25 C E on o Switching Loss [mJ] Switching Time [ns] o td(on) 10 Eoff 1 0 10 20 30 40 50 60 70 10 15 20 25 30 Gate Resistance, R G [Ω ] Collector Current, IC [A] Figure 11. Turn-Off Characteristics vs. Collector Current Common Emitter V GE = 1 5V, R G = 10 Ω T C = 25 C T C = 1 25 C o o Figure 12. Switching Loss vs. Collector Current Common Emitter VGE = 15V, RG = 10Ω 10 T C = 25 C T C = 125 C o o td(off) Eon 100 Switching Loss [mJ] Switching Time [ns] Eoff 1 tf 10 10 15 20 25 30 0.1 5 10 15 20 25 30 Collector Current, IC [A] Collector Current, IC [A] FGA15N120ANTD Rev. A1 5 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT Typical Performance Characteristics Figure 13. Gate Charge Characteristics 15 Common Emitter RL = 4 0 Ω T C = 25 C 600V 9 400V o (Continued) Figure 14. SOA Characteristics 10 0 Gate-Emitter Voltage, VGE [V] 12 Ic M A X (P u lse d) 50μs Ic M A X (C o n tinu o us ) 1 00 μ s 1m s Collector Current, Ic [A] 10 D C O p e ra tio n 1 6 Vcc = 200V 3 0.1 0 0 20 40 60 80 100 120 0 .0 1 0.1 S in g le N on re p etitive o P u lse T c = 25 C C urves m u st b e de rate d lin ea rly w ith incre ase in te m pe ratu re 1 10 10 0 10 00 Gate Charge, Qg [nC] C o lle c to r - E m itte r V o lta g e , V C E [ V ] Figure 15. Turn-Off SOA 100 Collector Current, IC [A] 10 1 10 Safe Operating Area o V GE = 15V, T C = 125 C 100 1000 Collector-Emitter Voltage, VCE [V] Figure 16. Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 10 Rectangular Pulse Duration [sec] FGA15N120ANTD Rev. A1 6 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT Typical Performance Characteristics Figure 17. Forward Characteristics 50 (Continued) Figure 18. Reverse Recovery Current 30 di/dt = 200A/μs Forward Current , IF [A] 10 Reverse Recovery Currnet , Irr [A] 25 20 TJ = 125 C T J = 25 C o o 15 di/dt = 100A/μs 1 10 TC = 125 C TC = 25 C 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 o o 5 0 5 10 15 20 25 Forward Voltage , VF [V] Forward Current , IF [A] Figure 19. Stored Charge 7000 Figure 20. Reverse Recovery Time 400 Stored Recovery Charge , Qrr [nC] Reverse Recovery Time , trr [ns] 6000 5000 4000 3000 2000 1000 0 5 10 15 20 25 di/dt = 200A/μs 300 di/dt = 100A/μs di/dt = 100A/μs 200 di/dt = 200A/μs 100 0 5 10 15 20 25 Forward Current , IF [A] Forward Current , IF [A] FGA15N120ANTD Rev. A1 7 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT Mechanical Dimensions TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters FGA15N120ANTD Rev. A1 8 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT Mechanical Dimensions (continued) TO-3PN Dimensions in Millimeters FGA15N120ANTD Rev. A1 9 www.fairchildsemi.com FGA15N120ANTD 1200V NPT Trench IGBT TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device (a) are intended for surgical implant into the body, or (b) support or system whose failure to perform can be reasonably expected or sustain life, or (c) whose failure to perform when properly used to cause the failure of the life support device or system, or to in accordance with instructions for use provided in the labeling, affect its safety or effectiveness. can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 FGA15N120ANTD Rev. A1 www.fairchildsemi.com